ESD8101 (ON Semiconductor)
ESD Protection Diode

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ESD8101, ESD8111
ESD Protection Diodes
Ultra Low Capacitance ESD Protection
Diode for High Speed Data Line
The ESD81x1 Series ESD protection diodes are designed to protect
high speed data lines from ESD. Ultra−low capacitance and low ESD
clamping voltage make this device an ideal solution for protecting
voltage sensitive high speed data lines.
Features
Low Capacitance (0.20 pF Typ, I/O to GND)
Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
Low ESD Clamping Voltage
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
USB 3.0/3.1
MHL 2.0
eSATA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range TJ −55 to +150 °C
Storage Temperature Range
Tstg − 55 to +150 °C
Lead Solder Temperature −
Maximum (10 Seconds)
TL 260 °C
ESD8101:
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ESD8111:
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ESD
±23 kV
±23 kV
±30 kV
±30 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
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MARKING
DIAGRAMS
ESD8101 (01005)
DSN2
CASE 152AK
T
ESD8101P (01005)
DSN2
CASE TBD*
X
ESD8111 (0201)
WLCSP2
CASE 567AV
ESD8111P (0201)
WLCSP2
CASE TBD*
T, F, X = Device Code
M = Date Code
* In Development
FM
XM
PIN CONFIGURATION
AND SCHEMATIC
12
=
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 1
1
Publication Order Number:
ESD8101/D


ESD8101 (ON Semiconductor)
ESD Protection Diode

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ESD8101, ESD8111
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
VRWM Working Peak Voltage
IR
VBR
IT
VHOLD
IHOLD
RDYN
IPP
VC
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
Maximum Peak Pulse Current
Clamping Voltage @ IPP
VC = VHOLD + (IPP * RDYN)
I
IPP
RDYN
IHOLD
VBR VCVRWMVHOLD
IT
IR
IR
IT
VHOLDVRWMVC
IHOLD
V
VBR
RDYN
−IPP
VC = VHOLD + (IPP * RDYN)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Working Voltage
VRWM I/O Pin to GND
3.3 V
Breakdown Voltage
VBR IT = 1 mA, I/O Pin to GND
5.5 7.9 8.6 V
Reverse Leakage Current
IR VRWM = 3.3 V, I/O Pin to GND
1.0 mA
Reverse Holding Voltage
VHOLD I/O Pin to GND
2.1 V
Holding Reverse Current
IHOLD I/O Pin to GND
17 mA
ESD8101, ESD8111
Clamping Voltage
TLP (Note 1)
VC IPP = 8 A IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
IPP = 16 A
IEC 61000−4−2 Level 2 equivalent
(±8 kV Contact, ±15 kV Air)
6.5
10
V
Junction Capacitance
CJ VR = 0 V, f = 1 MHz
0.2 0.4 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
ORDERING INFORMATION
Device
Package
Shipping
ESD8101FCT5G
DSN2 (Pb−Free)
10,000 / Tape & Reel
ESD8111FCT5G
WLCSP2 (Pb−Free)
10,000 / Tape & Reel
ESD8101PFCT5G**
Side wall Isolated 01005
10,000 / Tape & Reel
ESD8111PFCT5G**
Side wall Isolated 0201
10,000 / Tape & Reel
** In Development. Contact local sales rep for availability.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2


ESD8101 (ON Semiconductor)
ESD Protection Diode

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ESD8101, ESD8111
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
−3.5 −2.5 −1.5 −0.5 0.5 1.5 2.5
VBIAS (V)
Figure 1. ESD8101 CV Characteristics
3.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
−3.5 −2.5 −1.5 −0.5 0.5 1.5 2.5
VBIAS (V)
Figure 2. ESD8111 CV Characteristics
3.5
2
0
−2
−4
−6
−8
−10
1E7
1E8 1E9 1E10 3E10
FREQUENCY (Hz)
Figure 3. ESD8101 S21 Insertion Loss
2
0
−2
−4
−6
−8
−10
1E7
1E8 1E9 1E10 3E10
FREQUENCY (Hz)
Figure 4. ESD8111 S21 Insertion Loss
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
12 3 4567 89
FREQUENCY (GHz)
Figure 5. ESD8101 Capacitance over
Frequency
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1 2 3 4 5 6 7 8 9 10
FREQUENCY (GHz)
Figure 6. ESD8111 Capacitance over
Frequency
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ESD8101 (ON Semiconductor)
ESD Protection Diode

