2SC2216 (LGE)
NPN Transistor

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1. BASE
2. EMITTER
3. COLLECTOR
2SC2216(NPN)
TO-92 Bipolar Transistors
TO-92
Features
Amplifier dissipation NPN Silicon
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
50
45
4
50
300
125
-55-125
V
V
V
mA
mW
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Bass-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
IC= 100μA, IE=0
IC= 10 mA , IB=0
IE= 100μA, IC=0
VCB=50 V IE=0
VEB= 3 V, IC=0
VCE=12.5V, IC=12.5 mA
IC= 15mA, IB=1.5 mA
IC= 15mA, IB=1.5 mA
VCE=12.5 V, IC=12.5mA
VCB=10V,IE=0,
f=30MHz
50
45
4
40
300
V
V
V
0.1 μA
0.1 μA
140
0.2 V
1.5 V
MHz
2.0 pF


2SC2216 (LGE)
NPN Transistor

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Typical Characteristics
2SC2216(NPN)
TO-92 Bipolar Transistors




2SC2216.pdf
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