IPD50N04S4-08 (Infineon)
Power Transistor

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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD50N04S4-08
Product Summary
V DS
R DS(on),max
ID
40 V
7.9 m
50 A
PG-TO252-3-313
Type
IPD50N04S4-08
Package
Marking
PG-TO252-3-313 4N0408
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=25A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
50
47
200
55
50
±20
46
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-13


IPD50N04S4-08 (Infineon)
Power Transistor

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IPD50N04S4-08
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
-
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 3.3 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=17µA
I DSS
V DS=40V, V GS=0V,
T j=25°C
V DS=18V, V GS=0V,
T j=85°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=50A
40 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 1 20
- - 100 nA
- 7.2 7.9 m
Rev. 1.0
page 2
2010-04-13


IPD50N04S4-08 (Infineon)
Power Transistor

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IPD50N04S4-08
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20V, V GS=10V,
I D=50A, R G=3.5
Q gs
Q gd
Qg
V plateau
V DD=32V, I D=50A,
V GS=0 to 10V
IS
I S,pulse
V SD
T C=25°C
V GS=0V, I F=50A,
T j=25°C
t rr
V R=20V, I F=50A,
di F/dt =100A/µs
min.
Values
typ.
Unit
max.
- 1370 1780 pF
- 350 455
- 10 23
- 5 - ns
-7-
-5-
-6-
- 8.0 10.4 nC
- 2.4 5.5
- 17.2 22.4
- 6.7 - V
- - 50 A
- - 200
- 0.9 1.3 V
- 34 - ns
Reverse recovery charge2)
Q rr
- 27 - nC
1) Current is limited by bondwire; with an R thJC = 3.3K/W the chip is able to carry 58A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2010-04-13


IPD50N04S4-08 (Infineon)
Power Transistor

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IPD50N04S4-08
1 Power dissipation
P tot = f(T C); V GS 6 V
2 Drain current
I D = f(T C); V GS 6 V
50 60
50
40
40
30
30
20
20
10
10
0
0 50 100
T C [°C]
3 Safe operating area
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
1000
150
0
200 0
50 100 150
T C [°C]
4 Max. transient thermal impedance
Z thJC = f(t p)
parameter: D =t p/T
101
100
10
1 µs
10 µs
100 µs
1 ms
100
10-1
0.5
0.1
0.05
0.01
single pulse
10-2
200
1
0.1
Rev. 1.0
1 10
V DS [V]
100
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2010-04-13


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Power Transistor

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IPD50N04S4-08
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
200
160
10 V
120
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
20
5.5 V
6V
18 6.5 V
16
7 V 14
80
6.5 V
12
7V
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
120
6 V 10
5.5 V
5V
8
10 V
6
34
0 10 20 30 40 50 60 70
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
14
13
100
12
80 11
60
40
20
0
3
175 °C
25 °C
-55 °C
456
V GS [V]
10
9
8
7
6
7
5
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-04-13


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Power Transistor

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9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
4
IPD50N04S4-08
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
3.5
3 85 µA
17 µA
2.5
2
103
102
Ciss
Coss
Crss
1.5
-60 -20 20 60 100 140 180
T j [°C]
101
0
5 10 15 20 25 30
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Avalanche characteristics
I A S= f(t AV)
parameter: Tj(start)
100
102
175 °C
175 °C
25 °C
101
25 °C
25 °C
100 °C
10
150 °C
1
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
0.1
1
Rev. 1.0
page 6
10 100
t AV [µs]
1000
2010-04-13


IPD50N04S4-08 (Infineon)
Power Transistor

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IPD50N04S4-08
13 Avalanche energy
E AS = f(T j)
parameter: I D
120
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
46
100 44
80 12.5 A
60
25 A
40
20
50 A
0
25 75 125
T j [°C]
15 Typ. gate charge
V GS = f(Q gate); I D = 50 A pulsed
parameter: V DD
10
9
8 8V
7 32 V
6
5
4
3
2
1
0
0 4 8 12 16
Q gate [nC]
42
40
38
36
175 -55 -15 25 65 105
T j [°C]
16 Gate charge waveforms
145
V GS
Qg
V g s(th)
Q g (th)
Q gs
20
Q sw
Q gd
Q gate
Rev. 1.0
page 7
2010-04-13


IPD50N04S4-08 (Infineon)
Power Transistor

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IPD50N04S4-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2010-04-13


IPD50N04S4-08 (Infineon)
Power Transistor

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Revision History
Version
Revision 1.0
Date
IPD50N04S4-08
Changes
13.04.2010 Final Data Sheet
Rev. 1.0
page 9
2010-04-13




IPD50N04S4-08.pdf
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