S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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S-57K1 A Series
FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE
www.sii-ic.com
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
© SII Semiconductor Corporation, 2013-2015
Rev.1.5_01
The S-57K1 A Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and
high-withstand voltage.
The output voltage changes when the S-57K1 A Series detects the intensity level of magnetic flux density and a polarity
change. Using the S-57K1 A Series with a magnet makes it possible to detect the rotation status in various devices.
The S-57K1 A Series includes a reverse voltage protection circuit and an output current limit circuit.
High-density mounting is possible by using the small SOT-23-3 package.
Due to its high-accuracy magnetic characteristics, the S-57K1 A Series can make operation's dispersion in the system
combined with magnet smaller.
Caution This product can be used in vehicle equipment and in-vehicle equipment. Before using the product in the
purpose, contact to SII Semiconductor Corporation is indispensable.
Features
Pole detection:
Detection logic for magnetism*1:
Output form*1:
Magnetic sensitivity*1:
Operating cycle:
Power supply voltage range:
Built-in regulator
Built-in reverse voltage protection circuit
Built-in output current limit circuit
Operation temperature range:
Lead-free (Sn 100%), halogen-free
AEC-Q100 in process*2
*1. The option can be selected.
*2. Contact our sales office for details.
Bipolar latch
VOUT = "L" at S pole detection
VOUT = "H" at S pole detection
Nch open-drain output, Nch driver + built-in pull-up resistor
BOP = 3.0 mT typ., BOP = 6.0 mT typ.
tCYCLE = 8.0 μs typ.
VDD = 3.5 V to 26.0 V
Ta = 40°C to +125°C
Applications
Automobile equipment
Home appliance
DC brushless motor
Housing equipment
Industrial equipment
Package
SOT-23-3
1


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57K1 A Series
Rev.1.5_01
Block Diagrams
1. Nch open-drain output product
VDD
VSS
Reverse voltage
protection circuit
Regulator
Chopping
stabilized
amplifier
Output current limit circuit
OUT
*1
*1. Parasitic diode
Figure 1
2. Nch driver + built-in pull-up resistor product
VDD
VSS
Reverse voltage
protection circuit
Regulator
Chopping
stabilized
amplifier
Output current limit circuit
*1. Parasitic diode
Figure 2
OUT
*1
2


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.5_01
S-57K1 A Series
AEC-Q100 in Process
Contact our sales office for details of AEC-Q100 reliability specification.
Product Name Structure
1. Product name
S-57K1 x B x x A - M3T2 U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package name (abbreviation) and packing specifications*1
M3T2: SOT-23-3, Tape
Operation temperature
A: Ta = 40°C to +125°C
Magnetic sensitivity
1: BOP = 3.0 mT typ.
2: BOP = 6.0 mT typ.
Detection logic for magnetism
L: VOUT = "L" at S pole detection
H: VOUT = "H" at S pole detection
Pole detection
B: Bipolar latch
*1. Refer to the tape drawing.
Output form
N: Nch open-drain output
R: Nch driver + built-in pull-up resistor
2. Package
Package Name
SOT-23-3
Table 1 Package Drawing Codes
Dimension
MP003-C-P-SD
Tape
MP003-C-C-SD
Reel
MP003-Z-R-SD
3. Product name list
Table 2
Product Name
Output Form
Pole Detection
S-57K1NBL1A-M3T2U Nch open-drain output
Bipolar latch
S-57K1NBL2A-M3T2U Nch open-drain output
Bipolar latch
S-57K1NBH1A-M3T2U Nch open-drain output
Bipolar latch
S-57K1RBL1A-M3T2U Nch driver + built-in pull-up resistor Bipolar latch
Remark Please contact our sales office for products other than the above.
Detection Logic
for Magnetism
VOUT = "L" at S pole
detection
VOUT = "L" at S pole
detection
VOUT = "H" at S pole
detection
VOUT = "L" at S pole
detection
Magnetic
Sensitivity (BOP)
3.0 mT typ.
6.0 mT typ.
3.0 mT typ.
3.0 mT typ.
3


