MXP1008AT (MaxPower Semiconductor)
100V N-Channel MOSFET

No Preview Available !

Click to Download PDF File for PC

100V N-Channel MOSFET
Applications:
Uninterruptible Power Supply
High Speed Power Switching
High Efficiency Synchronous Rectification in SMPS
Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Charge for Fast Switching Application
Optimized V(BR)DSS Ruggedness
VDS
100V
MXP1008AT
RDS(ON)(MAX)
8mΩ
ID
115A
Ordering Information
Park Number
Package
MXP1008AT
TO220
Brand
MXP
TO220 Pin Definition and Inner Circuit
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS Drain-to-Source Voltage
100
ID Continuous Drain Current
Silicon Limited
Package Limited
115
80
IDM Pulsed Drain Current @VGS=10V
459
PD Power Dissipation
242
VGS Gate-to-Source Voltage
+/-20
TJ and Tstg Operating Junction and Storage Temperature Range
-55 to 175
Unit
V
A
W
V
Avalanche Characteristics
Symbol
Parameter
EAS
Single Pulse Avalanche Energy
(VDS=50V, VGS=10V, Rg=25, L=1mH)
IAS Single Pulse Avalanche Current
TC=25unless otherwise specified
Value
200
Figure 9
Unit
mJ
A
Thermal Resistance
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Max Unit
0.62 /W
62 /W
: Guarantee number.
©MaxPower Semiconductor Inc.
Page1
MXP1008AT Preliminary Jun. 2013


MXP1008AT (MaxPower Semiconductor)
100V N-Channel MOSFET

No Preview Available !

Click to Download PDF File for PC

100V N-Channel MOSFET
MXP1008AT
OFF Characteristics
Symbol
Parameter
TJ=25unless otherwise specified
Min Typ Max Unit
V(BR)DSS Drain-to-Source Breakdown Voltage 100
-
-V
IDSS Drain-to-Source Leakage Current
-
-
-
-
1
100
uA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-
-
-
-
100
100
nA
Test Conditions
VGS=0V, ID=250uA
VDS=80V, VGS=0V
VDS=80V, VGS=0V, TJ=125
VGS=+20V
VGS= -20V
ON Characteristics
Symbol
Parameter
TJ=25unless otherwise specified
Min Typ Max Unit
RDS(ON) Static Drain-to-Source On-Resistance
-
6.3 8.0 m
VGS(th) Gate Threshold Voltage
2.5 - 4.5 V
Test Conditions
VGS=10V, ID=69A
VGS=VDS, ID=250uA
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
TJ=25unless otherwise specified
Min Typ Max Unit
- 9315
-
- 536
- pF
- 204
-
- 110
-
- 40
- nC
- 31
-
- 51
-
- 130
- 107
-
-
ns
- 51
-
Test Conditions
VGS=0V, VDS=25V,
f=1.0MHz
VDD=50V, ID=69A, VGS=10V
VDD=50V, ID=35A, VGS=10V
RG=10, RL=1.4
Source-Drain Diode Characteristics
Symbol
Parameter
VSD Diode Forward Voltage
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
TJ=25unless otherwise specified
Min Typ Max Unit
- - 1.2 V
- 86.8
- ns
- 229.3 - nC
Test Conditions
IS=69A, VGS=0V
Is=69A, di/dt=100A/μs
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page2
All Rights Reserved.
MXP1008AT Preliminary Jun. 2013


MXP1008AT (MaxPower Semiconductor)
100V N-Channel MOSFET

No Preview Available !

Click to Download PDF File for PC

100V N-Channel MOSFET
MXP1008AT
1. Power Dissipation
2. Drain Current
300.0
250.0
200.0
150.0
100.0
50.0
0.0
0
25 50 75 100 125 150 175
TC, Case Temperature()
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC, Case Temperature()
3. Output Characteristics TC=25oC
4. Drain-to-Source Breakdown Voltage
200
180
160
140
120
100
80
60
40
20
0
0.0
VGS=10V
VGS=7.25V
VGS=7V
VGS=6.75V
VGS=6.5V
1.0 2.0 3.0 4.0 5.0
VDS, Drain-to-Source Voltage(V)
1.13
ID=5mA
1.08
1.03
0.98
0.93
0.88
-60 -20 20 60 100 140 180
TJ, Junction Temperature()
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page3
All Rights Reserved.
MXP1008AT Preliminary Jun. 2013


MXP1008AT (MaxPower Semiconductor)
100V N-Channel MOSFET

No Preview Available !

