TH72011 (Melexis)
FSK Transmitter

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TH72011
433MHz
FSK Transmitter
Features
! Fully integrated PLL-stabilized VCO
! Frequency range from 380 MHz to 450 MHz
! Single-ended RF output
! FSK through crystal pulling allows modulation
from DC to 40 kbit/s
! High FSK deviation possible for wideband data
transmission
! Wide power supply range from 1.95 V to 5.5 V
! Very low standby current
! On-chip low voltage detector
! High over-all frequency accuracy
! FSK deviation and center frequency independ-
ently adjustable
! Adjustable output power range from
-12 dBm to +10 dBm
! Adjustable current consumption from
3.4 mA to 10.6 mA
! Conforms to EN 300 220 and similar standards
! 8-pin Small Outline Integrated Circuit (SOIC)
Ordering Information
Part Number
Temperature Code
TH72011
K (-40°C to 125°C)
Package Code
DC (SOIC8)
Delivery Form
98 pc/tube
2500 pc/T&R
Application Examples
! General digital data transmission
! Tire Pressure Monitoring Systems (TPMS)
! Remote Keyless Entry (RKE)
! Wireless access control
! Alarm and security systems
! Garage door openers
! Remote Controls
! Home and building automation
! Low-power telemetry systems
Pin Description
FSKDTA 1
FSKSW 2
ROI 3
ENTX 4
TH72011
8 VEE
7 OUT
6 VCC
5 PSEL
General Description
The TH72011 FSK transmitter IC is designed for applications in the European 433 MHz industrial-scientific-
medical (ISM) band, according to the EN 300 220 telecommunications standard; but it can also be used in
other countries with similar standards, e.g. FCC part 15.231.
The transmitter's carrier frequency fc is determined by the frequency of the reference crystal fref. The inte-
grated PLL synthesizer ensures that carrier frequencies, ranging from 380 MHz to 450 MHz, can be
achieved. This is done by using a crystal with a reference frequency according to: fref = fc/N, where N = 32 is
the PLL feedback divider ratio.
39010 72011
Rev. 008
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Data Sheet
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
Document Content
1 Theory of Operation ...................................................................................................3
1.1 General............................................................................................................................. 3
1.2 Block Diagram .................................................................................................................. 3
2 Functional Description ..............................................................................................4
2.1 Crystal Oscillator .............................................................................................................. 4
2.2 FSK Modulation ................................................................................................................ 4
2.3 Crystal Pulling................................................................................................................... 4
2.4 Output Power Selection.................................................................................................... 5
2.5 Lock Detection.................................................................................................................. 5
2.6 Low Voltage Detection...................................................................................................... 5
2.7 Mode Control Logic .......................................................................................................... 6
2.8 Timing Diagrams .............................................................................................................. 6
3 Pin Definition and Description ..................................................................................7
4 Electrical Characteristics ..........................................................................................8
4.1 Absolute Maximum Ratings .............................................................................................. 8
4.2 Normal Operating Conditions ........................................................................................... 8
4.3 Crystal Parameters ........................................................................................................... 8
4.4 DC Characteristics............................................................................................................ 9
4.5 AC Characteristics .......................................................................................................... 10
4.6 Output Power Steps ....................................................................................................... 10
5 Typical Operating Characteristics ..........................................................................11
5.1 DC Characteristics.......................................................................................................... 11
5.2 AC Characteristics .......................................................................................................... 14
6 Test Circuit ...............................................................................................................17
6.1 Test circuit component list to Fig. 18 .............................................................................. 17
7 Package Description ................................................................................................18
7.1 Soldering Information ..................................................................................................... 18
8 Reliability Information..............................................................................................19
9 ESD Precautions ......................................................................................................19
10 Disclaimer .................................................................................................................20
39010 72011
Rev. 008
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Data Sheet
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
1 Theory of Operation
1.1 General
As depicted in Fig.1, the TH72011 transmitter consists of a fully integrated voltage-controlled oscillator
(VCO), a divide-by-32 divider (div32), a phase-frequency detector (PFD) and a charge pump (CP). An inter-
nal loop filter determines the dynamic behavior of the PLL and suppresses reference spurious signals. A
Colpitts crystal oscillator (XOSC) is used as the reference oscillator of a phase-locked loop (PLL) synthe-
sizer. The VCO’s output signal feeds the power amplifier (PA). The RF signal power Pout can be adjusted in
four steps from Pout = –12 dBm to +10 dBm, either by changing the value of resistor RPS or by varying the
voltage VPS at pin PSEL. The open-collector output (OUT) can be used either to directly drive a loop antenna
or to be matched to a 50Ohm load. Bandgap biasing ensures stable operation of the IC at a power supply
range of 1.95 V to 5.5 V.
