
Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO2216NO1
4/5
6 8 10
1/2
VUO2216NO1
3~
Rectifier
VRRM =
I DAV =
I FSM =
1600 V
30 A
150 A
Features / Advantages:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: V1APack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b

Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. nonrepetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1600 V
VR = 1600 V
forward voltage drop
IF = 10 A
IF = 30 A
IF = 10 A
IF = 30 A
bridge output current
TC = 110°C
rectangular
d=⅓
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VUO2216NO1
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
Ratings
min. typ. max.
1700
1600
10
0.7
1.19
1.59
1.13
1.66
30
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.84 V
28 mΩ
2.5 K/W
0.4 K/W
50 W
150 A
160 A
130 A
140 A
115 A²s
105 A²s
85 A²s
82 A²s
4 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b

VUO2216NO1
Package V1APack
Symbol
I RMS
Tstg
T VJ
Weight
Definition
RMS current
storage temperature
virtual junction temperature
Conditions
per terminal
M D mounting torque
d Spp/App
d Spb/Apb
creepage distance on surface  striking distance through air
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL ≤ 1 mA
Ratings
min.
40
40
2
typ. max.
100
125
150
37
2.5
6.0
12.0
3600
3000
Unit
A
°C
°C
g
Nm
mm
mm
V
V
Date Code Location
yywwA
Part Number (Typ)
Lot No.:
2D Data Matrix
Ordering
Standard
Part Number
VUO2216NO1
Marking on Product
VUO2216NO1
Delivery Mode
Box
Quantity Code No.
10 461091
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max
R0 max
threshold voltage
slope resistance *
0.84
27
* on die level
T VJ = 150 °C
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b

Outlines V1APack
VUO2216NO1
4/5
6 8 10
1/2
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b

VUO2216NO1
Rectifier
30 130 120
50 Hz
0.8 x V RRM
VR = 0 V
120 100
20
IF
[A]
10
TVJ =
125°C
150°C
0
0.4 0.8
TVJ = 25°C
1.2 1.6
VF [V]
2.0
Fig. 1 Forward current vs.
voltage drop per diode
110
100
IFSM
90
[A]
80
TVJ = 45°C
TVJ = 150°C
70
60
103
102
101
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
80
I2t
60
[A2s]
40
TVJ = 45°C
TVJ = 150°C
20
0
1 10
t [ms]
Fig. 3 I2t vs. time per diode
16
12
Ptot
8
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
4
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
0
0 2 4 6 8 10 12 0
IF(AV)M [A]
25 50 75 100 125 150 175
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
36
32
28
24
IF(AV)M 20
[A] 16
12
DC =
1
0.5
0.4
0.33
0.17
0.08
8
4
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
3.0
2.5
2.0
ZthJC
1.5
[K/W]
1.0
0.5
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 1.300
2 0.300
3 0.350
4 0.550
ti (s)
0.1015
0.1026
0.4919
0.6200
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b

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