JCS630A (JILIN SINO-MICROELECTRONICS)
N-CHANNEL MOSFET

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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS630A
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.0 A
VDSS 200 V
Rdson(Vgs=10V) 0.4 Ω
Qg 22 nC
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
zCrss (典型值 22pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 22pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
印记
Order codes
Marking
JCS630VA-O-V-N-B JCS630VA
JCS630RA-O-R-N-B JCS630RA
JCS630RA-O-R-N-A JCS630RA
JCS630SA-O-S-N-B JCS630SA
JCS630BA-O-B-N-B JCS630BA
JCS630CA-O-C-N-B JCS630CA
JCS630FA-O-F-N-B JCS630FA
封装
Package
IPAK
DPAK
DPAK
TO-263
TO-262
TO-220C
TO-220MF
无卤素
Halogen Free
NO
NO
NO
NO
NO
NO
NO
包装
Packaging
条管 Tube
条管 Tube
编带 Brede
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device Weight
0.35 g(typ)
0.30 g(typ)
0.30 g(typ)
1.37 g(typ)
1.71 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201110B
1/16


JCS630A (JILIN SINO-MICROELECTRONICS)
N-CHANNEL MOSFET

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绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
JCS630A
项目
Parameter
符号
Symbol
JCS630VA/RA
数值
Value
JCS630SA/BA/CA
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
200
连续漏极电流
Drain Current
-continuous
ID
T=25
T=100
9.0
5.7
最大脉冲漏极电流(注 1
Drain Current - pulse
note 1
IDM
36
最高栅源电压
Gate-Source Voltage
VGSS
±30
单脉冲雪崩能量(注 2
Single Pulsed Avalanche
Energynote 2
EAS
160
雪崩电流(注 1
Avalanche Current note 1
IAR
9.0
重复雪崩能量(注 1
Repetitive Avalanche
Currentnote 1
EAR
7.2
二极管反向恢复最大电压变
化速率(注 3
Peak Diode Recovery dv/dt
dv/dt
5.5
note 3
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
48
0.39
72
0.57
25
最高结温及存储温度
Operating and Storage
Temperature Range
TJTSTG
-55+150
引线最高焊接温度
Maximum Lead
Temperature for Soldering
TL
300
Purposes
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
JCS630FA
9.0*
5.7*
36*
38
0.3
单位
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
版本:201110B
2/16


JCS630A (JILIN SINO-MICROELECTRONICS)
N-CHANNEL MOSFET

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电特性 ELECTRICAL CHARACTERISTICS
JCS630A
项目
符号
测试条件
最大 典型 最 大单 位
Parameter
Symbol Tests conditions Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS ID=250μA, VGS=0V
200 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA, referenced to
TJ 25
- 0.2 - V/
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=200V,VGS=0V,
TC=25
VDS=160V, TC=125
VDS=0V, VGS =30V
- - 10 μA
- - 100 μA
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON) VGS =10V , ID=4.5A
- 0.34 0.4
正向跨导
Forward Transconductance
gfs
VDS = 40V, ID=4.5Anote
4
- 7.05 -
S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
VDS=25V,
VGS =0V,
f=1.0MHZ
- 550 720 pF
- 85 110 pF
反向传输电容
Reverse transfer capacitance
Crss
- 22 29 pF
版本:201110B
3/16


