LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors LDTC114EM3T5G Series
With Monolithic Bias Resistor Network S-LDTC114EM3T5G Series
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
3
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
2
which is designed for low power surface mount applications.
1
ƽSimplifies Circuit Design
ƽReduces Board Space
SOT-723
ƽReduces Component Count
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
ƽThese are Pb-Free Devices.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
PIN 1
BASE
(INPUT)
R1
R2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
50
50
100
Max
Vdc
Vdc
mAdc
Unit
MARKING DIAGRAM
3
XX M
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
PD
RθJA
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
480 (Note 1)
205 (Note 2)
mW
mW/°C
°C/W
12
xx = Specific Device Code
M = Date Code
Junction Temperature
TJ 150
°C
Storage Temperature Range
Tstg –55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Rev.O 1/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
S-LDTC114EM3T5G
S-LDTC124EM3T5G
S-LDTC144EM3T5G
S-LDTC114YM3T5G
S-LDTC114TM3T5G
S-LDTC143TM3T5G
S-LDTC123EM3T5G
S-LDTC143EM3T5G
S-LDTC143ZM3T5G
S-LDTC124XM3T5G
S-LDTC123JM3T5G
S-LDTC115EM3T5G
S-LDTC144WM3T5G
S-LDTC144TM3T5G
8A
8B
8C
8D
94
8F
8H
8J
8K
8L
8M
8N
8P
8T
R1 (K)
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
R2 (K)
10
22
47
47
2.2
4.7
47
47
47
100
22
Package
SOT−723
Shipping
8000/Tape & Reel
Rev.O 2/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
ICBO
ICEO
IEBO
− 100 nAdc
− 500 nAdc
− 0.5 mAdc
− 0.2
− 0.1
− 0.2
− 0.9
− 1.9
− 2.3
− 1.5
− 0.18
− 0.13
− 0.2
− 0.05
− 0.13
− 0.2
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 3)
V(BR)CBO
V(BR)CEO
50
50
− Vdc
− Vdc
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
LDTC114EM3T5G
hFE
35
60
LDTC124EM3T5G
60 100
LDTC144EM3T5G
80 140
LDTC114YM3T5G
80 140
LDTC114TM3T5G
160 350
LDTC143TM3T5G
160 350
LDTC123EM3T5G
8.0 15
LDTC143EM3T5G
15 30
LDTC143ZM3T5G
80 200
LDTC124XM3T5G
80 150
LDTC123JM3T5G
80 140
LDTC115EM3T5G
80 150
LDTC144WM3T5G
80 140
LDTC144TM3T5G
160 350
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
LDTC123EM3T5G
(IC = 10 mA, IB = 1 mA) LDTC143TM3T5G/LDTC114TM3T5G/
LDTC143EM3T5G/LDTC143ZM3T5G/
LDTC124XM3T5G/LDTC144TM3T5G
VCE(sat)
− 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC144EM3T5G
LDTC144TM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
VOL
Vdc
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
Rev.O 3/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS (Note 4)
Characteristic
Symbol
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
LDTC143TM3T5G
LDTC143ZM3T5G
LDTC114TM3T5G
LDTC144TM3T5G
VOH
Input Resistor
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
R1
Resistor Ratio
LDTC114EM3T5G/LDTC124EM3T5G/
LDTC144EM3T5G/LDTC115EM3T5G
LDTC114YM3T5G
LDTC143TM3T5G/LDTC114TM3T5G/LDTC144TM3T5G
LDTC123EM3T5G/LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC144WM3T5G
R1/R2
Input voltage (VCC = 5.0 V, I O= 100 mA)
Input voltage (VO = 0.3 V, I O = 5 mA)
LDTC123JM3T5G
LDTC123JM3T5G
VI(off)
VI(on)
Min
Min
4.9
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
32.9
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.1
Typ
Typ
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
1.0
0.21
1.0
0.1
0.47
0.047
2.1
Max
Max
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
61.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
0.5
Unit
Unit
Vdc
kW
V
V
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
300
250
200
150
100
50
0−50
RqJA = 480°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
Rev.O 4/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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1
IC/IB = 10