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57K1 A Series
Rev.1.5_01
Pin Configuration
1. SOT-23-3
Top view
1
23
Pin No.
1
2
3
Table 3
Symbol
VSS
VDD
OUT
Description
GND pin
Power supply pin
Output pin
Figure 3
Absolute Maximum Ratings
Table 4
Item
Power supply voltage
Output current
Output voltage
Nch open-drain output product
Nch driver + built-in pull-up resistor product
Power dissipation
Junction temperature
Operation ambient temperature
Storage temperature
*1. When mounted on board
[Mounted board]
(1) Board size:
(2) Board name:
114.3 mm × 76.2 mm × t1.6 mm
JEDEC STANDARD51-7
Symbol
VDD
IOUT
VOUT
PD
Tj
Topr
Tstg
(Ta = +25°C unless otherwise specified)
Absolute Maximum Rating
Unit
VSS 28.0 to VSS + 28.0
20
V
mA
VSS 0.3 to VSS + 28.0
VSS 0.3 to VDD + 0.3
650*1
V
V
mW
40 to +150
°C
40 to +125
°C
40 to +150
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
700
600
500
400
300
200
100
0
0 50 100 150
Ambient temperature (Ta) [°C]
Figure 4 Power Dissipation of Package (When Mounted on Board)
4


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.5_01
S-57K1 A Series
Electrical Characteristics
Table 5
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Power supply voltage
Current consumption
VDD
IDD
Current consumption
during reverse connection
IDDREV
Output voltage
Output drop voltage
Leakage current
Operating cycle
VOUT
VD
ILEAK
tCYCLE
Nch open-drain output product
Average value
Nch driver + built-in pull-up resistor product
Average value, VOUT = "H"
Nch open-drain output product
VDD = 26.0 V
Nch driver + built-in pull-up resistor product
VDD = 26.0 V
Nch open-drain output product
Output transistor Nch, VOUT = "L", IOUT = 10 mA
Nch driver + built-in pull-up resistor product
Output transistor Nch, VOUT = "L", IOUT = 10 mA
Nch driver + built-in pull-up resistor product
VOUT = "H", VD = VDD VOUT
Nch open-drain output product
Output transistor Nch, VOUT = "H" = 26.0 V
3.5 12.0 26.0 V
3.0 4.0 mA
3.0 4.0 mA
1
mA
5
mA
− − 0.4 V
− − 0.5 V
− − 20 mV
− − 10 μA
8.0 − μs
1
1
1
1
2
2
2
3
Operating frequency
fCYCLE
125 kHz
Output limit current
IOM VOUT = 12.0 V
22 70 mA 3
Start up time
tPON
20 − μs 4
Pull-up resistor
RL Nch driver + built-in pull-up resistor product
7 10 13 kΩ −
5


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57K1 A Series
Rev.1.5_01
Magnetic Characteristics
1. Product with BOP = 3.0 mT typ.
Table 6
Item
Operation point*1
Release point*2
Hysteresis width*3
S pole
N pole
Symbol
BOP
BRP
BHYS
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Condition
Min. Typ. Max. Unit Test Circuit
1.5 3.0 4.5 mT
4
4.5 3.0 1.5 mT
4
BHYS = BOP BRP
6.0 mT
4
2. Product with BOP = 6.0 mT typ.
Table 7
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item
Symbol
Condition
Min. Typ. Max. Unit Test Circuit
Operation point*1
Release point*2
Hysteresis width*3
S pole
N pole
BOP
BRP
BHYS
BHYS = BOP BRP
3.0 6.0 9.0 mT
9.0 6.0 3.0 mT
12.0 mT
4
4
4
*1. BOP: Operation point
BOP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied
to the S-57K1 A Series by the magnet (S pole) is increased (by moving the magnet closer).
VOUT retains the status until a magnetic flux density of the N pole higher than BRP is applied.
*2. BRP: Release point
BRP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied
to the S-57K1 A Series by the magnet (N pole) is increased (by moving the magnet closer).
VOUT retains the status until a magnetic flux density of the S pole higher than BOP is applied.
*3. BHYS: Hysteresis width
BHYS is the difference of magnetic flux density between BOP and BRP.
Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.
6


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HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.5_01
S-57K1 A Series
Test Circuits
A
R*1
VDD
820 Ω
S-57K1
A Series OUT
VSS
*1. Resistor (R) is unnecessary for the pull-up resistor built-in product.
Figure 5 Test Circuit 1
VDD
S-57K1
A Series OUT
A
VSS
V
Figure 6 Test Circuit 2
VDD
S-57K1
A Series OUT
VSS
V
A
Figure 7 Test Circuit 3
VDD
R*1
820 Ω
S-57K1
A Series OUT
VSS
V
*1. Resistor (R) is unnecessary for the pull-up resistor built-in product.
Figure 8 Test Circuit 4
7