1.2 Block Diagram
4
ENTX
mode
control
PLL
VCC
6
32
ROI 3
XTAL
XOSC
FSKSW 2
CX2
CX1
1
FSKDTA
XBUF
8
VEE
PFD
CP
VCO
RPS
PSEL
5
PA
low
voltage
detector
7 OUT
antenna
matching
network
Fig. 1: Block diagram with external components
39010 72011
Rev. 008
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Data Sheet
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
2 Functional Description
2.1 Crystal Oscillator
A Colpitts crystal oscillator with integrated functional capacitors is used as the reference oscillator for the PLL
synthesizer. The equivalent input capacitance CRO offered by the crystal oscillator input pin ROI is about
18pF. The crystal oscillator is provided with an amplitude control loop in order to have a very stable fre-
quency over the specified supply voltage and temperature range in combination with a short start-up time.
2.2 FSK Modulation
FSK modulation can be achieved by pulling the
crystal oscillator frequency. A CMOS-
compatible data stream applied at the pin
FSKDTA digitally modulates the XOSC via an
integrated NMOS switch. Two external pulling
capacitors CX1 and CX2 allow the FSK devia-
tion Δf and the center frequency fc to be ad-
justed independently. At FSKDTA = 0, CX2 is
connected in parallel to CX1 leading to the low-
frequency component of the FSK spectrum
(fmin); while at FSKDTA = 1, CX2 is deactivated
and the XOSC is set to its high frequency fmax.
An external reference signal can be directly AC-
coupled to the reference oscillator input pin
ROI. Then the transmitter is used without a
crystal. Now the reference signal sets the car-
rier frequency and may also contain the FSK (or
FM) modulation.
Fig. 2: Crystal pulling circuitry
VCC
ROI
XTAL
FSKSW
CX2
CX1
VEE
FSKDTA
0
1
Description
fmin= fc - Δf (FSK switch is closed)
fmax= fc + Δf (FSK switch is open)
2.3 Crystal Pulling
A crystal is tuned by the manufacturer to the
required oscillation frequency f0 at a given load
capacitance CL and within the specified calibra-
tion tolerance. The only way to pull the oscilla-
tion frequency is to vary the effective load ca-
pacitance CLeff seen by the crystal.
Figure 3 shows the oscillation frequency of a
crystal as a function of the effective load ca-
pacitance. This capacitance changes in accor-
dance with the logic level of FSKDTA around
the specified load capacitance. The figure illus-
trates the relationship between the external
pulling capacitors and the frequency deviation.
It can also be seen that the pulling sensitivity
increases with the reduction of CL. Therefore,
applications with a high frequency deviation
require a low load capacitance. For narrow
band FSK applications, a higher load capaci-
tance could be chosen in order to reduce the
frequency drift caused by the tolerances of the
chip and the external pulling capacitors.
f
f max
fc
f min
XTAL
L1
C1
R1
CX1 CRO CL
CX1+CRO
(CX1+CX2) CRO
CX1+CX2+CRO
Fig. 3: Crystal pulling characteristic
C0
CL eff
CL eff
39010 72011
Rev. 008
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Data Sheet
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
2.4 Output Power Selection
The transmitter is provided with an output power selection feature. There are four predefined output power
steps and one off-step accessible via the power selection pin PSEL. A digital power step adjustment was
chosen because of its high accuracy and stability. The number of steps and the step sizes as well as the
corresponding power levels are selected to cover a wide spectrum of different applications.
The implementation of the output power control
logic is shown in figure 4. There are two
matched current sources with an amount of
about 8 µA. One current source is directly ap-
plied to the PSEL pin. The other current source
is used for the generation of reference voltages
with a resistor ladder. These reference voltages
are defining the thresholds between the power
steps. The four comparators deliver thermome-
ter-coded control signals depending on the
voltage level at the pin PSEL. In order to have a
certain amount of ripple tolerance in a noisy
environment the comparators are provided with
a little hysteresis of about 20 mV. With these
control signals, weighted current sources of the
power amplifier are switched on or off to set the
desired output power level (Digitally Controlled
Current Source). The LOCK signal and the
output of the low voltage detector are gating
this current source.
