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BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1.5 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = 10 V;
Tamb = 25 °C
RDSon
drain-source on-state VGS = 10 V;
resistance
ID = 320 mA; Tj = 25 °C
Min Typ Max Unit
-
-20
[1] -
-
-
-
60 V
20 V
320 mA
- 1 1.6
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.


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60 V, 320 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1 source TR1
G1 gate TR1
D2 drain TR2
S2 source TR2
G2 gate TR2
D1 drain TR1
Simplified outline
654
Graphic symbol
D1
123
SOT363 (TSSOP6)
G1
S1
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BSS138BKS
TSSOP6
4. Marking
Description
plastic surface-mounted package; 6 leads
Table 4. Marking codes
Type number
BSS138BKS
[1] % = placeholder for manufacturing site code.
Marking code[1]
LG%
D2
G2
S2
017aaa256
Version
SOT363
BSS138BKS
Product data sheet
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Rev. 1 — 12 August 2011
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60 V, 320 mA dual N-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Per device
Ptot total power dissipation
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C
Tamb = 25 °C
HBM
Min Max Unit
-
-20
[1] -
[1] -
-
[2] -
[1] -
-
60 V
20 V
320 mA
210 mA
1.2 A
280 mW
320 mW
990 mW
[2] -
-55
-55
-65
445 mW
150 °C
150 °C
150 °C
[1] -
320 mA
[3] -
1500 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
BSS138BKS
Product data sheet
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BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
120
Pder
(%)
80
001aao121
120
Ider
(%)
80
001aao122
40 40
0
-75 -25 25 75 125 175
Tj (°C)
0
-75 -25 25
75 125 175
Tj (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
10
ID
(A)
1
Fig 2. Normalized continuous drain current as a
function of junction temperature
aaa-000172
10-1
10-2
(1)
(2)
(3)
(4)
(5)
Fig 3.
10-3
10-1
1
10 102
VDS (V)
IDM is a single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
BSS138BKS
Product data sheet
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60 V, 320 mA dual N-channel Trench MOSFET
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
Conditions
in free air
Rth(j-sp)
Per device
Rth(j-a)
thermal resistance from junction to solder point
thermal resistance from junction to ambient
in free air
Min Typ Max Unit
[1] - 390 445 K/W
[2] - 340 390 K/W
- - 130 K/W
[1] - - 300 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
0 0.02
10 0.01
017aaa034
1
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BSS138BKS
Product data sheet
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103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
10
0
0.02
0.01
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
017aaa035
1
103
102
101
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BSS138BKS
Product data sheet
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60 V, 320 mA dual N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
IGSS
RDSon
gfs
drain leakage current
gate leakage current
drain-source on-state
resistance
forward
transconductance
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 320 mA; Tj = 25 °C
VGS = 10 V; ID = 320 mA; Tj = 150 °C
VGS = 4.5 V; ID = 200 mA; Tj = 25 °C
VGS = 2.5 V; ID = 10 mA; Tj = 25 °C
VDS = 10 V; ID = 200 mA; Tj = 25 °C
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 30 V; ID = 300 mA; VGS = 4.5 V;
Tj = 25 °C
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode (per transistor)
VDS = 40 V; RL = 250 ; VGS = 10 V;
RG(ext) = 6 ; Tj = 25 °C
VSD source-drain voltage IS = 300 mA; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
60 - - V
0.48 1.1 1.6 V
- - 1 µA
- - 10 µA
- - 10 µA
- - 10 µA
- - 1 µA
- - 1 µA
- 1 1.6
- 2 3.2
- 1.1 2.2
- 1.4 6.5
- 700 - mS
- 0.6 0.7 nC
- 0.1 - nC
- 0.2 - nC
- 42 56 pF
- 7 - pF
- 4 - pF
- 5 10 ns
- 5 - ns
- 38 76 ns
- 20 - ns
0.7 0.8 1.2 V
BSS138BKS
Product data sheet
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60 V, 320 mA dual N-channel Trench MOSFET
0.4
ID
(A)
10 V
2.5 V
0.3
0.2
aaa-000158
2V
1.75 V
10-3
ID
(A)
10-4
(1) (2)
aaa-000159
(3)
10-5
0.1
1.5 V
VGS = 1.25 V
0
01234
VDS (V)
Tj = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
10-6
0
0.5 1.0 1.5 2.0
VGS (V)
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
6
RDS(on)
(Ω)
4
(1)
(2)
aaa-000160
6
RDS(on)
(Ω)
4
