AOT15S65 (Freescale)
Power Transistor

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AOT15S65/AOB15S65/AOTF15S65
650V 15A α MOS TM Power Transistor
General Description
The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
750V
60A
0.29
17.2nC
3.6µJ
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT15S65/AOB15S65
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
15
10
TC=25°C
Power Dissipation B Derate above 25oC
PD
208
1.7
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Symbol AOT15S65/AOB15S65
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.6
AOTF15S65
650
±30
15*
10*
60
2.4
86
173
50
0.4
100
20
-55 to 150
300
AOTF15S65
65
--
2.5
AOTF15S65L
15*
10*
34
0.3
AOTF15S65L
65
--
3.7
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
1/7
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AOT15S65 (Freescale)
Power Transistor

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AOT15S65/AOB15S65/AOTF15S65
650V 15A α MOS TM Power Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=150°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=7.5A, TJ=25°C
VGS=10V, ID=7.5A, TJ=150°C
VSD Diode Forward Voltage
IS=7.5A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
650 -
-
700 750
-
- -1
- 10 -
- - ±100
2.6 3.3
4
- 0.254 0.29
- 0.68 0.78
- 0.82 -
- - 15
- - 60
V
µA
nΑ
V
V
A
A
- 841 -
- 58 -
pF
pF
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=7.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=7.5A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=7.5A,dI/dt=100A/µs,VDS=400V
Irm
Peak Reverse Recovery Current
IF=7.5A,dI/dt=100A/µs,VDS=400V
Qrr Body Diode Reverse Recovery Charge IF=7.5A,dI/dt=100A/µs,VDS=400V
- 40 -
- 150 -
- 1.1 -
- 14 -
- 17.2 -
- 4.3 -
- 5.6 -
- 27 -
- 24 -
- 90 -
- 23 -
- 320 -
- 27 -
- 5.5 -
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2.4A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
2/7
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AOT15S65 (Freescale)
Power Transistor

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AOT15S65/AOB15S65/AOTF15S65
650V 15A α MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
10V 7V
20 6V
15
5.5V
10
5V
5
VGS=4.5V
0
0 5 10 15
VDS (Volts)
Figure 1: On-Region Characteristics@25°C
20
20
7V
16 10V 6V
5.5V
12
8 5V
4 VGS=4.5V
0
0 5 10 15 20
VDS (Volts)
Figure 2: On-Region Characteristics@125°C
100
VDS=20V
10
125°C
1
0.1
-55°C
25°C
1.0
0.8
0.6
VGS=10V
0.4
0.2
0.01
2
468
VGS(Volts)
Figure 3: Transfer Characteristics
10
3
2.5 VGS=10V
ID=7.5A
2
1.5
1
0.5
0
-100
-50
0
50 100 150 200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
0.0
0
6 12 18 24 30 36
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.1
1
0.9
0.8
-100
-50
0
50 100 150 200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
3/7
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AOT15S65 (Freescale)
Power Transistor

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AOT15S65/AOB15S65/AOTF15S65
650V 15A α MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
15
1.0E+01
1.0E+00
1.0E-01
125°C
25°C
12
9
1.0E-02
1.0E-03
1.0E-04
6
3
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
0
0
VDS=480V
ID=7.5A
5 10 15 20
Qg (nC)
Figure 8: Gate-Charge Characteristics
25
10000
1000
Ciss
100
10
1
Coss
Crss
0
0 100 200 300 400 500 600
VDS (Volts)
Figure 9: Capacitance Characteristics
7
6
5
4
Eoss
3
2
1
0
0 100 200 300 400 500 600
VDS (Volts)
Figure 10: Coss stored Energy
100
RDS(ON)
10 limited
1 DC
0.1
0.01
TJ(Max)=150°C
TC=25°C
1 10 100
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)15S65 (Note F)
10µs
100µs
1ms
10ms
1000
100
RDS(ON)
limited
10
10µs
100µs
1 1ms
0.1
0.01
TJ(Max)=150°C
TC=25°C
DC
10ms
0.1s
1s
1 10 100 1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe Operating
Area for AOTF15S65(Note F)
4/7
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AOT15S65 (Freescale)
Power Transistor

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AOT15S65/AOB15S65/AOTF15S65
650V 15A α MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
RDS(ON)
10 limited
10µs
100µs
1 1ms
0.1
TJ(Max)=150°C
TC=25°C
DC
10ms
0.1s
1s
0.01
1 10 100 1000
VDS (Volts)
Figure 13: Maximum Forward Biased Safe Operating
Area for AOTF15S65L(Note F)
200
160
120
80
40
0
25
18
15
12
9
6
3
0
0
25 50 75 100 125
TCASE (°C)
Figure 15: Current De-rating (Note B)
150
50 75 100 125 150
TCASE (°C)
Figure 14: Avalanche energy
175
5/7
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AOT15S65 (Freescale)
Power Transistor

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AOT15S65/AOB15S65/AOTF15S65
650V 15A α MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)15S65 (Note F)
10
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF15S65 (Note F)
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=3.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF15S65L (Note F)
100
6/7
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AOT15S65 (Freescale)
Power Transistor

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AOT15S65/AOB15S65/AOTF15S65
650V 15A α MOS TM Power Transistor
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
Vdd
7/7
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