VS-ST700C16L0 (Vishay)
Phase Control Thyristors

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VS-ST700CL Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 910 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-200AC (B-PUK)
PRODUCT SUMMARY
Package
TO-200AC (B-PUK)
Diode variation
Single SCR
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
910 A
1200 V, 1600 V, 1800 V, 2000 V
1.80 V
100 mA
-40 °C to 125 °C
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
Ths
Ths
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
910
55
1857
25
15 700
16 400
1232
1125
1200 to 2000
150
-40 to 125
UNITS
A
°C
A
°C
A
kA2s
V
μs
°C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VS-ST700CL
12
16
18
20
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
1200
1600
1800
2000
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
1300
1700
1900
2100
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
80
Revision: 15-Apr-14
1 Document Number: 94413
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-ST700C16L0 (Vishay)
Phase Control Thyristors

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VS-ST700CL Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES
910 (355)
55 (85)
1857
15 700
16 400
13 200
13 800
1232
1125
871
795
12 321
1.00
1.13
0.40
0.35
1.80
600
1000
UNITS
A
°C
A
kA2s
kA2s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
VALUES
1000
1.0
150
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES UNITS
500 V/μs
50 mA
Revision: 15-Apr-14
2 Document Number: 94413
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-ST700C16L0 (Vishay)
Phase Control Thyristors

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TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-ST700CL Series
Vishay Semiconductors
SYMBOL
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, tp 5 ms
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Maximum required gate
trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
VALUES
UNITS
Typ. Max.
10.0
W
2.0
3.0 A
20
V
5.0
200 -
100 200 mA
50 -
2.5 -
1.8 3.0
V
1.1 -
IGD
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
VGD
unit with rated VDRM anode to
cathode applied
10
0.25
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
TJ
Maximum storage temperature range
TStg
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
-40 to 150
°C
0.073
0.031
0.011
K/W
0.006
14 700
(1500)
N
(kg)
255 g
TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
TJ = TJ maximum
K/W
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
3 Document Number: 94413
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-ST700C16L0 (Vishay)
Phase Control Thyristors

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VS-ST700CL Series
Vishay Semiconductors
130
ST700C..L Series
120 (Single Side Cooled)
110 RthJ-hs(DC) = 0.073 K/ W
100
90
Conduction Angle
80
70 30° 60°
60 90°
120°
50 180°
40
0 100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
ST700C..L Series
(Single Side Cooled )
RthJ-hs(DC) = 0.073 K/ W
Conduction Period
30° 60°
90°
120°
180°
DC
200 400 600 800 1000
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
ST700C..L Series
(Double Side Cooled)
RthJ-hs(DC) = 0.031 K/ W
Conduction Period
30°
60°
90°
120°
180°
DC
400 800 1200 1600
Average On-state Current (A)
2000
Fig. 3 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
ST700C..L Series
(Double Side Cooled)
RthJ-hs(DC) = 0.031 K/ W
Conduction Period
30°
60°
90°
120°
180°
DC
400 800 1200 1600
Average On-state Current (A)
2000
Fig. 4 - Current Ratings Characteristics
2800
2400
2000
1600
180°
120°
90°
60°
30°
RMSLimit
1200
800
400
0
0
Conduction Angle
ST700C..L Series
TJ = 125°C
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 5 - On-State Power Loss Characteristics
3500
DC
3000 180°
120°
90°
2500 60°
30°
2000
RMSLimit
1500
1000
Conduction Period
ST700C..L Series
500 TJ = 125°C
0
0 400 800 1200 1600 2000
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 15-Apr-14
4 Document Number: 94413
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-ST700C16L0 (Vishay)
Phase Control Thyristors

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VS-ST700CL Series
Vishay Semiconductors
14000
13000
12000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
11000
10000
9000
8000
7000 ST700C..L Series
6000
1
10 100
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
TJ = 25°C
1000
16000
Maximum Non Repetitive Surge Current
15000
VersusPulse Train Duration. Control
Of Conduc tion May Not Be Maintained.
14000
Initial TJ= 125°C
13000
No Voltage Reapplied
12000
Rated VRRMReapplied
11000
10000
9000
8000
7000 ST700C..L Series
6000
0.01
0.1
Pulse Train Duration (s)
1
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
TJ= 125°C
ST700C..L Series
100
0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
ST700C..L Series
0.01
0.001
0.001
Steady Sta te Value
RthJ-hs = 0.073 K/ W
(Single Side Cooled)
RthJ-hs = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
0.01
0.1
Square Wave Pulse Duration (s)
1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
10
Revision: 15-Apr-14
5 Document Number: 94413
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-ST700C16L0 (Vishay)
Phase Control Thyristors

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VS-ST700CL Series
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/ dt : 10V, 10ohms
10 tr<=1 µs
(b )
(a )
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST700C..L Series Frequenc y Limited by PG(AV)
0.1 1
InstantaneousGate Current (A)
10
100
ORDERING INFORMATION TABLE
Fig. 11 - Gate Characteristics
Device code VS- ST 70 0 C 20 L 1 -
1 2 3 456789
1 - Vishay Semiconductors product
2 - Thyristor
3 - Essential part number
4 - 0 = Converter grade
5 - C = Ceramic PUK
6 - Voltage code x 100 = VRRM (see Voltage Ratings table)
7 - L = PUK case TO-200AC (B-PUK)
8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
9 - Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95076
Revision: 15-Apr-14
6 Document Number: 94413
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-ST700C16L0 (Vishay)
Phase Control Thyristors

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TO-200AC (B-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
0.7 (0.03) MIN.
34 (1.34) DIA. MAX.
2 places
27 (1.06) MAX.
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
Pin receptacle
AMP. 60598-1
6.2 (0.24) MIN.
4.7 (0.18)
20° ± 5°
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
36.5 (1.44)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1


VS-ST700C16L0 (Vishay)
Phase Control Thyristors

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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1 Document Number: 91000




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