KF3N50DZ (KEC)
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
KF3N50DZ/DS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 2.5A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50DS)
trr(typ) = 300ns (KF3N50DZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
500
30
2.5
1.5
7
110
4
10
40
0.32
150
-55 150
3.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
(KF3N50DZ/DS)
D
G
S
2010. 11. 29
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KF3N50DZ (KEC)
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF3N50DZ/DS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=500V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 25V, VDS=0V
RDS(ON)
VGS=10V, ID=1.25A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=400V, ID=3A
VGS=10V
(Note4,5)
VDD=250V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
KF3N50DZ
KF3N50DS
KF3N50DZ
KF3N50DS
IS
VGS<Vth
ISP
VSD IS=2.5A, VGS=0V
trr
IS=3A, VGS=0V,
dIs/dt=100A/
Qrr
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=22mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
500 - - V
- 0.55 - V/
- - 10
2.5 - 4.5 V
- - 10
- 2.0 2.5
- 8.0 -
- 2.0 -
- 3.5 -
- 15 -
- 20 -
- 25 -
- 20 -
- 350 -
- 45 -
- 4.5 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
- 120 -
ns
- 1.1 -
- 0.25 -
C
1
KF3N50
DZ 001
1
2
KF3N50
DS 001
2
1 PRODUCT NAME
2 LOT NO
2010. 11. 29
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KF3N50DZ (KEC)
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF3N50DZ/DS
Fig1. ID - VDS
101
VGS=10V
VGS=7V
100
VGS=5V
10-1
10-2
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
TC=100 C
25 C
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source - Drain Voltage VSD (V)
2010. 11. 29
Revision No : 0
VDS=30V
101
Fig2. ID - VGS
TC=100 C
25 C
100
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
6
5
4
3 VGS=7V
2 VGS=10V
1
0
01 23 45 6
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS =10V
2.5 IDS = 1.5A
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50 100
Junction Temperature Tj ( C)
150
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KF3N50DZ (KEC)
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF3N50DZ/DS
Fig 7. C - VDS
1000
Ciss
100
Coss
10
Crss
1
0 5 10 15 20 25 30 35 40
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
10 Operation in this
area is limited by RDS(ON)
10µs
100µs
1 1ms
10ms
0.1
Tc= 25 C
Tj = 150 C
Single pulse
0.01
100
101
102
Drain - Source Voltage VDS (V)
DC
103
12
ID=3A
10
Fig8. Qg- VGS
8
VDS = 400V
6
4
2
0
0 2 4 6 8 10 12
Gate - Charge Qg (nC)
Fig10. ID - Tj
3.5
3
2.5
2
1.5
1
0.5
0
0 25 50 75 100 125 150
Junction Temperature Tj ( C)
Fig11. Transient Thermal Response Curve
10
2010. 11. 29
Duty=0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single
Pulse
0.01
0.00001
0.0001
0.001
0.01
PDM
t1
t2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
0.1 1 10
TIME (sec)
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KF3N50DZ (KEC)
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF3N50DZ/DS
Fig12. Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
1.0 mA
VGS
ID
VDS
Qgs
Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
50V
25
10 V
VGS
BVDSS
L
IAS
VDS
VDD
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
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KF3N50DZ (KEC)
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF3N50DZ/DS
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
IF
0.5 VDSS
10V
DUT
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
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