2SJ665 (ON Semiconductor)
P-Channl Silicon MOSFET

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Ordering number : EN8590A
2SJ665
P-Channel Power MOSFET
–100V, –27A, 77mΩ, TO-263-2L
http://onsemi.com
Features
ON-resistance RDS(on)1=59mΩ(typ.)
4V drive
Input capacitance Ciss=4200pF (typ.)
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1)
*2 L100μH, single pulse
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
--100
±20
--27
--108
65
150
--55 to +150
48
--27
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7535-001
10.0
4
1 23
2.54
1.27
0.8
2.54
4.5
1.3
0.254
2SJ665-DL-1E
8.0
5.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
J665
LOT No.
DL
Electrical Connection
2, 4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM TC-00002779/N1805QA MSIM TB-00001098 No.8590-1/7


2SJ665 (ON Semiconductor)
P-Channl Silicon MOSFET

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2SJ665
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--14A
ID=--14A, VGS=--10V
ID=--14A, VGS=--4V
VDS=--20V, f=1MHz
See Fig.2
VDS=--50V, VGS=--10V, ID=--27A
IS=--27A, VGS=0V
min
--100
Ratings
typ
--1.2
15
25
59
75
4200
280
220
30
150
330
135
74
12.8
14.7
--0.98
max
--1
±10
--2.6
77
105
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
0V
--10V
50Ω
RG
50Ω
L
2SJ665
VDD
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --50V
ID= --14A
RL=3.57Ω
D VOUT
2SJ665
P.G 50Ω S
Ordering Information
Device
2SJ665-DL-1E
Package
TO-263-2L
Shipping
800pcs./reel
memo
Pb Free
No.8590-2/7


2SJ665 (ON Semiconductor)
P-Channl Silicon MOSFET

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--60
Tc=25°C
--50
--40
--30
ID -- VDS
--10V
--6V
2SJ665
--4V
--60
VDS= --10V
--50
--40
--30
ID -- VGS
--20
--10 VGS= --3V
0
0 --1 --2 --3 --4 --5 --6 --7
Drain-to-Source Voltage, VDS -- V IT08790
RDS(on) -- VGS
140
ID= --14A
120
100
Tc=75°C
80
25°C
60
--25°C
40
20
0
--2 --3 --4 --5 --6 --7 --8
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
100
VDS= --10V
7
5
--9 --10
IT08792
3
2
25°C
10
7
Tc=
--25°C
75°C
5
3
2
1.0
7
--0.1
1000
7
5
3
2
100
7
5
3
2
23
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
SW Time -- ID
2 3 57
IT08794
td(off)
VDD= --50V
VGS= --10V
tf
tr
td(on)
10
--0.1
23
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
2 3 57
IT08796
--20
--10
0
0
140
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT08791
RDS(on) -- Tc
120
100
80
60
I DI=D-=-1-4-1A4,AV, GVSG=S-=-4-V-10V
40
20
0
--50
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
10000
7
5
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT08793
VGS=0V
--0.3 --0.6 --0.9 --1.2 --1.5
Diode Forward Voltage, VSD -- V IT08795
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
1000
7
5
3
2
100
0
Coss
Crss
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT08797
No.8590-3/7


2SJ665 (ON Semiconductor)
P-Channl Silicon MOSFET

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2SJ665
--10
VDS= --50V
--9 ID= --27A
--8
VGS -- Qg
--7
--6
--5
--4
--3
--2
--1
0
0 10 20 30 40 50 60
Total Gate Charge, Qg -- nC
PD -- Tc
70
65
60
70 80
IT08798
ASO
2
IDP= --108A(PW10μs)
--100
7
5
3 ID= --27A
2
--10
7
5
3
DC
1001m0sms1ms
operation
100μs10μs
2
Operation in
--1.0 this area is
7
5
limited by RDS(on).
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2
Drain-to-Source Voltage, VDS -- V IT16904
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT08758
No.8590-4/7


2SJ665 (ON Semiconductor)
P-Channl Silicon MOSFET

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Taping Specication
2SJ665-DL-1E
2SJ665
No.8590-5/7


2SJ665 (ON Semiconductor)
P-Channl Silicon MOSFET

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Outline Drawing
2SJ665-DL-1E
2SJ665
Land Pattern Example
Mass (g) Unit
1.5
* For reference
mm
Unit: mm
No.8590-6/7


2SJ665 (ON Semiconductor)
P-Channl Silicon MOSFET

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2SJ665
Note on usage : Since the 2SJ665 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.8590-7/7




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