RPS
PSEL
&
&&
&
&
OUT
Fig. 4: Block diagram of output power control circuitry
There are two ways to select the desired output power step. First by applying a DC voltage at the pin PSEL,
then this voltage directly selects the desired output power step. This kind of power selection can be used if
the transmission power must be changed during operation. For a fixed-power application a resistor can be
used which is connected from the PSEL pin to ground. The voltage drop across this resistor selects the de-
sired output power level. For fixed-power applications at the highest power step this resistor can be omitted.
The pin PSEL is in a high impedance state during the “TX standby” mode.
2.5 Lock Detection
The lock detection circuitry turns on the power amplifier only after PLL lock. This prevents from unwanted
emission of the transmitter if the PLL is unlocked.
2.6 Low Voltage Detection
The supply voltage is sensed by a low voltage detect circuitry. The power amplifier is turned off if the supply
voltage drops below a value of about 1.85 V. This is done in order to prevent unwanted emission of the
transmitter if the supply voltage is too low.
39010 72011
Rev. 008
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Data Sheet
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FSK Transmitter

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2.7 Mode Control Logic
The mode control logic allows two different
modes of operation as listed in the following
table. The mode control pin ENTX is pulled-
down internally. This guarantees that the whole
circuit is shut down if this pin is left floating.
ENTX
0
1
TH72011
433MHz
FSK Transmitter
Mode
TX standby
TX active
Description
TX disabled
TX enable
2.8 Timing Diagrams
After enabling the transmitter by the ENTX signal, the power amplifier remains inactive for the time ton, the
transmitter start-up time. The crystal oscillator starts oscillation and the PLL locks to the desired output fre-
quency within the time duration ton. After successful PLL lock, the LOCK signal turns on the power amplifier,
and then the RF carrier can be FSK modulated.
high
ENTX
low
high
LOCK
low
high
FSKDTA
low
RF carrier
t
t on
Fig. 5: Timing diagram for FSK modulation
39010 72011
Rev. 008
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Data Sheet
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FSK Transmitter

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3 Pin Definition and Description
Pin No. Name
1 FSKDTA
I/O Type
input
Functional Schematic
0: ENTX=1
1: ENTX=0
FSKDTA
1
1.5kΩ
2 FSKSW
analog I/O
FSKSW
2
3 ROI
4 ENTX
analog I/O
ROI
3
25k
36p
36p
input
ENTX
4
1.5kΩ
TH72011
433MHz
FSK Transmitter
Description
FSK data input,
CMOS compatible with op-
eration mode dependent
pull-up circuit
TX standby: no pull-up
TX active: pull-up
XOSC FSK pulling pin,
MOS switch
XOSC connection to XTAL,
Colpitts type crystal oscilla-
tor
mode control input,
CMOS-compatible with in-
ternal pull-down circuit
5 PSEL
6 VCC
7 OUT
analog I/O
supply
output
PSEL
5
1.5kΩ
OUT
7
power select input, high-
impedance comparator logic
IPSEL
TX standby: IPSEL = 0
TX active: IPSEL = 8µA
positive power supply
VCC power amplifier output,
open collector
8 VEE
ground
VEE
VEE
negative power supply
39010 72011
Rev. 008
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Data Sheet
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
4 Electrical Characteristics
4.1 Absolute Maximum Ratings
Parameter
Supply voltage
Input voltage
Storage temperature
Junction temperature
Thermal Resistance
Power dissipation
Electrostatic discharge
Symbol
Condition
VCC
VIN
TSTG
TJ
RthJA
Pdiss
VESD
human body model (HBM)
according to CDF-AEC-
Q100-002
Min
0
-0.3
-65
±2.0
Max
7.0
