MJ15016G (ON Semiconductor)
Complementary Silicon High-Power Transistors

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2N3055AG (NPN),
MJ15015G (NPN),
MJ15016G (PNP)
Complementary Silicon
High-Power Transistors
These PowerBase complementary transistors are designed for high
power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
High Current−Gain − Bandwidth
Safe Operating Area
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N3055AG
MJ15015G, MJ15016G
VCEO
60
120
Vdc
Collector−Base Voltage
2N3055AG
MJ15015G, MJ15016G
VCBO
100
200
Vdc
Collector−Emitter Voltage Base
Reversed Biased
2N3055AG
MJ15015G, MJ15016G
VCEV
100
200
Vdc
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation
@ TC = 25_C
2N3055AG
MJ15015G, MJ15016G
Derate above 25_C
2N3055AG
MJ15015G, MJ15016G
VEBO
IC
IB
PD
7.0
15
7.0
115
180
Vdc
Adc
Adc
W
W
0.65 W/_C
1.03 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max Max Unit
1.52 0.98 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 7
1
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15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATTS
PNP
CASE 3
NPN
CASE 3
BASE
1
BASE
1
EMITTER 2
EMITTER 2
CASE
2
1
TO−204 (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
2N3055AG
AYWW
MEX
MJ1501xG
AYWW
MEX
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX
= Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
2N3055A/D


MJ15016G (ON Semiconductor)
Complementary Silicon High-Power Transistors

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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
Collector Cutoff Current (Note 3)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150_C)
Emitter Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
SECOND BREAKDOWN (Note 3)
2N3055AG VCEO(sus)
MJ15015G, MJ15016G
2N3055AG
MJ15015G, MJ15016G
ICEO
2N3055AG
MJ15015G, MJ15016G
ICEV
2N3055AG
MJ15015G, MJ15016G
ICEV
2N3055AG
MJ15015G, MJ15016G
IEBO
Second Breakdown Collector Current with Base Forward Biased
(t = 0.5 s non−repetitive)
2N3055AG
(VCE = 60 Vdc)
MJ15015G, MJ15016G
ON CHARACTERISTICS (Note 2 and 3)
IS/b
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS (Note 3)
hFE
VCE(sat)
VBE(on)
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055AG, MJ15015G
MJ15016G
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2N3055AG only) (Note 3)
fT
Cob
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
(VCC = 30 Vdc, IC = 4.0 Adc,
IB1 = IB2 = 0.4 Adc,
tp = 25 ms Duty Cycle v 2%
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3. Indicates JEDEC Registered Data. (2N3055A)
td
tr
ts
tf
Min
60
120
1.95
3.0
10
20
5.0
0.7
0.8
2.2
60
Max
0.7
0.1
5.0
1.0
30
6.0
5.0
0.2
70
70
1.1
3.0
5.0
1.8
6.0
18
600
0.5
4.0
3.0
6.0
Unit
Vdc
mAdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
MHz
pF
ms
ms
ms
ms
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MJ15016G (ON Semiconductor)
Complementary Silicon High-Power Transistors

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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
200
150
MJ15015
MJ15016
100
50 2N3055A
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
200
100
70
50
30
20
10
7
5
3
2
0.2
TJ = 150°C
- 55°C
VCE = 4.0 V
25°C
0.3 0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
15
2.8
TJ = 25°C
2.4
2
1.6 IC = 1 A
4A 8A
1.2
0.8
0.4
0
0.005 0.01 0.02 0.05 0.1 0.2
0.5 1 2
IB, BASE CURRENT (AMP)
Figure 3. Collector Saturation Region
5
3.5
TC = 25°C
3
2.5
2
1.5
1
0.5
0
0.2 0.3
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 10
0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
20
10
5.0 MJ15016
2.0
2N3055A
MJ15015
1.0
0.1
0.2 0.3
0.5
1.0 2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Current−Gain − Bandwidth Product
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MJ15016G (ON Semiconductor)
Complementary Silicon High-Power Transistors

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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
+13 V
0
25 ms
-11 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
VCC
+ 30 V
7.5 W
30 W SCOPE
1N6073
-5 V
Figure 6. Switching Times Test Circuit
(Circuit shown is for NPN)
10
7 VCC = 30 V
5 IC/IB = 10
3 TJ = 25°C
2
1
0.7
0.5
tr
0.3
0.2
0.1
0.2 0.3
td
0.5 0.7 1
23 5
IC, COLLECTOR CURRENT (AMP)
Figure 7. Turn−On Time
7 10 15
10
7
5
3
2 ts
0.1 tf
0.7
0.5 VCC = 30
IC/IB = 10
0.3 IB1 = IB2
0.2 TJ = 25°C
0.1
0.2 0.3 0.5 0.7
1
23 5
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Turn−Off Times
7 10 15
400
200 Cib
100
TJ = 25°C
2N3055A
MJ15015
MJ15016
50
30
20
1.0 2.0
Cob
5.0 10 20 50 100 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
500 1000
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MJ15016G (ON Semiconductor)
Complementary Silicon High-Power Transistors

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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
NPN
10,000
1000
VCE = 30 V
COLLECTOR CUT−OFF REGION
PNP
1000
VCE = 30 V
100
100
TJ = 150°C
10
100°C
1.0
0.1 REVERSE
IC = ICES
FORWARD
0.01
+ 0.2
25°C
+ 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015
- 0.5
20
30 ms
10
100 ms
1 ms
5
BONDING WIRE LIMIT
2 THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100 ms
dc
1
10 20
60 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
2N3055A
10 TJ = 150°C
1.0
100°C
0.1
REVERSE
0.01 25°C
IC = ICES
FORWARD
0.001
- 0.2
20
10
- 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 11. MJ15016
+ 0.5
0.1 ms
5.0
1.0 ms
2.0
1.0
0.5
0.2
15
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100 ms
dc
20 30
60 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
120
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25_C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device
2N3055AG
MJ15015G
MJ15016G
Package
TO−204
(Pb−Free)
TO−204
(Pb−Free)
TO−204
(Pb−Free)
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Shipping
100 Units / Tray
100 Units / Tray
100 Units / Tray


MJ15016G (ON Semiconductor)
Complementary Silicon High-Power Transistors

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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
E
V
H
A
N
C
−T−
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
2
1
−Y−
GB
−Q−
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B --- 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N --- 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
--- 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
--- 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N3055A/D




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