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ESD8101, ESD8111
TYPICAL CHARACTERISTICS
20 10
18
16 8
14
12 6
10
84
6
42
2
00
0 2 4 6 8 10 12 14 16 18 20
VC, VOLTAGE (V)
Figure 7. ESD8101 Positive TLP I−V Curve
20 10
18
16 8
14
12 6
10
84
6
42
2
0
02
46
0
8 10 12 14 16 18 20
VC, VOLTAGE (V)
Figure 8. ESD8111 Positive TLP I−V Curve
−20
−18
−16
−14
−12
−10
−8
−6
−4
−2
0
0
10
8
6
4
2
0
2 4 6 8 10 12 14 16 18 20
VC, VOLTAGE (V)
Figure 9. ESD8101 Negative TLP I−V Curve
−20
−18
−16
−14
−12
−10
−8
−6
−4
−2
0
0
10
8
6
4
2
0
2 4 6 8 10 12 14 16 18 20
VC, VOLTAGE (V)
Figure 10. ESD8111 Negative TLP I−V Curve
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ESD8101 (ON Semiconductor)
ESD Protection Diode

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ESD8101, ESD8111
IEC 61000−4−2 Spec.
Level
First Peak
Test Volt- Current Current at
age (kV)
(A) 30 ns (A)
1 2 7.5 4
2 4 15 8
3 6 22.5 12
48
30 16
Current at
60 ns (A)
2
4
6
8
IEC61000−4−2 Waveform
Ipeak
100%
90%
I @ 30 ns
I @ 60 ns
10%
Figure 11. IEC61000−4−2 Spec
tP = 0.7 ns to 1 ns
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 12. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 13 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
L
50 W Coax
Cable
S Attenuator
÷
50 W Coax
Cable
10 MW
IM VM
VC DUT
Oscilloscope
Figure 12. Simplified Schematic of a Typical TLP
System
Figure 13. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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ESD8101 (ON Semiconductor)
ESD Protection Diode

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ESD8101, ESD8111
PACKAGE DIMENSIONS − ESD8101 (01005)
DSN2, 0.435x0.23, 0.27P, (01005)
CASE 152AK
ISSUE A
D
PIN 1
INDICATOR
ÉÉÉÉ2X 0.02 C
ÉÉ2X 0.02 C TOP VIEW
2X 0.05 C
2X 0.02 C
SIDE VIEW
A
B
E
A
A1
C
SEATING
PLANE
0.05 M C A B
e
2X b
1
2X L
0.05 M C A B BOTTOM VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN MAX
A 0.165 0.195
A1 −−− 0.030
b 0.177 0.193
D 0.435 BSC
E 0.230 BSC
e 0.270 BSC
L 0.112 0.128
RECOMMENDED
SOLDER FOOTPRINT*
0.44
1
2X
0.23
2X 0.16
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
PACKAGE DIMENSIONS − ESD8111 (0201)
D AB
WLCSP2, 0.6x0.3
CASE 567AV
ISSUE A
2X 0.02 C
2X 0.02 C
E
TOP VIEW
0.02 C
0.02 C
A1
SIDE VIEW
A
C
SEATING
PLANE
e 2X L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN MAX
A 0.25 0.30
A1 0.00 0.05
b 0.14 0.17
D 0.60 BSC
E 0.30 BSC
e 0.36 BSC
L 0.19 0.24
RECOMMENDED
SOLDER FOOTPRINT*
2X
0.33
2X b
0.05 C A B
BOTTOM VIEW
2X 0.28
0.81
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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ESD8101 (ON Semiconductor)
ESD Protection Diode

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ESD8101, ESD8111
PACKAGE DIMENSIONS − ESD8101P (01005)
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ESD8101 (ON Semiconductor)
ESD Protection Diode

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ESD8101, ESD8111
PACKAGE DIMENSIONS − ESD8111P (0201)
ON Semiconductor and the
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