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57K1 A Series
Rev.1.5_01
Standard Circuit
CIN
0.1 μF
VDD
R*1
820 Ω
S-57K1
A Series OUT
VSS
*1. Resistor (R) is unnecessary for the pull-up resistor built-in product.
Figure 9
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
8


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HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.5_01
S-57K1 A Series
Operation
1. Direction of applied magnetic flux
The S-57K1 A Series detects the magnetic flux density which is vertical to the marking surface.
Figure 10 shows the direction in which magnetic flux is being applied.
N
S
Marking surface
Figure 10
2. Position of Hall sensor
Figure 11 shows the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The following also shows the distance (typ. value) between the marking surface and the chip surface of a package.
Top view
1
The center of Hall sensor;
in this φ 0.3 mm
23
0.7 mm (typ.)
Figure 11
9


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HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57K1 A Series
Rev.1.5_01
3. Basic operation
The S-57K1 A Series changes the output voltage (VOUT) according to the level of the magnetic flux density and a
polarity change (N pole or S pole) applied by a magnet.
Definition of the magnetic field is performed every operating cycle indicated in "Electrical Characteristics".
3. 1 Product with VOUT = "L" at S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point
(BOP) after the S pole of a magnet is moved closer to the marking surface of the S-57K1 A Series, VOUT changes
from "H" to "L". When the N pole of a magnet is moved closer to the marking surface of the S-57K1 A Series and
the magnetic flux density of the N pole is higher than the release point (BRP), VOUT changes from "L" to "H". In case
of BRP < B < BOP, VOUT retains the status. Figure 12 shows the relationship between the magnetic flux density and
VOUT.
VOUT
BHYS
H
N pole
BRP 0
BOP
Magnetic flux density (B)
L
S pole
Figure 12
3. 2 Product with VOUT = "H" at S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds BOP after the S pole of a
magnet is moved closer to the marking surface of the S-57K1 A Series, VOUT changes from "L" to "H". When the
N pole of a magnet is moved closer to the marking surface of the S-57K1 A Series and the magnetic flux density of
the N pole is higher than BRP, VOUT changes from "H" to "L". In case of BRP < B < BOP, VOUT retains the status.
Figure 13 shows the relationship between the magnetic flux density and VOUT.
VOUT
BHYS
H
N pole
10
BRP 0
BOP
Magnetic flux density (B)
Figure 13
L
S pole


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.5_01
S-57K1 A Series
Precautions
If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feed-
through current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under the
environment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of the IC
by reading it multiple times.
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
Although this IC has a built-in output current limit circuit, it may suffer physical damage such as product deterioration
under the environment where the absolute maximum ratings are exceeded.
Although this IC has a built-in reverse voltage protection circuit, it may suffer physical damage such as product
deterioration under the environment where the absolute maximum ratings are exceeded.
The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should not exceed
the package power dissipation.
Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and
distortion during mounting the IC on a board or handle after mounting.
SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any
infringement by products including this IC of patents owned by a third party.
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HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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2.9±0.2
1
2
0.95±0.1
1.9±0.2
3
0.4±0.1
0.16
+0.1
-0.06
No. MP003-C-P-SD-1.1
TITLE
No.
ANGLE
UNIT
SOT233-C-PKG Dimensions
MP003-C-P-SD-1.1
mm
SII Semiconductor Corporation


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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ø1.5
+0.1
-0
2.0±0.1
4.0±0.1
3.2±0.2
ø1.0
+0.25
-0
4.0±0.1
0.23±0.1
1.4±0.2
1
23
Feed direction
No. MP003-C-C-SD-2.0
TITLE
No.
ANGLE
UNIT
SOT233-C-Carrier Tape
MP003-C-C-SD-2.0
mm
SII Semiconductor Corporation


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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12.5max.
Enlarged drawing in the central part
ø13±0.2
9.2±0.5
No. MP003-Z-R-SD-1.0
TITLE
No.
ANGLE
UNIT
SOT233-C-Reel
MP003-Z-R-SD-1.0
QTY.
3,000
mm
SII Semiconductor Corporation


S-57K1 (Seiko Instruments)
HIGH-SPEED BIPOLAR HALL EFFECT LATCH

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Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
7. The products described herein must not be used or provided (exported) for the purposes of the development of
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
missiles, or other military use.
8. The products described herein are not designed to be used as part of any device or equipment that may affect the
human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment,
aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where
they are used.
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.
The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
www.sii-ic.com




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