AON2240 (Alpha & Omega Semiconductors)
40V N-Channel MOSFET

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AON2240
40V N-Channel MOSFET
General Description
Product Summary
The AON2240 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS =10V)
RDS(ON) (at VGS =4.5V)
40V
8A
< 21m
< 29m
Top View
DFN 2x2B
Bottom View
D
D
S
D
S
Pin 1
D
D
G
Pin 1
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=100°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
8
6
32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t 10s
Steady-State
Symbol
RθJA
Typ
37
66
Max
45
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : Dec 2011
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AON2240 (Alpha & Omega Semiconductors)
40V N-Channel MOSFET

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AON2240
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
IDSS Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGSID=250µA
1.4 1.9 2.4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
32
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
16.8
24.5
21
31
m
VGS=4.5V, ID=4A
22.6 29 m
gFS Forward Transconductance
VDS=5V, ID=8A
33 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS Maximum Body-Diode Continuous Current
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
415 pF
112 pF
11 pF
1 2.2 3.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.5 12 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=8A
3 6 nC
1.2 nC
Qgd Gate Drain Charge
1.1 nC
tD(on)
Turn-On DelayTime
4 ns
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=2.5, 3 ns
tD(off)
Turn-Off DelayTime
RGEN=3
15 ns
tf Turn-Off Fall Time
2 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs
12.5 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
3.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
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AON2240 (Alpha & Omega Semiconductors)
40V N-Channel MOSFET

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AON2240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
4.5V
3.5V
20
VDS=5V
15
15 10
10 3V
5
VGS=2.5V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
5 125°C
25°C
0
012345
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
50 1.8
40
30 VGS=4.5V
20
10 VGS=10V
0
0 4 8 12
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.6 VGS=10V
ID=8A
1.4
1.2
1
VGS=4.5V
ID=4A
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
ID=8A
50
40
125°C
30
20
10 25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Dec 2011
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AON2240 (Alpha & Omega Semiconductors)
40V N-Channel MOSFET

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AON2240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=20V
ID=8A
8
6
4
2
600
500
400
300
200
100
Crss
Ciss
Coss
0
0246
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
0 5 10 15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
100.0
10.0
RDS(ON)
limited
1.0
TJ(Max)=150°C
0.1 TC=25°C
10µs
10µs 100µs
1ms
10ms
DC
10000
1000
100
10
TA=25°C
0.0
0.01
0.1 1
VDS (Volts)
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1
0.00001
0.001
0.1
10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01 Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
100 1000
Rev 0: Dec 2011
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AON2240 (Alpha & Omega Semiconductors)
40V N-Channel MOSFET

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AON2240
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
R esistive Switching Test Circuit & W aveform s
RL
Vds
DUT
+
Vdd
VDC
-
Vgs
td(on) tr
ton
td(off)
tf
toff
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & W aveform s
Vgs
Q rr = - Idt
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 0: Dec 2011
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AON2240 (Alpha & Omega Semiconductors)
40V N-Channel MOSFET

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AON2240
Rev 0: Dec 2011
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AON2240.pdf
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