AON2800 (Alpha & Omega Semiconductors)
20V Dual N-Channel MOSFET

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AON2800
20V Dual N-Channel MOSFET
General Description
Product Summary
The AON2800 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=2.5V)
ESD Protected
20V
4.5A
< 47m
< 65m
DFN 2x2 Package
S1 G1 D2
Pin 1
D1
Pin 1
Top
D1 G2 S2
Bottom
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±8
4.5
3.8
24
1.5
0.95
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
t 10s
Steady-State
t 10s
Steady-State
Symbol
RθJA
RθJA
Typ
35
65
120
175
Max
45
85
155
235
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Rev 1: August 2011
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AON2800 (Alpha & Omega Semiconductors)
20V Dual N-Channel MOSFET

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AON2800
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=20V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±8V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=4A
VGS=2.5V, ID=3A
Forward Transconductance
VDS=5V, ID=4A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=10V, ID=4A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=4.5V, VDS=10V, RL=2.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
Min
20
0.4
24
285
45
30
1.7
Typ
0.8
37
55
47
14
0.7
360
65
50
3.5
4.15
0.55
1.15
9.5
43
26
39
11
3
Max Units
V
1
µA
5
20 µA
1.2 V
A
47
m
70
65 m
S
1V
1.5 A
435 pF
85 pF
70 pF
5.3
6 nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C.
The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: August 2011
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AON2800 (Alpha & Omega Semiconductors)
20V Dual N-Channel MOSFET

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AON2800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
4.5V
12
9
6
2.5V
3V
3.5V
2V
3
VGS=1.5V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note D)
5
15
VDS=5V
12
9
125°C
6
3
25°C
0
0123
VGS(Volts)
Figure 2: Transfer Characteristics (Note D)
4
70 1.8
60
VGS=2.5V
50
40
30 VGS=4.5V
1.6 VGS=4.5V
ID=4A
1.4 17
5
1.2 2
VGS=2.5V10
1 ID=3A
20
0 2 4 6 8 10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note D)
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction18Temperature
(Note D)
100
ID=4A
90
80
70
125°C
60
50
25°C
40
30
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note D)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note D)
Rev 1: August 2011
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AON2800 (Alpha & Omega Semiconductors)
20V Dual N-Channel MOSFET

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AON2800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
4
VDS=10V
ID=4A
3.5
3
2.5
2
1.5
1
0.5
0
0 1 Q2 g (nC) 3 4
Figure 7: Gate-Charge Characteristics
600
500
400
Ciss
300
200
Coss
100
0 Crss
0 5 10 15
5 VDS (Volts)
Figure 8: Capacitance Characteristics
20
100.0
10.0
1.0
RDS(ON)
limited
0.1 TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
10ms
10s
DC
0.0
0.01
0.1 1
VDS (Volts)
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
10000
1000
TA=25°C
100
10
1
0.00001
0.001
0.1
10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=85°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
100
1000
Rev 1: August 2011
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AON2800 (Alpha & Omega Semiconductors)
20V Dual N-Channel MOSFET

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AON2800
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
R esistive Switching Test Circuit & W aveform s
RL
Vds
DUT
+
Vdd
VDC
-
Vgs
td(on) tr
ton
td(off)
tf
toff
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & W aveform s
Vgs
Q rr = - Idt
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 1: August 2011
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