STS3419 (SamHop Microelectronics)
P-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3419
Ver 2.2
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-3.8A
65 @ VGS=-10V
90 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
Halogen free.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a c
TA=25°C
TA=70°C
IDM -Pulsed c
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-3.8
-3.0
-14
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
May,16,2014
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STS3419 (SamHop Microelectronics)
P-Channel Enhancement Mode Field Effect Transistor

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STS3419
Ver 2.2
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
-30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-1.7A
VGS=-4.5V , ID=-1.4A
VDS=-5V , ID=-1.7A
VDS=-15V,VGS=0V
f=1.0MHz
-1.0
VDD=-15V
ID=-1A
VGS=-10V
RGEN= 6 ohm
VDS=-15V,ID=-1.7A,VGS=-10V
VDS=-15V,ID=-1.7A,VGS=-4.5V
VDS=-15V,ID=-1.7A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS=-1A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
Typ Max Units
-1
±100
V
uA
nA
-1.6 -2.5 V
50 65 m ohm
75 90 m ohm
5.6 S
500 pF
95 pF
74 pF
11
13
18
36
10
5
0.83
2.85
ns
ns
ns
ns
nC
nC
nC
nC
-0.8 -1.2 V
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STS3419 (SamHop Microelectronics)
P-Channel Enhancement Mode Field Effect Transistor

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STS3419
20
VGS = -10V
16
12
8
VGS = -6V
VGS = -4.5V
VGS = -4V
VGS = -3.5V
4 VGS = -3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
180
150
120
VGS = -4.5V
90
60
VGS = -10V
30
1
1 4 8 12 16 20
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 2.2
10
8
6
4
Tj=125 C -55 C
2 25 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
1.5
1.4 VGS = -10V
ID = -1.7A
1.3
1.2
VGS = -4.5V
1.1 ID = -1.4A
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(°C ) Tj(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
VDS = VGS
ID = -250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID = -250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
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STS3419 (SamHop Microelectronics)
P-Channel Enhancement Mode Field Effect Transistor

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STS3419
240
ID = -1.7A
200
160
120
125 C
80
40 75 C 25 C
0
0 2 4 6 8 10
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
720
600
Ciss
480
360
240
Coss
120
Crss
0
0 5 10 15 20 25 30
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 2.2
20.0
10.0
5.0
25 C
125 C
75 C
1.0
0
0.4 0.8 1.2 1.6 2.0
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS = -15V
ID = -1.7A
6
4
2
0
0 3 6 9 12
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
Tf
Tr
TD(on)
TD(off)
VDS = -15V,ID = -1A
VGS = -10V
1
1 10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
4
10
1
R DS(ON) Limit
DC10s1001m0sm1s ms100us
0.1
VGS = -10V
Single Pulse
TA = 25 C
0.03
0.1 1
10 30
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
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STS3419 (SamHop Microelectronics)
P-Channel Enhancement Mode Field Effect Transistor

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STS3419
Ver 2.2
10
1
0.5
0.2
0. 1 0.1
0.05
0.02
0.01 Single Pulse
0.01
0.0000 1
0.000 1
0 .001
0.01
0. 1
1
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
1 00 0
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STS3419 (SamHop Microelectronics)
P-Channel Enhancement Mode Field Effect Transistor

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STS3419
PACKAGE OUTLINE DIMENSIONS
SOT 23
D
3
Ver 2.2
1
e
2
b
e1
DETAIL "A"
DETAIL "A"
L
L1
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
MILLIMETERS
MIN MAX
2.700
3.100
2.200
3.000
1.200
1.700
0.850
1.150
1.800
0.300
2.100
0.510
0.080
0.200
0.000
0.150
0.887
1.300
0.450 REF.
0.600 REF.
0O 10O
INCHES
MIN
0.106
0.087
0.047
MAX
0.122
0.118
0.067
0.033
0.071
0.019
0.003
0.000
0.045
0.083
0.020
0.008
0.006
0.035
0.051
0.018 REF.
0.024 REF.
0O 10O
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STS3419 (SamHop Microelectronics)
P-Channel Enhancement Mode Field Effect Transistor

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STS3419
SOT23-3L Carrier Tape
Ver 2.2
SOT23 Tape and Reel Data
TR
FEED DIRECTION
UNIT:р
PACKAGE A0
SOT23-3L
3.15
²0.10
B0
2.77
²0.10
K0
1.22
²0.10
D0 D1
О1.00 О1.50
+0.05 +0.10
E
8.00
+0.30
-0.10
E1
1.75
²0.10
E2
3.50
²0.05
P0
4.00
²0.10
P1
4.00
²0.10
P2
2.00
²0.05
T
0.22
²0.04
SOT23-3L Reel
UNIT:р
TAPE SIZE
8р
REEL SIZE
О178
M
О178
²1
N
О60
²1
W
9.00
²0.5
W1
12.00
²0.5
H
О13.5
!!²0.5
K
10.5
SG
2.00 О10.0
²0.5
R
5.00
V
18.00
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STS3419 (SamHop Microelectronics)
P-Channel Enhancement Mode Field Effect Transistor

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STS3419
TOP MARKING DEFINITION
SOT-23
Product No.
T19
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Ver 2.2
May,16,2014
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