NCE75H21 (NCE Power)
NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE75H21
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in Automotive applications and a wide variety of other
applications.
General Features
VDSS =75V,ID =210A
RDS(ON) < 4m@ VGS=10V
Schematic diagram
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21
NCE75H21
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Limit
75
±20
210
150
840
310
2.07
Unit
V
V
A
A
A
W
W/
Wuxi NCE Power Semiconductor Co., Ltd
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NCE N-Channel Enhancement Mode Power MOSFET

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NCE75H21
Single pulse avalanche energy (Note 4)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
2200
-55 To 175
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.48 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
75
V
1 μA
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
±200
nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
25
Drain-Source On-State Resistance
125
RDS(ON)
VGS=10V, ID=40A
2.8 4
4.7 6.5
m
m
Forward Transconductance
gFS
VDS=25V,ID=40A
100 165
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
11000
914
695
PF
PF
PF
Switching Characteristics
Turn-on Delay Time
td(on)
23 nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
190
130
nS
nS
Turn-Off Fall Time
tf
120 nS
Total Gate Charge
Gate-Source Charge
Qg - 250
Qgs ID=30A,VDD=30V,VGS=10V -
48
nC
nC
Gate-Drain Charge
Qgd
- 98
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD VGS=0V,IS=40A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = 40A
Qrr di/dt = 100A/μs(Note2)
63
98
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t 10 sec.
2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%.
3. EAS conditionTj=25,VDD=37.5V,VG=10V,L=2mH,Rg=25,IAS=37A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE75H21 (NCE Power)
NCE N-Channel Enhancement Mode Power MOSFET

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Test circuit
1EAS test Circuit
Pb Free Product
NCE75H21
2Gate charge test Circuit
3Switch Time Test Circuit
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NCE N-Channel Enhancement Mode Power MOSFET

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Typical Electrical and Thermal Characteristics
Pb Free Product
NCE75H21
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature()
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
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NCE N-Channel Enhancement Mode Power MOSFET

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NCE75H21
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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NCE75H21 (NCE Power)
NCE N-Channel Enhancement Mode Power MOSFET

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TO-220-3L Package Information
Pb Free Product
NCE75H21
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
H
h
L
L1
V
Φ
Dimensions In Millimeters
Min.
Max.
4.400
4.600
2.250
2.550
0.710
0.910
1.170
1.370
0.330
0.650
1.200
1.400
9.910
10.250
8.9500
9.750
12.650
12.950
2.540 TYP.
4.980
5.180
2.650
2.950
7.900
8.100
0.000
0.300
12.900
13.400
2.850
3.250
7.500 REF.
3.400
3.800
Wuxi NCE Power Semiconductor Co., Ltd
Page 6
Dimensions In Inches
Min.
Max.
0.173
0.181
0.089
0.100
0.028
0.036
0.046
0.054
0.013
0.026
0.047
0.055
0.390
0.404
0.352
0.384
0.498
0.510
0.100 TYP.
0.196
0.204
0.104
0.116
0.311
0.319
0.000
0.012
0.508
0.528
0.112
0.128
0.295 REF.
0.134
0.150
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NCE75H21 (NCE Power)
NCE N-Channel Enhancement Mode Power MOSFET

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NCE75H21
Attention:
Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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