VCC+0.3
150
150
163
0.12
Unit
V
V
°C
°C
K/W
W
kV
4.2 Normal Operating Conditions
Parameter
Supply voltage
Operating temperature
Input low voltage CMOS
Input high voltage CMOS
XOSC frequency
VCO frequency
FSK deviation
Data rate
Symbol
Condition
VCC
TA
VIL ENTX, FSKDTA pins
VIH ENTX, FSKDTA pins
fref set by the crystal
fc fc = 32 fref
Δf depending on CX1, CX2
and crystal parameters
R NRZ
Min
1.95
-40
0.7*VCC
11.9
380
±2.5
Max
5.5
125
0.3*VCC
14
450
±40
40
Unit
V
°C
V
V
MHz
MHz
kHz
kbit/s
4.3 Crystal Parameters
Parameter
Crystal frequency
Load capacitance
Static capacitance
Series resistance
Spurious response
Symbol
Condition
f0
CL
C0
R1
aspur
fundamental mode, AT
Min Max Unit
11.9 14 MHz
10 15 pF
7 pF
70 Ω
-10 dB
39010 72011
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
4.4 DC Characteristics
all parameters under normal operating conditions, unless otherwise stated;
typical values at TA = 23 °C and VCC = 3 V
Parameter
Symbol
Condition
Min
Operating Currents
Standby current
Supply current in power step 0
Supply current in power step 1
Supply current in power step 2
Supply current in power step 3
Supply current in power step 4
Digital Pin Characteristics
ISBY ENTX=0, TA=85°C
ENTX=0, TA=125°C
ICC0 ENTX=1
ICC1 ENTX=1
ICC2 ENTX=1
ICC3 ENTX=1
ICC4 ENTX=1
1.5
2.1
3.0
4.5
7.3
Input low voltage CMOS
Input high voltage CMOS
Pull down current
ENTX pin
VIL
VIH
IPDEN
ENTX, FSKDTA pins
ENTX, FSKDTA pins
ENTX=1
-0.3
0.7*VCC
0.2
Low level input current
ENTX pin
IINLEN ENTX=0
High level input current
FSKDTA pin
IINHDTA FSKDTA=1
Pull up current
FSKDTA pin active
IPUDTAa FSKDTA=0
ENTX=1
0.1
Pull up current
FSKDTA pin standby
IPUDTAs FSKDTA=0
ENTX=0
FSK Switch Resistance
MOS switch On resistance
RON FSKDTA=0
ENTX=1
MOS switch Off resistance
ROFF FSKDTA=1
ENTX=1
1
Power Select Characteristics
Power select current
IPSEL
Power select voltage step 0
VPS0
Power select voltage step 1
VPS1
Power select voltage step 2
VPS2
Power select voltage step 3
VPS3
Power select voltage step 4
VPS4
Low Voltage Detection Characteristic
ENTX=1
ENTX=1
ENTX=1
ENTX=1
ENTX=1
ENTX=1
7.0
0.14
0.37
0.78
1.55
Low voltage detect threshold
VLVD ENTX=1
1.75
Typ
0.2
2.5
3.4
4.6
6.5
10.6
2.0
1.5
20
8.6
1.85
Max
200
4
3.8
4.9
6.2
8.5
13.3
0.3*Vcc
VCC+0.3
20
0.02
0.02
12
0.02
70
9.9
0.035
0.24
0.60
1.29
1.95
Unit
nA
µA
mA
mA
mA
mA
mA
V
V
µA
µA
µA
µA
µA
Ω
MΩ
µA
V
V
V
V
V
V
39010 72011
Rev. 008
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Data Sheet
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
4.5 AC Characteristics
all parameters under normal operating conditions, unless otherwise stated;
typical values at TA = 23 °C and VCC = 3 V; test circuit shown in Fig. 18, fc = 433.92 MHz
Parameter
Symbol
Condition
Min Typ Max
CW Spectrum Characteristics
Output power in step 0
(Isolation in off-state)
Output power in step 1
Output power in step 2
Output power in step 3
Output power in step 4
Phase noise
Spurious emissions according
to EN 300 220-1 (2000.09)
table 13
Poff ENTX=1
P1
P2
P3
P4
L(fm)
Pspur
ENTX=1
ENTX=1
ENTX=1
ENTX=1
@ 200kHz offset
47MHz< f <74MHz
87.5MHz< f <118MHz
174MHz< f <230MHz
470MHz< f <862MHz
B=100kHz
-13
-3.5
2
4.5
-70
-12 -10 1)
-3 -1.5 1)
3 4.5 1)
8 10 1)
-88 -83
-54
f < 1GHz, B=100kHz
-36
f > 1GHz, B=1MHz
-30
Start-up Parameters
Start-up time
ton from standby to
transmit mode
0.8 1.2
Frequency Stability
Frequency stability vs. supply
voltage
dfVCC
±3
Frequency stability vs. tem-
perature
dfTA crystal at constant
temperature
±10
Frequency stability vs. varia-
tion range of CRO
dfCRO
±20
1) output matching network tuned for 5V supply
Unit
dBm
dBm
dBm
dBm
dBm
dBc/Hz
dBm
dBm
dBm
ms
ppm
ppm
ppm
4.6 Output Power Steps
Power step
RPS / kΩ
0
<3
1
22
234
56 120 not connected