Click to Download PDF File for PC

100V N-Channel MOSFET
MXP1008AT
5. Gate Threshold Voltage
6. Drain-to-Source On-Resistance
1.40
1.20
1.00
0.80
0.60
0.40
0.20
-60 -20 20 60 100 140 180
TJ, Junction Temperature()
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
-60 -20 20 60 100 140 180
TJ, Junction Temperature()
7. Typ. Gate Charge
8. Typ. Capacitance
10
9
8
7
6
5
4
3
2
1
0
0
20 40 60 80 100 120
Qg, Gate Charge(nC)
100000
10000
Ciss
1000 Coss
100
Crss
10
1
0 20 40 60 80 100
VDS, Drain Voltage(V)
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page4
All Rights Reserved.
MXP1008AT Preliminary Jun. 2013


MXP1008AT (MaxPower Semiconductor)
100V N-Channel MOSFET

No Preview Available !

Click to Download PDF File for PC

100V N-Channel MOSFET
9. Avalance Characteristics
1000
MXP1008AT
10. Forward Characteristics of reverse diode
100
100 10
10
1
1.E-05
Starting TJ=25
1.E-04 1.E-03 1.E-02 1.E-01
tAV, Pulsewidth(s)
1 TJ=175
TJ=25
VGS=0
0
0.00 0.20 0.40 0.60 0.80 1.00
VSD, Diode Forward Voltage(V)
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page5
All Rights Reserved.
MXP1008AT Preliminary Jun. 2013


MXP1008AT (MaxPower Semiconductor)
100V N-Channel MOSFET

No Preview Available !

Click to Download PDF File for PC

TO220
1. Outline Dimension
MXP1008AT
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page6
UNIT : mm
All Rights Reserved.
MXP1008AT Preliminary Jun. 2013


MXP1008AT (MaxPower Semiconductor)
100V N-Channel MOSFET

No Preview Available !

Click to Download PDF File for PC

Disclaimers:
MaxPower Semiconductor Inc. (MXP) reserves the right to make changes without notice in order to
improve reliability, function or design and to discontinue any product or service without notice.
Customers should obtain the latest relevant information before orders and should verify that such
information is current and complete. All products are sold subject to MXP's terms and conditions
supplied at the time of order acknowledgement.
MaxPower Semiconductor Inc., its affiliates, agents, and employees, and all persons acting on its or their
behalf, disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or
in any other disclosure relating to any product.
MaxPower Semiconductor Inc. disclaims any and all liability arising out of the use or application of any
product described herein or of any information provided herein to the maximum extent permitted by
law. The product specifications do not expand or otherwise modify MXP's terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
MaxPower Semiconductor Inc. warrants performance of its hardware products to the specifications at
the time of sale, testing, reliability and quality control are used to the extent MXP deems necessary to
support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of
each product is not necessarily performed.
MaxPower Semiconductor Inc. does not assume any liability arising from the use of any product or
circuit designs described herein. Customers are responsible for their products and applications using
MXP's components. To minimize risk, customers must provide adequate design and operating
safeguards.
MaxPower Semiconductor Inc. does not warrant or convey any license to any intellectual property rights
either expressed or implied under its patent rights, nor the rights of others. Reproduction of information
in MXP's data sheets or data books is permissible only if reproduction is without modification or
alteration. Reproduction of this information with any alteration is an unfair and deceptive business
practice.
MaxPower Semiconductor Inc. is not responsible or liable for such altered documentation. Resale of
MXP's products with statements different from or beyond the parameters stated by MaxPower
Semiconductor Inc. for that product or service voids all express or implied warrantees for the associated
MXP product or service and is an unfair and deceptive business practice. MaxPower Semiconductor Inc.
is not responsible or liable for any such statements.
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page7
All Rights Reserved.
MXP1008AT Preliminary Jun. 2013




MXP1008AT.pdf
Click to Download PDF File