AOI4185 (Alpha & Omega Semiconductors)
P-Channel Enhancement Mode Field Effect Transistor

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AOD4185/AOI4185
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4185/AOI4185 uses advanced trench
technology to provide excellent RDS(ON) and low gate
charge. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current applications.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = -40V
ID = -40A
RDS(ON) < 15m
RDS(ON) < 20m
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
TO252
DPAK
Bottom View
D
D
Top View
D
TO-251A
IPAK
Bottom View
D
D
S
G
G
S
DS
G
G
G
SD
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-40
±20
-40
-31
-115
-42
88
62.5
31
2.5
1.6
-55 to 175
Units
V
V
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case D,F
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


AOI4185 (Alpha & Omega Semiconductors)
P-Channel Enhancement Mode Field Effect Transistor

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AOD4185/AOI4185
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-40V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=-4.5V, ID=-15A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-40
-1.7
-115
-1
-5
±100
-1.9 -3
12.5
19
16
50
-0.72
15
23
20
-1
-20
V
µA
nA
V
A
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2550
280
190
2.5 4
6
pF
pF
pF
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-20V,
ID=-20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-20V, RL=1,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
42
18.6
7
8.6
9.4
20
55
30
38
47
55
49
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
GmF..aTTxhihmeesusemectjeuusrnvtcsetsiaoraneretpeebmrafposeremrdaetoudnrewthoitehf TjtuhJn(eMcAdtXioe)=nv1i-ct7oe5-c°maoCsue.nTtthehedermoSnaOl1Aimicnpu2erFvdRee-np4crobevowiadhredicshwaiitsshimn2goelzea.spCuurolespdepwerarit,thinintgha.esdtiellvaicireemTTnvoBBiurDDonntemdetnot
a large heatsink,
with TA=25°C.
assuming
a
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April, 2012
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


AOI4185 (Alpha & Omega Semiconductors)
P-Channel Enhancement Mode Field Effect Transistor

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AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
0
-10V
-6.0V
-4.5V
-4.0V
`
VGS=-3.5V
1234
-VDS (Volts)
Figure 1: On-Region Characteristics
5
100
VDS=-5V
80
60
40
20
0
1.5
125°C
25°
2 2.5 3 3.5 4 4.5
-VGS(Volts)
Figure 2: Transfer Characteristics
5
24
22
20 VGS=-4.5V
18
16
14 VGS=-10V
12
10
0 10 20 30 40 50 60
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
2
1.8 VGS=-10V
ID=-20A
1.6
1.4 VGS=-4.5V
1.2 ID=-15A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
45
ID=-20A
40
35
30
25 125°C
20
25°C
15
10
3 4 5 6 7 8 9 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
100
150
10
1
mJ
0.1
0.01
0.001
125°C
25°C
0.0001
0.00001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


AOI4185 (Alpha & Omega Semiconductors)
P-Channel Enhancement Mode Field Effect Transistor

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AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=-20V
ID=-20A
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
Qg (nC)
Figure 7: Gate-Charge Characteristics
3500
3000
2500
Ciss
2000
1500
1000
500
Crss
Coss
0
0 5 10 15 20 25 30 35 40
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
RDS(ON)
limited
10
10µs
100µs
1
TJ(Max)=175°C
0.1 TC=25°C
1ms
10ms
DC
0.1 1 10
-VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
10000
1000
TJ(Max)=175°
C
100
10
0.00001 0.0001 0.001 0.01
0.1
1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.4°C/W
1
In descending order
150
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
mJ
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


AOI4185 (Alpha & Omega Semiconductors)
P-Channel Enhancement Mode Field Effect Transistor

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AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note B)
175
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Current De-rating (Note B)
10000
1000
TJ(Max)=150°
C
100
10
1
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
150
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1000
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


AOI4185 (Alpha & Omega Semiconductors)
P-Channel Enhancement Mode Field Effect Transistor

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AOD4185/AOI4185
VDC
Vgs
Ig
Vds
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
Vds
VDC
DUT
Qgs Qgd
Resistive Switching Test Circuit & Waveforms
RL
Vgs
ton
td(on) tr
toff
td(off)
tf
DUT
Vdd
VDC
Vds
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L EAR= 1/2 LIAR
Vgs
DUT
Vds
Vdd
VDC
Id
Vgs
BVDSS
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
-Isd
-Vds
-I F trr
dI/dt
-I RM
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/




AOI4185.pdf
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