SP2106 (SamHop Microelectronics)
Dual N-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2106
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
100V
1A
2.0 @ VGS=10V
2.4 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PDFN 5x6
PIN1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1
0.8
4.1
0.25
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,18,2013
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SP2106 (SamHop Microelectronics)
Dual N-Channel Enhancement Mode Field Effect Transistor

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SP2106
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=0.5A
VGS=4.5V , ID=0.5A
VDS=10V , ID=0.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=0.5A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=0.5A,VGS=10V
VDS=50V,ID=0.5A,VGS=4.5V
VDS=50V,ID=0.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=0.5A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Typ
1.8
1.6
1.9
1
64
14
7
7.6
7.2
54
16
2
1.4
0.5
0.7
0.86
Max Units
V
1 uA
±10 uA
3V
2.0 ohm
2.4 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2 V
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SP2106 (SamHop Microelectronics)
Dual N-Channel Enhancement Mode Field Effect Transistor

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SP2106
1.0
VGS=10V
0.8
VGS=4.5V
0.6
VGS=3.5V
0.4
VGS=3V
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
3.6
3.0
2.4
V GS =4.5V
1.8
1.2 V GS =10V
0.6
0.1
0.01
0.2 0.4 0.6 0.8
ID, Drain Current(A)
1.0
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
1.0
0.8
0.6
Tj=125 C
0.4
25 C -55 C
0.2
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0 V G S =10V
I D =0 . 5 A
1.8
1.6
1.4
V G S =4.5V
1.2 ID=0.5A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
V DS =V G S
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=10mA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
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SP2106 (SamHop Microelectronics)
Dual N-Channel Enhancement Mode Field Effect Transistor

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SP2106
4.8
I D =0 . 5 A
4.0
3.2
125 C
2.4
1.6
75 C
25 C
0.8
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
90
75
60
45
30
15
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.1
20
10
125 C
25 C
75 C
1
0 0.7 1.4 2.1 2.8 3.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
6
4
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
10
1 RDS(ON) Limit 100m10s ms 1ms 100us
DC
VDS=50V,ID=0.5A
VGS=10V
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
0.1
0.01
0.1
VGS=10V
Single Pulse
TA=25 C
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
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SP2106 (SamHop Microelectronics)
Dual N-Channel Enhancement Mode Field Effect Transistor

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SP2106
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit
Figure 13a.
Ver 1.1
V(BR)DSS
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.001
0.00001
Single Pulse
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.0001
0.001
0.01 0.1
1
Square Wave Pulse Duration(sec)
10
100
Figure 14. Normalized Thermal Transient Impedance Curve
1000
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SP2106 (SamHop Microelectronics)
Dual N-Channel Enhancement Mode Field Effect Transistor

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SP2106
PACKAGE OUTLINE DIMENSIONS
PDFN 5x6-8L
E1
E
E2
Ver 1.1
D D1
e
L1
TOP VIEW
D2
L2
b
L
BOTTOM VIEW
A
A1 c
SYMBOLS
A
A1
b
c
D
D1
D2
E
E1
E2
e
L
L1
L2
0
SIDE VIEW
MILLIMETERS
MIN NOM MAX
0.85 0.95
1.00
0.00 0.05
0.30 0.40
0.50
0.15 0.20
0.25
5.20 BSC
4.35 BSC
0.50 0.60
0.75
5.55 BSC
6.05 BSC
3.82 BSC
1.27 BSC
0.45 0.55
0.65
0.00 0.15
0.68 REF
0o 10o
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SP2106 (SamHop Microelectronics)
Dual N-Channel Enhancement Mode Field Effect Transistor

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SP2106
TOP MARKING DEFINITION
PDFN 5x6-8L
2106
XXXXXX
Pin 1
SamHop Logo
Product No.
Ver 1.1
SMC internal Code No.(A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
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