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FSK Transmitter

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5 Typical Operating Characteristics
5.1 DC Characteristics
I SBY
5µA
4µA
3µA
2µA
1µA
200nA
Standby current
150nA
100nA
50nA
0
2.0 2.5 3.0 3.5 4.0 4.5
Vcc [V]
Fig. 6: Standby current limits
TH72011
433MHz
FSK Transmitter
125°C
85°C
25°C
5.0 5.5
6.0
power step 0
3.4
125°C
3.0 105°C
85°C
2.6 25°C
0°C
-20°C
2.2
-40°C
1.8
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 7: Supply current in power step 0
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TH72011
433MHz
FSK Transmitter
power step 1
4.2
125°C
105°C
3.9 85°C
3.6
25°C
3.3 0°C
-20°C
3.0
-40°C
2.7
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 8: Supply current in power step 1
power step 2
5.4
125°C
105°C
5.0 85°C
4.6 25°C
0°C
4.2 -20°C
-40°C
3.8
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 9: Supply current in power step 2
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
power step 3
7.3 125°C
105°C
7.0 85°C
6.7
25°C
6.4
0°C
6.1
-20°C
5.8
-40°C
5.5
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 10: Supply current in power step 3
12.0
11.5
11.0
10.5
10.0
9.5
power step 4
125°C
105°C
85°C
25°C
0°C
-20°C
-40°C
9.0
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 11: Supply current in power step 4
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FSK Transmitter

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5.2 AC Characteristics
Data according to test circuit in Fig. 18
TH72011
433MHz
FSK Transmitter
-11.5
-12.0
-12.5
-13.0
power step 1
25°C
85°C
125°C
-40°C
-13.5
-14.0
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 12: Output power in step 1
power step 2
-1.0
-2.0
25°C
85°C
-3.0
125°C
-40°C
-4.0
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 13: Output power in step 2
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
power step 3
5.0
4.0
3.0
25°C
85°C
2.0
125°C
-40°C
1.0
0
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 14: Output power in step 3
power step 4
12.0
10.0
25°C
8.0
85°C
125°C
6.0 -40°C
4.0
2.0
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Vcc [V]
Fig. 15: Output power in step 4
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FSK Transmitter

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TH72011
433MHz
FSK Transmitter
Fig. 16: RF output signal with PLL reference spurs
39010 72011
Rev. 008
Fig. 17: Single sideband phase noise
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FSK Transmitter

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6 Test Circuit
OUT
CM2
CM1
LM CM3
LT
87
CB1
RPS
65
TH72011
433MHz
FSK Transmitter
CX2
XTAL
CX1
12 3
CB0
12 3 12
Fig. 18: Test circuit for FSK with 50 Ω matching network
6.1 Test circuit component list to Fig. 18
Part Size
CM1
CM2
CM3
LM
LT
CX1
CX2
RPS
CB0
CB1
XTAL
0805
0805
0805
0805
0805
0805
0805
0805
1206
0805
HC49/S
Value @
433.92 MHz
5.6 pF
10 pF
82 pF
33 nH
33 nH
12 pF
33 pF
see section 4.6
220 nF
330 pF
13.56000 MHz
Tolerance
Description
±5%
±5%
±5%
±5%
±5%
±5%
±5%
±5%
±20%
±10%
±30ppm calibr.
±30ppm temp.
impedance matching capacitor
impedance matching capacitor
impedance matching capacitor
impedance matching inductor, note 2
output tank inductor, note 2
XOSC capacitor (Δf = ±28 kHz), note 1
XOSC capacitor (Δf = ±28 kHz), note 1
power-select resistor
de-coupling capacitor
de-coupling capacitor
fundamental wave crystal,
CL = 12 pF, C0, max = 7 pF, R1 = 60 Ω
Note 1: value depending on crystal parameters
Note 2: for high-power applications high-Q wire-wound inductors should be used
39010 72011
Rev. 008
Page 17 of 20
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7 Package Description
The device TH72011 is RoHS compliant.
