CBR2-L080M (Central Semiconductor)
SILICON BRIDGE RECTIFIERS

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CBR2-L010M SERIES
SILICON BRIDGE RECTIFIERS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR2-L010M series
types are silicon single phase, full wave bridge rectifiers
designed for general purpose applications.
MARKING: FULL PART NUMBER
CASE B-M
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
CBR2
SYMBOL -L010M -L020M -L040M -L060M -L080M -L100M UNITS
Peak Repetitive Reverse Voltage
VRRM 100 200 400 600 800 1000 V
DC Blocking Voltage
VR 100 200 400 600 800 1000 V
RMS Reverse Voltage
VR(RMS) 70
140 280 420
560 700
V
Average Forward Current (TA=55°C)
IO
2.0 A
Peak Forward Surge Current
IFSM
60
A
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
IR VR=Rated VRRM
10
IR VR=Rated VRRM, TA=125°C
500
VF IF=2.0A
1.1
UNITS
μA
μA
V
R2 (2-August 2013)


CBR2-L080M (Central Semiconductor)
SILICON BRIDGE RECTIFIERS

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CBR2-L010M SERIES
SILICON BRIDGE RECTIFIERS
CASE B-M - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R2 (2-August 2013)


CBR2-L080M (Central Semiconductor)
SILICON BRIDGE RECTIFIERS

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CBR2-L010M SERIES
SILICON BRIDGE RECTIFIERS
TYPICAL ELECTRICAL CHARACTERISTICS
w w w. c e n t r a l s e m i . c o m
R2 (2-August 2013)




CBR2-L080M.pdf
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