TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
Relay Drive, Motor Drive and DC−DC Converter
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 15 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 47 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain−gate voltage (RGS = 20 kΩ)
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Storage temperature range
−55 to 150
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal resistance, channel to case
Thermal resistance, channel to
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Electrical Characteristics (Ta = 25°C)
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Reverse transfer capacitance
V (BR) DSS
VGS = ±20 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 30 A
VGS = 10 V, ID = 30 A
VDS = 10 V, ID = 30 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Total gate charge (Gate−source
Gate−drain (“miller”) charge
Qgs VDD ≈ 80 V, VGS = 10 V, ID = 60 A
Source−Drain Ratings and Characteristics (Ta = 25°C)
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
IDR = 60 A, VGS = 0 V
IDR = 60 A, VGS = 0 V
dIDR / dt = 50 A / μs
Min Typ. Max Unit
— — ±100 nA
— — 100 μA
0.8 — 2.0
— 20 29
— 15 20
30 47 —
— 7000 —
— 400 —
— 2700 —
— 16 —
— 55 —
— 80 —
— 280 —
— 176 —
— 132 —
— 44 —
Min Typ. Max Unit
— — 60 A
— — 240 A
— — −1.6 V
— 300 —
— 0.75 —
Note 2: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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