DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L,
MUN5231, DTC123EE,
DTC123EM3, NSBC123EF3
Digital Transistors (BRT)
R1 = 2.2 kW, R2 = 2.2 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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PIN CONNECTIONS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC−59
CASE 318D
STYLE 1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
XX M
1
XM 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 2
1
Publication Order Number:
DTC123E/D


DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
Table 1. ORDERING INFORMATION
Device
Part Marking
Package
Shipping
MUN2231T1G
8H
SC−59
3000 / Tape & Reel
(Pb−Free)
MMUN2231LT1G
A8H
SOT−23
3000 / Tape & Reel
(Pb−Free)
MUN5231T1G
8H
SC−70/SOT−323
3000 / Tape & Reel
(Pb−Free)
DTC123EET1G
8H
SC−75
3000 / Tape & Reel
(Pb−Free)
DTC123EM3T5G, NSVDTC123EM3T5G*
8H
SOT−723
(Pb−Free)
8000 / Tape & Reel
NSBC123EF3T5G
E (180°)**
SOT−1123
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
** (xx°) = Degree rotation in the clockwise direction.
300
250
200
(1) (2) (3) (4) (5)
150
100
(1) SC−75 and SC−70/SOT323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2231)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2231L)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5231)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTC123EE)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTC123EM3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
TJ, Tstg
230
338
1.8
2.7
540
370
264
287
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
246
400
2.0
3.2
508
311
174
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
202
310
1.6
2.5
618
403
280
332
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
−55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
−55 to +150
mW
mW/°C
°C/W
°C
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DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBC123EF3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
PD
RqJA
RqJL
TJ, Tstg
254
297
2.0
2.4
493
421
193
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
− − 100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
− − 500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
− − 2.3
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
8.0 15
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 5.0 mA)
VCE(sat)
− 0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
− 1.2 0.5
Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 20 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Vi(on)
VOL
VOH
2.0 1.7
− − 0.2
4.9 −
Vdc
Vdc
Vdc
Input Resistor
R1
1.5 2.2 2.9
kW
Resistor Ratio
R1/R2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
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DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
1
IC/IB = 10
0.1
TYPICAL CHARACTERISTICS
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3
1000
VCE = 10 V
25°C
150°C
100
10
25°C
150°C
−55°C
−55°C
1
0.01
0
4
3
2
1
0
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
0.1
50 0.1
f = 10 kHz
IE = 0 A
TA = 25°C
100
10
1 10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
150°C
25°C
−55°C
100
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
100
1
VO = 5 V
0.1
50 0 1 2 3 4
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
10
−55°C
25°C
1
150°C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
PACKAGE DIMENSIONS
D
3
HE 1
2
E
b
e
A
A1
SC−59
CASE 318D−04
ISSUE H
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN NOM MAX
A 1.00
1.15
1.30
A1 0.01
0.06
0.10
b 0.35 0.43 0.50
c 0.09 0.14 0.18
D 2.70
2.90
3.10
E 1.30
1.50
1.70
e 1.70 1.90 2.10
L 0.20
0.40
0.60
H E 2.50
2.80
3.00
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
PACKAGE DIMENSIONS
E
A
A1
D
3
12
e
HE
b
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
SEE VIEW C
c
0.25
q
L
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.10
L1 0.35
0.20
0.54
0.30
0.69
H E 2.10
q 0°
2.40
−−−
2.64
10°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
0.9
0.035
0.8
0.031
2.0
0.079
ǒ ǓSCALE 10:1
mm
inches
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DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
PACKAGE DIMENSIONS
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.70 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.20
0.38
0.56
H E 2.00
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
A2
c
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
PACKAGE DIMENSIONS
b 3 PL
0.20 (0.008) M D
−E−
2
3
1
C
L
SC−75/SOT−416
CASE 463
ISSUE F
e −D−
HE 0.20 (0.008) E
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN NOM MAX
A 0.70 0.80 0.90
A1 0.00 0.05 0.10
b 0.15 0.20 0.30
C 0.10 0.15 0.25
D 1.55 1.60 1.65
E 0.70 0.80 0.90
e 1.00 BSC
L 0.10 0.15 0.20
HE 1.50 1.60 1.70
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
INCHES
MIN NOM MAX
0.027 0.031 0.035
0.000 0.002 0.004
0.006 0.008 0.012
0.004 0.006 0.010
0.059 0.063 0.067
0.027 0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
ǒ mm Ǔ
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC123EM3 (ON Semiconductor)
Digital Transistors

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
PACKAGE DIMENSIONS
−X−
D
b1
3
−Y−
E
2X e
12
2X b
0.08 X Y
TOP VIEW
3X L
1
3X L2
BOTTOM VIEW
SOT−723
CASE 631AA
ISSUE D
A
HE
C
SIDE VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.45 0.50 0.55
b 0.15 0.21 0.27
b1 0.25 0.31 0.37
C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e 0.40 BSC
H E 1.15 1.20 1.25
L 0.29 REF
L2 0.15 0.20 0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2X 0.27
2X
0.40
PACKAGE
OUTLINE
1.50
3X 0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC123EM3 (ON Semiconductor)
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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3
PACKAGE DIMENSIONS
D −X−
−Y−
1 3E
2
TOP VIEW
A
SOT−1123
CASE 524AA
ISSUE C
c HE
SIDE VIEW
3X L2
e
b
0.08 X Y
2X b1
3X L
BOTTOM VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN MAX
A 0.34 0.40
b 0.15 0.28
b1 0.10 0.20
c 0.07 0.17
D 0.75 0.85
E 0.55 0.65
e 0.35 0.40
HE 0.95 1.05
L 0.185 REF
L2 0.05 0.15
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
1.20
3X 0.34
1
0.26
0.38 2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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