D
e ZD
8
TH72011
433MHz
FSK Transmitter
1
B
DETAIL - A
L
BSC(00..03185xx4455°°)
DETAIL - A
.10 (.004)
C
Fig. 19: SOIC8
all Dimension in mm, coplanarity < 0.1mm
D E H A A1 A2 e B ZD C L
min 4.80 3.81 5.80 1.52 0.10 1.37 0.36 0.19 0.41
1.27 0.53
max 4.98 3.99 6.20 1.72 0.25 1.57 0.46 0.25 1.27
all Dimension in inch, coplanarity < 0.004”
min 0.189 0.150 0.2284 0.060 0.0040 0.054
0.014
0.075 0.016
0.050
0.021
max 0.196 0.157 0.2440 0.068 0.0098 0.062
0.018
0.098 0.050
α
7.1 Soldering Information
The device TH72011 is qualified for MSL3 with soldering peak temperature 260 deg C
according to JEDEC J-STD-20.
39010 72011
Rev. 008
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FSK Transmitter
8 Reliability Information
This Melexis device is classified and qualified regarding soldering technology, solderability and moisture
sensitivity level, as defined in this specification, according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
IPC/JEDEC J-STD-020
“Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classifi-
cation reflow profiles according to table 5-2)”
EIA/JEDEC JESD22-A113
“Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles ac-
cording to table 2)”
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EN60749-20
“Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat”
EIA/JEDEC JESD22-B106 and EN60749-15
“Resistance to soldering temperature for through-hole mounted devices”
Iron Soldering THD’s (Through Hole Devices)
EN60749-15
“Resistance to soldering temperature for through-hole mounted devices”
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EIA/JEDEC JESD22-B102 and EN60749-21
“Solderability”
For all soldering technologies deviating from above mentioned standard conditions (regarding peak tempera-
ture, temperature gradient, temperature profile etc) additional classification and qualification tests have to be
agreed upon with Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of
adhesive strength between device and board.
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more in-
formation on qualification of RoHS compliant products (RoHS = European directive on the Restriction Of the
Use of Certain Hazardous Substances) please visit the quality page on our website:
http://www.melexis.com/quality_leadfree.aspx
9 ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
39010 72011
Rev. 008
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June /07


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FSK Transmitter
10 Disclaimer
1) The information included in this documentation is subject to Melexis intellectual and other property rights.
Reproduction of information is permissible only if the information will not be altered and is accompanied
by all associated conditions, limitations and notices.
2) Any use of the documentation without the prior written consent of Melexis other than the one set forth in
clause 1 is an unfair and deceptive business practice. Melexis is not responsible or liable for such altered
documentation.
3) The information furnished by Melexis in this documentation is provided ’as is’. Except as expressly war-
ranted in any other applicable license agreement, Melexis disclaims all warranties either express, im-
plied, statutory or otherwise including but not limited to the merchantability, fitness for a particular pur-
pose, title and non-infringement with regard to the content of this documentation.
4) Notwithstanding the fact that Melexis endeavors to take care of the concept and content of this docu-
mentation, it may include technical or factual inaccuracies or typographical errors. Melexis disclaims any
responsibility in connection herewith.
5) Melexis reserves the right to change the documentation, the specifications and prices at any time and
without notice. Therefore, prior to designing this product into a system, it is necessary to check with
Melexis for current information.
6) Melexis shall not be liable to recipient or any third party for any damages, including but not limited to
personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special in-
cidental or consequential damages, of any kind, in connection with or arising out of the furnishing, per-
formance or use of the information in this documentation.
7) The product described in this documentation is intended for use in normal commercial applications. Ap-
plications requiring operation beyond ranges specified in this documentation, unusual environmental re-
quirements, or high reliability applications, such as military, medical life-support or life-sustaining equip-
ment are specifically not recommended without additional processing by Melexis for each application.
8) Any supply of products by Melexis will be governed by the Melexis Terms of Sale, published on
www.melexis.com.
© Melexis NV. All rights reserved.
For the latest version of this document, go to our website at:
www.melexis.com
Or for additional information contact Melexis Direct:
Europe, Asia:
Phone: +32 1367 0495
E-mail: sales_europe@melexis.com
Americas:
Phone: +1 603 223 2362
E-mail: sales_usa@melexis.com
Asia:
Phone: +32 1367 0495
E-mail: sales_asia@melexis.com
39010 72011
Rev. 008
ISO/TS 16949 and ISO14001 Certified
Page 20 of 20
Data Sheet
June /07




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