CPW5-1200-Z050B (Cree)
Silicon Carbide Schottky Diode Chip

No Preview Available !

Click to Download PDF File for PC

CPW5-1200-Z050B
Silicon Carbide Schottky Diode Chip
Z-RecTM Rectifier
Features
Chip Outline
• 1200-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Swtitching
• Positive Temperature Coefficient on VF
VRRM = 1200 V
IF = 50 A
Qc = 170 nC
Part Number
CPW5-1200-Z050B
Die Size
4.9 x 4.9 mm2
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRSM
Surge Peak Reverse Voltage
1200 V
VR DC Peak Blocking Voltage
1300 V
IF Maximum DC Current
50 A TJ=150˚C
TJ , Tstg
Operating Junction and Storage Temperature
-55 to
+175
˚C
TProc
Maximum Procesing Temperature
325
˚C 10 min Maximum
Note
1
Note:
1. Assumes θJC Thermal Resistance < 0.78˚C/W and TC = 25 ˚C
Subject to change without notice.
www.cree.com/power
1
Free Datasheet http://www.nDatasheet.com


CPW5-1200-Z050B (Cree)
Silicon Carbide Schottky Diode Chip

No Preview Available !

Click to Download PDF File for PC

Electrical Characteristics
Symbol
Parameter
VF DC Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
Typ.
1.6
2.3
100
483
170
3380
320
230
Max.
1.8
2.7
515
1920
Unit
V
μA
nC
pF
Test Conditions
IIFF
=
=
50
50
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
VR = 400 V, TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note
Fig 1
Fig 2
Fig 4
Fig 3
Mechanical Parameters
Parameter
Die Size
Anode Pad opening
Thickness
Wafer Size
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
Typ.
4.9 x 4.9
3.8 x 3.8
380 ± 50
100
4
1.8
Polyimide
Unit
mm
mm
μm
mm
μm
μm
2 CPW5-1200-Z050B Rev. -
Free Datasheet http://www.nDatasheet.com


CPW5-1200-Z050B (Cree)
Silicon Carbide Schottky Diode Chip

No Preview Available !

Click to Download PDF File for PC

Typical Performance
100
Conditions:
tp < 50 µs
75
TJ = -55 °C
TJ = 25 °C
TJ = 75 °C
50
TJ = 175 °C
TJ = 125 °C
25
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Foward Voltage, VF (V)
Figure 1. Typical Forward Characteristics
4000
3500
3000
2500
2000
1500
1000
500
0
0.1
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
1 10 100
Reverse Voltage, VR (V)
1000
Figure 3. Typical Capacitance vs. Reverse Voltage
0.001
0.0008
0.0006
0.0004
0.0002
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = -55 °C
0
0 200 400 600 800 1000 1200 1400
Reverse Voltage, VR (V)
Figure 2. Typica Reverse Characteristics
250
Conditions:
TJ = 25 °C
200
150
100
50
0
0 100 200 300 400 500 600 700
Reverse Voltage, VR (V)
Figure 4. Typical Recovery Charge vs.
Reverse Voltage
800
3 CPW5-1200-Z050B Rev. -
Free Datasheet http://www.nDatasheet.com


CPW5-1200-Z050B (Cree)
Silicon Carbide Schottky Diode Chip

No Preview Available !

Click to Download PDF File for PC

Chip Dimensions
B
D
C
A
symbol
A
B
C
D
dimension
mm inch
4.9 0.193
4.9 0.193
3.8 0.150
3.8 0.150
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
4 CPW5-1200-Z050B Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Free Datasheet http://www.nDatasheet.com




CPW5-1200-Z050B.pdf
Click to Download PDF File