JCS630A (JILIN SINO-MICROELECTRONICS)
N-CHANNEL MOSFET

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电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=100V,ID=9.0A,RG=25
note 45
延迟时间 Turn-Off delay time
td(off)
下降时间 Turn-Off Fall time
tf
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Qg
Qgs
Qgd
VDS =160V ,
ID=9.0A
VGS =10V note 45
JCS630A
- 11 30 ns
- 70 150 ns
- 60 130 ns
- 65 140 ns
- 22 29 nC
- 3.6 - nC
- 10.2 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 9.0 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 36 A
正向压降
Drain-Source Diode Forward VSD VGS=0V, IS=9.0A
Voltage
- - 1.5 V
反向恢复时间
Reverse recovery time
反向恢复电荷
Reverse recovery charge
trr VGS=0V, IS=9.0A
- 140 - ns
Qrr dIF/dt=100A/μs (note 4) - 0.87 - μC
热特性 THERMAL CHARACTERISTIC
最大
项目
符号
Max
单位
Parameter
SymbolJCS630AV/ JCS630SA/
Unit
JCS630FA
RA BA/CA
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.70
1.74
3.33 /W
结到环境的热阻
Thermal Resistance, Junction to Ambient Rth(j-A)
110
62.5 62.5 /W
注释:
1:脉冲宽度由最高结温限制
2L=25mH, IAS=9.0A, VDD=50V, RG=25 ,起始结
TJ=25
3ISD 9.0A,di/dt 200A/μs,VDDBVDSS,起始结温
TJ=25
4:脉冲测试:脉冲宽度300μs,占空比2
5:基本与工作温度无关
Notes:
1Pulse width limited by maximum junction
temperature
2L=25mH, IAS=9.0A, VDD=50V, RG=25 ,Starting
TJ=25
3ISD 9.0A,di/dt 200A/μs,VDDBVDSS, Starting
TJ=25
4Pulse TestPulse Width 300μs,Duty Cycle2
5Essentially independent of operating temperature
版本:201110B
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JCS630A (JILIN SINO-MICROELECTRONICS)
N-CHANNEL MOSFET

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS630A
On-Region Characteristics
Transfer Characteristics
On-Resistance Variation vs.
Drain Current and Gate Voltage
10
150
1
25
Notes
0.1 1.250μs pulse test
2.VDS=40V
2 4 6 8 10
VGS Gate-Source Voltage[V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
Capacitance Characteristics
1
150
25
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD Source-Drain voltage[V]
Gate Charge Characteristics
版本:201110B
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N-CHANNEL MOSFET

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS630A
Breakdown Voltage Variation
vs. Temperature
On-Resistance Variation
vs. Temperature
1.2 3.0
2.5
1.1
2.0
1.0 1.5
0.9 Notes
1. VGS=0V
2. ID=250μA
0.8
-75 -50 -25 0 25 50 75 100 125 150
Tj []
Maximum Safe Operating Area
For JCS630VA/RA/SA/BA/CA
1.0
Notes
0.5 1. VGS=10V
2. ID=4.5A
0.0
-75 -50 -25 0 25 50 75 100 125
Tj [ ]
Maximum Safe Operating Area
For JCS630FA
150
Maximum Drain Current
vs. Case Temperature
版本:201110B
6/16


JCS630A (JILIN SINO-MICROELECTRONICS)
N-CHANNEL MOSFET

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS630VA/RA
JCS630A
Transient Thermal Response Curve
For JCS630SA/BA/CA
Transient Thermal Response Curve
For JCS630FA
版本:201110B
7/16


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N-CHANNEL MOSFET

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外形尺寸 PACKAGE MECHANICAL DATA
IPAK Gh
JCS630A
单位 Unitmm
版本:201110B
8/16


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N-CHANNEL MOSFET

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外形尺寸 PACKAGE MECHANICAL DATA
DPAK Gh
JCS630A
版本:201110B
9/16


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N-CHANNEL MOSFET

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外形尺寸 PACKAGE MECHANICAL DATA
IPAK Gf
JCS630A
版本:201110B
10/16


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N-CHANNEL MOSFET

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外形尺寸 PACKAGE MECHANICAL DATA
DPAK Gf
JCS630A
版本:201110B
11/16


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N-CHANNEL MOSFET

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外形尺寸 PACKAGE MECHANICAL DATA
TO-262
JCS630A
单位 Unitmm
版本:201110B
12/16


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N-CHANNEL MOSFET

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外形尺寸 PACKAGE MECHANICAL DATA
TO-263
JCS630A
单位 Unitmm
版本:201110B
13/16


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N-CHANNEL MOSFET

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外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
JCS630A
单位 Unitmm
版本:201110B
14/16


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N-CHANNEL MOSFET

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外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
JCS630A
单位 Unitmm
版本:201110B
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N-CHANNEL MOSFET

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R JCS630A
注意事项
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
吉林华微电子股份有限公司
公司地址:吉林省吉林市深圳街 99
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
市场营销部
地址:吉林省吉林市深圳街 99
邮编:132013
电话: 86-432-64675588
64675688
64678411
传真: 86-432-64671533
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel86-432-64678411
Fax86-432-64665812
Web Sitewww.hwdz.com.cn
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64675588
64675688
64678411
Fax: 86-432-64671533
版本:201110B
16/16




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