3DD13001B (JCST)
TO-92 Plastic-Encapsulate Transistors

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001B TRANSISTOR (NPN)
FEATURE
· power switching applications
TO-92
1. BASE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector -Base Voltage
600 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current -Continuous
0.2 A
PC Collector Power Dissipation
0.75 W
TJ Junction Temperature
150
Tstg Storage Temperature
-55~150
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
tf
tS
Test conditions
IC= 100μA , IE=0
IC= 1mA , IB=0
IE= 100μA, IC=0
VCB= 600V , IE=0
VCE= 400V, IB=0
VEB=7V, IC=0
VCE= 20V, IC= 20mA
VCE= 10V, IC= 0.25 mA
IC= 50mA, IB= 10 mA
IC= 50 mA, IB= 10mA
VCE= 20V, IC=20mA
f = 1MHz
IC=50mA, IB1=-IB2=5mA,
VCC=45V
Min
600
400
7
10
5
8
Typ
Max
100
200
100
40
0.5
1.2
0.3
1.5
Unit
V
V
V
μA
μA
μA
V
V
MHz
μs
μs
CLASSIFICATION OF hFE(1)
Range 10-13
13-16
16-19
19-22
22-25
25-28
28-31
31-34
34-37
37-40
B,Mar,2012




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