0.1
0.01
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EM3T5G
TA = −25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001 0
4
3
2
1
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
50 10 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100
75°C
10
25°C
TA = −25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
0.01
VO = 5 V
50 0.001 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
Rev.O 5/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC124EM3T5G
1
IC/IB = 10
0.1 TA = −25°C
0.01
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001
0
4
3
2
1
00
20 40 50 101
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100
10
1
75°C 25°C
TA = −25°C
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0.01
50 0.001 0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = −25°C
75°C 25°C
0.1 0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Rev.O 6/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC144EM3T5G
10
IC/IB = 10
1
0.1
1000
TA = −25°C
25°C
75°C
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.01
0
1
0.8
0.6
0.4
0.2
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
50 10 1
10
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100 25°C
75°C
10 TA = −25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
0.01
0.001
50 0
VO = 5 V
24 6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
10
TA = −25°C
25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
Rev.O 7/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114YM3T5G
1
IC/IB = 10
0.1
0.01
TA = −25°C
25°C
75°C
0.001 0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
80
300
VCE = 10
250
200
150
TA = 75°C
25°C
−25°C
100
50
01 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
4
3.5 f = 1 MHz
lE = 0 V
3 TA = 25°C
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
100
TA = 75°C
10
25°C
−25°C
VO = 5 V
1
0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = −25°C
25°C
75°C
0.1 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
Rev.O 8/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC143ZM3T5G
1
IC/IB = 10
0.1
75°C
TA = –25°C
0.01
25°C
1000
100
10
75°C
TA = –25°C
25°C
0.001
2
4
3.5
3
2.5
2
1.5
1
0.5
0
0
7 12 17 22 27
IC, COLLECTOR CURRENT (mA)
1
32 1
Figure 27. VCE(sat) vs. IC
f = 1 MHz
IE = 0 A
TA = 25°C
100
75°C
10
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 28. DC Current Gain
100
TA = –25°C
1
10 20 30 40 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 29. Output Capacitance
10
VO = 0.2 V
25°C
1
0.1
0.01
60 0
25°C
VO = 5 V
24
6
Vin, INPUT VOLTAGE (VOLTS)
8
Figure 30. Output Current vs. Input Voltage
TA = –25°C
75°C
0.1
0 6 12 18 24 30
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage vs. Output Current
Rev.O 9/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
FROM mP OR
OTHER LOGIC
ISOLATED
LOAD
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 23. Open Collector Inverter:
Inverts the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
Rev.O 10/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
PACKAGE DIMENSIONS
SOT−723
−X−
D
b1
−Y−
3
12
E
A
L HE
b 2X
e 0.08 (0.0032) X Y
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.45 0.50 0.55 0.018 0.020 0.022
b 0.15 0.20 0.27 0.0059 0.0079 0.0106
b1 0.25 0.3 0.35 0.010 0.012 0.014
C 0.07 0.12 0.17 0.0028 0.0047 0.0067
D 1.15 1.20 1.25 0.045 0.047 0.049
E 0.75 0.80 0.85 0.03 0.032 0.034
e 0.40 BSC
0.016 BSC
H E 1.15 1.20 1.25 0.045 0.047 0.049
L 0.15 0.20 0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
ǒ mm Ǔ
inches
Rev.O 11/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
Tape & Reel and Packaging Specifications for
Small-Signal Transistors, FETs and Diodes
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the “peel–back” cover tape.
