AP9466GS (Advanced Power Electronics)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Click to Download PDF File for PC

Advanced Power
Electronics Corp.
AP9466GS
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Fast Switching Characteristics
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
13.5mΩ
40A
G D S TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
40
± 20
40
25
150
36.7
0.29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
3.4
62
Unit
/W
/W
Data and specifications subject to change without notice
200727071-1/4


AP9466GS (Advanced Power Electronics)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Click to Download PDF File for PC

AP9466GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=26A
VGS=4.5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=26A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ±20V
ID=26A
VDS=32V
VGS=4.5V
VDS=20V
ID=26A
RG=3.3Ω,VGS=10V
RD=0.77Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
40 -
-V
- - 13.5 mΩ
- - 21 mΩ
1 - 3V
- 24.5 -
- -1
S
uA
- - 25 uA
- - ±100 nA
- 13.5 22 nC
- 2.6 - nC
- 9.4 - nC
- 7 - ns
- 73 - ns
- 20 - ns
- 8 - ns
- 800 1280 pF
- 170 - pF
- 140 - pF
- 1.3 2 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=26A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 27 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4


AP9466GS (Advanced Power Electronics)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Click to Download PDF File for PC

150
T C =25 o C
120
10V
7.0V
90
5.0V
4.5V
60
30
V G =3.0V
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 1. Typical Output Characteristics
20
I D =26A
T C =25 o C
16
12
8
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
30
25
20
15
T j =150 o C
10
T j =25 o C
5
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
80
T C =150 o C
60
40
AP9466GS
10V
7.0V
5.0V
4.5V
20
V G =3.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.2
I D =26A
V G =10V
1.8
1.4
1.0
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2
1.8
1.6
1.4
1.2
1
0.8
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3/4


AP9466GS (Advanced Power Electronics)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Click to Download PDF File for PC

AP9466GS
14
I D =26A
12
10
V DS =20V
8 V DS =24V
V DS =32V
6
4
2
0
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
10
1 T C =25 o C
Single Pulse
10us
100us
1ms
10ms
100ms
DC
0.1
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
10000
1000
Ciss
Coss
Crss
100
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4


AP9466GS (Advanced Power Electronics)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Click to Download PDF File for PC

ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
D
L2
e
b1
L3
b
L4
SYMBOLS
A
A1
A2
b
b1
c
c1
D
E
e
L2
L3
L4
Millimeters
MIN NOM MAX
4.25 4.75 5.20
0.00 0.15 0.30
2.20 2.45 2.70
0.70 0.90 1.10
1.07 1.27 1.47
0.30 0.45 0.60
1.15 1.30 1.45
8.30 8.90 9.40
9.70 10.10 10.50
2.04 2.54 3.04
----- 1.50 -----
4.50 4.90 5.30
----- 1.50 ----
A
c1
A2
cθ
A1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-263
XX9X46X6XGSS
YWWSSS
Part Number
Package Code
LOGO
meet Rohs requirement
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence




AP9466GS.pdf
Click to Download PDF File