OSF12N60C (OCENME)
600V N-Channel MOSFET

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TOSSPP1122NN6600MC / TOSSFF1122NN6600MC
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using oTcrueensmeem‘si‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 12.0A, 600V, RDS(on) = 0.650@VGS = 10 V
• Low gate charge ( typical 52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
◀▲
{G
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
OTSSPP1122NN6600MC TOSSFF1122NN6600MC
600
12.0 12.0*
7.4 7.4*
48 48 *
± 30
865
23.1
4.5
231 54
1.85 0.43
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
OSP12N60C
0.54
0.5
62.5
OSF12N60C
2.33
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W


OSF12N60C (OCENME)
600V N-Channel MOSFET

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OSP12N60C / OSF12N60C
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.7
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.0A
2.0 --
-- 0.53
--
--
1
10
100
-100
4.0
0.65
V
V/°C
µA
µA
nA
nA
V
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1850
-- 180
-- 20
--
--
--
pF
pF
pF
VDD = 300 V, ID = 12.0A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 12.0A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
30
90
140
90
52
8.5
20.0
--
--
--
--
-
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 12.0 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11.0mH, IAS = 12.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 12.0 A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 12.0
-- 48.0
-- 1.4
430 --
5.0 --
A
A
V
ns
µC


OSF12N60C (OCENME)
600V N-Channel MOSFET

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OSP12N60C / OSF12N60C
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics


OSF12N60C (OCENME)
600V N-Channel MOSFET

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OSP12N60C / OSF12N60C
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
for TOSSPP1122NN6600MC
Figure 9-2. Maximum Safe Operating Area
for TOSSFF1122NN6600MC
Figure 10. Maximum Drain Current
vs Case Temperature


OSF12N60C (OCENME)
600V N-Channel MOSFET

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OSP12N60C / OSF12N60C
Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve
for TOSSPP1122NN6600MC
Figure 11-2. Transient Thermal Response Curve
for OTSSFF1122NN6600MC


OSF12N60C (OCENME)
600V N-Channel MOSFET

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OSP12N60C / OSF12N60C
Gate Charge Test Circuit & Waveform
50KΩ
SameType
asDUT
12V
200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
EAS=--21-- LIAS2
BVDSS
--------------------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
DUT
VDD
VDS(t)
tp Time


OSF12N60C (OCENME)
600V N-Channel MOSFET

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OSP12N60C / OSF12N60C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
S am e T ype
as DU T
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
I SD
(DUT )
V DS
(DUT )
D
=
- -G- - a- -t-e- - -P- -u- l-s- e- - -W- - -i -d- t-h- -
G a te P u ls e P e rio d
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD




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