CPH6445 (ON Semiconductor)
N-Channel Power MOSFET

No Preview Available !

Click to Download PDF File for PC

Ordering number : ENA1532B
CPH6445
N-Channel Power MOSFET
60V, 3.5A, 117m, Single CPH6
http://onsemi.com
Features
4V drive
Low ON-resistance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10ms, duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
60
±20
3.5
14
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
0.15 CPH6445-TL-E
CPH6445-TL-W
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002973/61312TKIM/21710TKIM PE No. A1532-1/5


CPH6445 (ON Semiconductor)
N-Channel Power MOSFET

No Preview Available !

Click to Download PDF File for PC

CPH6445
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.7A, VGS=4.5V
ID=0.7A, VGS=4V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
min
60
Ratings
typ
1.2
1.2 2.0
92
120
132
310
40
25
6.0
5.5
27
13
6.8
1.1
1.4
0.85
max
1
±10
2.6
117
168
185
1.2
Unit
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10ms
D.C.1%
G
VDD=30V
ID=1.5A
RL=20
D VOUT
CPH6445
P.G 50S
Ordering Information
Device
CPH6445-TL-E
CPH6445-TL-W
Package
CPH6
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
No. A1532-2/5


CPH6445 (ON Semiconductor)
N-Channel Power MOSFET

No Preview Available !

Click to Download PDF File for PC

CPH6445
1.8 ID -- VDS
1.6 3.0V
1.4
1.2
1.0
0.8
0.6 VGS= 2.5V
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT14866
390 RDS(on) -- VGS
360 Ta=25°C
330
300
270 ID=0.7A
240
1.5A
210
180
150
120
90
60
30
0 2 4 6 8 10 12 14 16
7
Gate-to-Source
| yfs
Voltage, VGS
| -- ID
--
V
IT14868
5 VDS=10V
3
2
1.0
7
5
3
2
Ta= --25°C
25°C
0.1
7
75°C
5
3
2
0.01
7
0.001 2 3
7
5
5 70.01 2 3 5 7 0.1 2 3 5 7 1.0
Drain
SW
Current,
Time
I-D-
-- A
ID
2 3 5 7 10
IT14870
VDD=30V
VGS=10V
3 td(off)
2
tf
10
7 td(on)
5 tr
3
2
0.1
23
5 7 1.0
23
57
Drain Current, ID -- A
IT14872
5.0
VDS=10V
4.5
ID -- VGS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT14867
260 RDS(on) -- Ta
240
210
180
150
120
90
V GVVSG=GS4S=V=4,1.5I0DVV=,,I0ID.D7==A01.7.5AA
60
30
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14869
10 IS -- VSD
7
5
VGS=0V
3
2
1.07
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
1000
7
0.2 0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT14871
Ciss, Coss, Crss -- VDS
f=1MHz
5
Ciss
3
2
100
7
5
3
2
10
0
Coss
Crss
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT14873
No. A1532-3/5


CPH6445 (ON Semiconductor)
N-Channel Power MOSFET

No Preview Available !

Click to Download PDF File for PC

CPH6445
10
VDS=30V
9 ID=3.5A
8
VGS -- Qg
7
6
5
4
3
2
1
0
01234567
Total Gate Charge, Qg -- nC
IT14874
1.8 PD -- Ta
When mounted on ceramic substrate
1.6 (1200mm2×0.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14876
ASO
3
2 IDP=14A (PW10ms)
10
7
5
3
2
1.0
7
5
3
2
0.1
ID=3.5A
Operation in
is limited by
DC
this area
RDS(on).
operatio1n0(0Tm1a0s=m215sm1°C0s0)m1s0ms
7
5
3 Ta=25°C
2 Single pulse
0.01 When mounted on ceramic substrate (1200mm2×0.8mm)
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT14875
No. A1532-4/5


CPH6445 (ON Semiconductor)
N-Channel Power MOSFET

No Preview Available !

Click to Download PDF File for PC

Outline Drawing
CPH6445-TL-E, CPH6445-TL-W
CPH6445
Land Pattern Example
Mass (g) Unit
0.015
* For reference
mm
0.6
Unit: mm
0.95 0.95
Note on usage : Since the CPH6445 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1532-5/5




CPH6445.pdf
Click to Download PDF File