BUZ901P (Magna)
N-CHANNEL POWER MOSFET

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MAGNA
TEC
BUZ900P
BUZ901P
MECHANICAL DATA
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
N–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
Pin 1 – Gate
TO–247
Pin 2 – Source
5.25 (0.215)
BSC
Pin 3 – Drain
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905P & BUZ906P
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
VGSS
Gate – Source Voltage
ID Continuous Drain Current
ID(PK)
Body Drain Diode
PD
Total Power Dissipation
@ Tcase = 25°C
Tstg Storage Temperature Range
Tj Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
BUZ900P
160V
BUZ901P
200V
±14V
8A
8A
125W
–55 to 150°C
150°C
1.0°C/W
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94


BUZ901P (Magna)
N-CHANNEL POWER MOSFET

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Click to Download PDF File for PC

MAGNA
TEC
BUZ900P
BUZ901P
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSX
BVGSS
VGS(OFF)
VDS(SAT)*
Drain – Source Breakdown Voltage VGS = –10V
ID = 10mA
Gate – Source Breakdown Voltage VDS = 0
Gate – Source Cut–Off Voltage
VDS = 10V
Drain – Source Saturation Voltage VGD = 0
IDSX
Drain – Source Cut–Off Current
VGS = –10V
BUZ900P
BUZ901P
IG = ±100µA
ID = 100mA
ID =8A
VDS = 160V
BUZ900P
VDS = 200V
BUZ901P
yfs* Forward Transfer Admittance VDS = 10V ID = 3A
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
f = 1MHz
ton Turn–on Time
VDS = 20V
toff Turn-off Time
ID = 5A
* Pulse Test: Pulse Width = 300µs , Duty Cycle 2%.
Min.
160
200
±14
0.15
0.7
Typ.
Max. Unit
V
V
1.5 V
12 V
10
mA
10
2S
Min.
Typ.
500
300
10
100
50
Max. Unit
pF
ns
150
125
100
75
50
25
0
0
Derating Chart
25 50 75 100 125 150
TC — CASE TEMPERATURE (˚C)
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94


BUZ901P (Magna)
N-CHANNEL POWER MOSFET

No Preview Available !

Click to Download PDF File for PC

MAGNA
TEC
Typical Output Characteristics
9
8 6V
7
5V
6
TC = 25˚C
5 4V
4 125W
3 3V
2
2V
1
0
0 10 20 30 40 50 60 70 80 90
VDS — DRAIN – SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area
10
DC OPERATION
TC = 25˚C
1
0.1
BUZ900
BUZ901
BUZ900P
BUZ901P
Typical Output Characteristics
9
8
7 6V
TC = 75˚C
6
5V
5
4 4V 125W
3
2 3V
1 2V
0
0 10 20 30 40 50 60 70 80 90
VDS — DRAIN – SOURCE VOLTAGE (V)
Transconductance
100
V DS = 20V
10
TC = 25˚C
TC = 75˚C
1
0.01
1
10
8
10 100
VDS — DRAIN – SOURCE VOLTAGE (V)
Drain – Source Voltage
vs
Gate – Source Voltage
TC = 25˚C
1000
6
ID = 6A
4
ID = 3A
2
ID = 1A
0
0 2 4 6 8 10 12 14
VGS — GATE – SOURCE VOLTAGE (V)
0.1
012345678
ID — DRAIN CURRENT (A)
Typical Transfer Characteristics
9
8 V DS = 10V
7
6
5
TC = 25˚C
TC = 75˚C
TC = 100˚C
4
3
2
1
0
012345678
VGS — GATE – SOURCE VOLTAGE (V)
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94




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