aaa-000161
(3)
2
(4)
2
(5)
(6)
(1)
(2)
0
0 0.1 0.2 0.3 0.4
ID (A)
Tj = 25 °C
(1) VGS = 1.5 V
(2) VGS = 1.75 V
(3) VGS = 2.0 V
(4) VGS = 2.25 V
(5) VGS = 4.5 V
(6) VGS = 10 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0 2 4 6 8 10
VGS (V)
ID = 300 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BSS138BKS
Product data sheet
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60 V, 320 mA dual N-channel Trench MOSFET
0.6
ID
(A)
0.4
aaa-000162
(1) (2)
2
a
1.5
aaa-000163
1
0.2
0.5
(2) (1)
0
0 1.0 2.0 3.0
VGS (V)
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60 0 60 120 180
Tj = (°C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
2
VGS(th)
(V)
1.5
1
aaa-000164
(1)
102 aaa-000165
(1)
C
(pF)
(2)
10 (3)
(2)
0.5
(3)
0
-60 0
60 120 180
Tj (°C)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
1
10-1
1
10 102
VDS (V)
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BSS138BKS
Product data sheet
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60 V, 320 mA dual N-channel Trench MOSFET
10
VGS
(V)
8
aaa-000166
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
QG (nC)
ID = 0.3 A; VDS = 30 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
0.4
IS
(A)
0.3
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 15. Gate charge waveform definitions
aaa-000167
(1) (2)
0.2
0.1
0
0 0.4 0.8 1.2
VSD (V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
BSS138BKS
Product data sheet
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8. Test information
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
P
t2
duty cycle δ =
t1
t2
t1
Fig 17. Duty cycle definition
t
006aaa812
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BSS138BKS
Product data sheet
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9. Package outline
Plastic surface-mounted package; 6 leads
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
SOT363
DB
E AX
y
6
54
pin 1
index
12
e1 bp
e
3
wM B
HE v M A
A
A1
Q
Lp
detail X
c
01
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
c
D
E
e
e1 HE Lp Q
v
w
y
mm
1.1
0.8
0.1
0.30 0.25
0.20 0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45 0.25
0.15 0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
IEC
REFERENCES
JEDEC
JEITA
SC-88
Fig 18. Package outline SOT363 (TSSOP6)
BSS138BKS
Product data sheet
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Rev. 1 — 12 August 2011
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
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10. Soldering
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
2.65
2.35 1.5 0.6 0.5
(4×) (4×)
0.4 (2×)
0.5 0.6
(4×) (2×)
0.6
(4×)
1.8
Fig 19. Reflow soldering footprint for SOT363 (TSSOP6)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot363_fr
1.5
4.5 0.3 2.5
1.5
1.3 1.3
2.45
5.3
Fig 20. Wave soldering footprint for SOT363 (TSSOP6)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
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Product data sheet
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11. Revision history
Table 8. Revision history
Document ID
Release date
BSS138BKS v.1
20110812
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BSS138BKS
Product data sheet
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60 V, 320 mA dual N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status [1] [2]
Objective [short] data sheet
Preliminary [short] data sheet
Product [short] data sheet
Product status [3]
Development
Qualification
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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60 V, 320 mA dual N-channel Trench MOSFET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BSS138BKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
16 of 17


BSS138BKS (NXP Semiconductors)
MOSFET

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NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 11
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 11
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .14
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .15
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .15
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .16
13 Contact information. . . . . . . . . . . . . . . . . . . . . .16
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 August 2011
Document identifier: BSS138BKS




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