RTH23007-10 (RFHIC)
GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier RTH23007-10
Product Features
• GaN on SiC Chip on Board
• Surface Mount Hybrid Type
• Asymmetric Doherty Amplifier
• High Efficiency
• No Matching circuit needed
Applications
• RF Sub-Systems
• Base Station
• RRH
• 4G/ LTE system
• Small cell
Package Type : NP-8CL
Description
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high
power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and
powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series
is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal
dissipation.
Electrical Specifications @ Vds =31V, Ta=25
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
2300
-
2400
Power Gain
12 14
-
Gain Flatness
dB -3.0
-
3.0
Input Return Loss
- -9 -6
Pout @ Average dBm - 38.5 -
Pout @ Psat
dBm 46
47
-
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-27 -24
-53 -
Drain Efficiency % 40
45
-
Carrier Idq
- 120 -
mA
Total Ids
- 500 -
- -3.5 -2.0
Supply Voltage V -
-5.0 -4.0
30.5 31 31.5
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate voltage supply and last turn on the Drain voltage supplies
Turn off : Turn off the Drain voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=38.5dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. RTH Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Carrier Idq = 150mA
Vgp = -4.8V
Pulse Width=20us, Duty10%
Non DPD
With DPD
Vgc
Vgp
Vds
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
TYP
5
28 x 19 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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RTH23007-10 (RFHIC)
GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier
Absolute Maximum Ratings
PARAMETER
Gate-Source Voltage
Drain-Source Voltage
Gate Current
Operating Junction Temperature
Operating Case Temperature
Storage Temperature
UNIT
V
V
mA
°C
°C
°C
RTH23007-10
RATING
-10 ~ 0
50
4.0
225
-30 ~ 85
-40 ~ 100
SYMBOL
Vgc
Vgp
Vds
Igs
TJ
TC
TSTG
Operating Voltage & Input Level
PARAMETER
UNIT
MIN
TYP
Drain Voltage
V 30.5
31
Gate Voltage (on-stage)
V
- Vgc @Carrier Idq
Gate Voltage (on-stage)
V
-
Vgp
Gate Voltage (off-stage)
V
-
-8
Gate Voltage (off-stage)
V
-
-8
RF Input Level
dB -
-
*Vgp(Peaking gate voltage) set: Lower Vgp of Δ-1.9V at Peaking Idq 10mA
MAX
31.5
-2
-2
-
-
35
SYMBOL
Vds
Vgc
Vgp
Vgc
Vgp
Pin
Block Diagram
*Note
Directional coupler, isolator and drive amplifier MUST be located CLOSE to the DUT(device under test) is needed for best performance.
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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RTH23007-10 (RFHIC)
GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier
Application Circuit
RTH23007-10
Part List
Location
C3, C4
C1, C2
Evaluation Board
Model No.
1812C225K101CT
C3216X7R1C106K
RO4350B
Spec.
2.2uF / 100V
10uF / 16V
2Layer, 30mil
Maker
WALSIN
TDK
ROGERS
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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RTH23007-10 (RFHIC)
GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier RTH23007-10
Performance Charts
* Bias condition @ Carrier Idq= 150mA, Vgp= 4.8V, Ta=25
Power Gain vs. Frequency
16
15
14
13
12 Power Gain
@Pout=38.5dBm
11
2.30 2.31 2.32 2.33 2.34 2.35 2.36 2.37 2.38
Frequency[GHz]
Psat vs. Frequency
48
47
46
45
44 Psat @Pulse Width
20us (Duty 10%)
43
2.30 2.31 2.32 2.33 2.34 2.35 2.36 2.37 2.38
Frequency[GHz]
ACLR vs. Frequency
-25
-27
-29
-31
-33 ACLR @LTE
10MHz(w/o DPD)
-35
2.30 2.31 2.32 2.33 2.34 2.35 2.36 2.37 2.38
Frequency[GHz]
Drain Efficiency vs. Frequency
50
48
46
44
42
Efficiency
40
2.30 2.31 2.32 2.33 2.34 2.35 2.36 2.37 2.38
Frequency[GHz]
ACLR with Digital Predistortion
10
0
-10
-20
-30
-40
-50
-60
-70
2325
2333
2342
2350
2358
Frequency[MHz]
w/o DPD
w DPD
2367 2375
*DPD Engine: Optichron OP6180
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
Ids vs. Frequency
550
530
510
490
470 Ids
@Pout=38.5dBm
450
2.30 2.31 2.32 2.33 2.34 2.35 2.36 2.37 2.38
Frequency[GHz]
All specifications may change without notice
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GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier
Package Dimensions (Type: NP-8CL)
* Unit: mm[inch] | Tolerance: ±0.15[.008]
RTH23007-10
Top View
Side View
Bottom View
Pin Description
Pin No Function Pin No Function Pin No Function Pin No Function
1 GND 4
Vgp
7
GND
10
Vds
2 RF Input 5
GND
8 RF Output 11
GND
3 GND 6
Vds
9
GND
12
Vgc
Recommended Pattern
Recommended Mounting Configuration
* Mounting Configuration Notes
1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat.
2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws
be added near the heatsink to mount the board
3. In designing the necessary RF trace, width will depend upon the PCB material and construction.
4. Use 1 oz. Copper minimum thickness for the heatsink.
5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink
6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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RTH23007-10 (RFHIC)
GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier RTH23007-10
Precautions
This product is a Gallium Nitride Transistor.
The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are
applied in accordance to the Sequence during Turn-On and Turn-Off.
The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and
negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier.
The required sequence for power supply is as follows.
During Turn-On
1. Connect GND
2. Apply Gate Voltage (Vgc and Vgp)
3. Apply Drain Voltage (Vds)
4. Apply the RF Power
During Turn-Off
1. Turn off RF power
2. Turn off Drain Voltage (Vds), and then, turn off the Gate Voltage (Vgc and Vgp)
3. Remove all connections
Turn On
Turn Off
- Sequence Timing Diagram -
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US Facility : 919-677-8780 / sales@rfhicusa.com
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RTH23007-10 (RFHIC)
GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier RTH23007-10
Reflow Profile
* Reflow oven settings
Zone
A
Temperature(°C) 30 ~ 150
Belt speed
55 ~ 115 sec
Reflow Cycle Limit= 1time
B
150 ~ 180
55 ~ 75 sec
C
180 ~ 220
30 ~ 50 sec
D
220 ~ 220
30 ~ 50 sec
EF
235 ~ 240 2 ~ 6 / Sec Drop
5 ~ 10 sec
60 ~ 90 sec
* Measured reflow profile
Ordering Information
Part Number
RTH23007-10
Package Design
-R (Reel)
-B (Bulk)
-EVB (Evaluation Board)
Revision History
Part Number
RTH23007-10
Release Date
2013.11.15
RTH23007-10
2013.06.04
RTH23007-10
2013.02.25
Version
1.1
1.0
0.5
Modification
Electrical specification (1p)
Electrical specification
Operating Voltage & Input Level
Frequency Range
Package Dimension
Data Sheet Status
-
-
Preliminary
RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly
examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume
any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages.
RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or
sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees,
representatives and distributors harmless against any and all claims arising out of such unauthorized use.
Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919-
677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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