SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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SiHD7N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
40
5
9
Single
0.6
DPAK
(TO-252)
D
GS
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• Low Figure-of-Merit (FOM) Ron x Qg
• Low Input Capacitance (Ciss)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
DPAK (TO-252)
SiHD7N60E-GE3
SiHD7N60ET1-GE3
SiHD7N60ET5-GE3
SiHD7N60ET4-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Drain-Source Voltage
TC = - 25 °C, ID = 250 μA
VDS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
dV/dt
Soldering Recommendations (Peak Temperature)c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 13.8 mH, Rg = 25 , IAS = 2.5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
575
± 20
30
7
5
18
0.63
43
78
- 55 to + 150
37
3
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S13-1419-Rev. C, 01-Jul-13
1
Document Number: 91510
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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SiHD7N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
1.6
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Relateda
Effective Output Capacitance, Time
Relatedb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.5 A
VDS = 50 V, ID = 3.5 A
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VGS = 10 V ID = 3.5 A, VDS = 480 V
VDD = 480 V, ID = 3.5 A,
VGS = 10 V, Rg = 9.1
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
integral reverse
G
Pulsed Diode Forward Current
ISM p - n junction diode
S
MIN.
609
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.68 - V/°C
- 4V
- ± 100 nA
-1
μA
- 10
0.5 0.6
1.9 -
S
680 -
39 -
5-
pF
34 -
100 -
20 40
5 - nC
9-
13 26
13 26
ns
24 48
14 28
1.1 -
-7
A
- 18
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 3.5 A, VGS = 0 V
- - 1.2 V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 3.5 A,
dI/dt = 100 A/μs, VR = 20 V
- 230 - ns
- 1.9 - μC
- 14 - A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S13-1419-Rev. C, 01-Jul-13
2
Document Number: 91510
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHD7N60E
Vishay Siliconix
20 TOP 15 V
14 V
13 V
12 V
11 V
16 10 V
9V
8V
7V
6V
12 BOTTOM 5 V
TJ = 25 °C
8
4
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
ID = 3.5 A
2.5
2
1.5 VGS = 10 V
1
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
12
TOP 15 V
14 V
13 V
12 V
11 V
9 10 V
9V
8V
7V
6V
BOTTOM 5 V
6
TJ = 150 °C
3
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
10 000
1000
100
10
Coss
Crss
Ciss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1
0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
TJ = 25 °C
16
12
8 TJ = 150 °C
4
24
VDS = 480 V
20
VDS = 300 V
VDS = 120 V
16
12
8
4
0
0 5 10 15 20 25
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
0
0 10 20 30 40
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-1419-Rev. C, 01-Jul-13
3
Document Number: 91510
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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SiHD7N60E
Vishay Siliconix
100 8
10
TJ = 150 °C
TJ = 25 °C
1
VGS = 0 V
0.1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VSD, Source-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
Operation in this Area
Limited by RDS(on)
IDM = Limited
10
1 Limited by RSD *(on)
100 μs
1 ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.01
10 ms
BVDSS Limited
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 8 - Maximum Safe Operating Area
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
750
725
700
675
650
625
600
575
550
525
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Temperature vs. Drain-to-Source Voltage
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
Pulse Time (s)
0.1
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
1
S13-1419-Rev. C, 01-Jul-13
4
Document Number: 91510
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
+- VDD
Fig. 12 - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 13 - Switching Time Waveforms
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 14 - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 15 - Unclamped Inductive Waveforms
SiHD7N60E
Vishay Siliconix
10 V
QGS
VG
QG
QGD
Charge
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 μF
0.3 μF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
S13-1419-Rev. C, 01-Jul-13
5
Document Number: 91510
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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SiHD7N60E
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-+
Rg
dV/dt controlled by Rg
+
Driver same type as D.U.T.
ISD controlled by duty factor “D”
- VDD
D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
VDD
Ripple 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91510.
S13-1419-Rev. C, 01-Jul-13
6
Document Number: 91510
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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Package Information
Vishay Siliconix
TO-252AA Case Outline
E
b3
b b2
e
e1
E1
A
C2
C
A1
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1 - 0.127 - 0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1 4.10
- 0.161 -
E
6.35
6.73
0.250
0.265
E1 4.32
- 0.170 -
H
9.40
10.41
0.370
0.410
e 2.28 BSC
0.090 BSC
e1 4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4 - 1.02 - 0.040
L5 1.01 1.52
ECN: T13-0359-Rev. O, 03-Jun-13
DWG: 5347
0.040
0.060
Notes
• Dimension L3 is for reference only.
• Xi’an, Mingxin, and GEM SH actual photo.
Revision: 03-Jun-13
1 Document Number: 71197
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
Application Note 826
Vishay Siliconix
Return to Index Return to Index
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3


SiHD7N60E-GE3 (Vishay)
E Series Power MOSFET

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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1 Document Number: 91000




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