• Two Reel Sizes Available (7"and 13",)
• SOT–23, SC–70/SOT–323,
• Used for Automatic Pick and Place Feed Systems
SC–89, SC–88/SOT–363, SC–88A/SOT–353,
• Minimizes Product Handling
SOD–323, SOD-523 in 8 mm Tape
• EIA 481, –1, –2
Use the standard device title and add the required suffix as listed in the option table below (Table 1). Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SOD-323
8mm
SC-59, SC-70, SC-75,SOT-23
8mm
SC-88, SOT-363
T1 Orientation
8mm
SC-88A, SOT-353
T1 Orientation
8mm
Direction of Feed
Typical Reel Orientations
Table 1. EMBOSSED TAPE AND REEL ORDERING INFORMATION
Package
SOT–23
SC–70/SOT–323
SC–89
SC–88/SOT-363
SC–88A/SOT-353
SOD-323
SOD-523
Tape Width
(mm)
Pitch
mm
84
8
84
8
84
8
84
8
84
8
84
8
84
8
Reel Size
mm(inch)
178
330
178
330
178
330
Devices Per Reel Device
and Minimum Suffix
Order Quantity
(7) 3,000 T1
(13) 10,000 T3
(7) 3,000 T1
(13) 10,000 T3
(7) 3,000 T1
(13) 10,000 T3
178 (7)
330 (13)
178 (7)
3,000 T1
10,000 T3
3,000 T1
330 (13)
178 (7)
330 (13)
10,000 T3
3,000 T1
10,000 T3
178 (7)
330 (13)
3,000 T1
10,000 T3
Rev.O 12/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
K
t
Top Cover
Tape
B1 K0
See
Note 1
10 Pitches Cumulative Tolerance on
P
0
Tape ± 0.2mm( ± 0.008’’ )
D P2
E
A
0
FW
B0
P
Embossment
Center Lines
of Cavity
D1
For Components
2.0mm x 1.2mm and Larger
For Machine Reference Only
Including Draft and RADII
Concentric Around B
0
User Direction of Feed
R Min
Bar Code Label
Tape and Components
Shall Pass Around
Radius “R”
Bending Radius Without Damage
10 o
Maximum Component Rotation
Embossed Carrier
100 mm
(3.937 ’’)
1 mm Max
Typical Component
Cavity Center Line
*Top Cover Tape
Thickness(t )
1
0.10mm
(0.004’’ )Max.
Embossment
Tape
Typical Component
Center Line
1 mm(.039’’ ) Max
250 mm
(9.843’’)
Camber (Top View)
Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
DIMENSIONS
Tape
Size B1 Max
D
4.55mm 1.5+0.1mm
8mm (.179’’) - 0.0
8.2mm (.059+.004’’
12mm (.323’’) - 0.0)
12.1mm
16mm (.476’’)
20.1mm
24mm (.791’’)
D1
1.0Min
(.039’’)
1.5mmMin
(.060’’)
E
1.75 ± 0.1mm
(.069±.004)
F
3.5 ± 0.05mm
(.138±.002’’)
5.5 ± 0.05mm
(.217±.002’’)
7.5 ± 0.10mm
(.295±.004’’)
11.5 ± 0.1mm
(.453±.004’’)
K P0
P2
2.4mmMax 4.0 ± 0.1mm
(.094’’) (.157±.004’’)
6.4mmMax
(.252’’)
7.9mmMax
(.311’’)
11.9mmMax
(.468’’)
2.0 ± 0.1mm
(.079±.002’’)
RMin TMax WMax
25mm 0.6mm
(.98’’) (.024’’)
30mm
(1.18’’)
8.3mm
(.327’’)
12 ± .30mm
(.470±.012’’)
16.3mm
(.642’’)
24.3mm
(.957’’)
Metric dimensions govern - English are in parentheses for reference only.
NOTE 1: A 0 , B 0 , and K 0 are determined by component size. The clearance between the components and the cavity must be within
.05 mm min. to.50 mm max.,
NOTE 2: the component cannot rotate more than 10 o within the determined cavity.
NOTE 3: If B1 exceeds 4.2 mm (.165”) for 8 mm embossed tape, the tape may not feed through all tape feeders.
Rev.O 13/14


LDTC143TM3T5G (LRC)
Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
13.0mm ± 0.5mm
1.5mm Min
(.512 ±.002’’)
(.06’’)
T Max
Outside Dimension
Measured at Edge
A 20.2mm Min
(.795’’)
50mm Min
(1.969’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
8 mm
12mm
16mm
24 mm
A Max
330mm
(12.992’’)
330mm
(12.992’’)
360mm
(14.173’’)
360mm
(14.173’’)
G
8.4mm+1.5mm, -0.0
(.33’’+.059’’, -0.00)
12.4mm+2.0mm, -0.0
(.49 ’’+ .079’’, -0.00)
16.4mm+2.0mm, -0.0
(.646’’+.078’’, -0.00)
24.4mm+2.0mm, -0.0
(.961’’+.070’’, -0.00)
T Max
14.4mm
(.56’’)
18.4mm
(.72’’)
22.4mm
(.882’’)
30.4mm
(1.197’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
Rev.O 14/14




LDTC143TM3T5G.pdf
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