SQJ463EP (Vishay)
Automotive P-Channel MOSFET

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SQJ463EP
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = - 10 V
RDS(on) (Ω) at VGS = - 4.5 V
ID (A)
Configuration
PowerPAK® SO-8L Single
- 40
0.010
0.015
- 30
Single
S
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
5.13 mm
D
4
G
3
S
2
S
1
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
G
D
P-Channel MOSFET
PowerPAK SO-8L
SQJ463EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT
- 40
± 20
- 30
- 30
- 30
- 120
- 44
97
83
28
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
65
°C/W
RthJC
1.8
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2288-Rev. D, 28-Nov-11
1
Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/


SQJ463EP (Vishay)
Automotive P-Channel MOSFET

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SQJ463EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = - 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
VDS = VGS, ID = - 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = - 40 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = - 10 V
VDS = - 40 V, TJ = 125 °C
VDS = - 40 V, TJ = 175 °C
VDS - 5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 4.5 V
VGS = - 10 V
ID = - 18 A
ID = - 15 A
ID = - 18 A; TJ = 125 °C
Forward Transconductanceb
Dynamicb
VGS = - 10 V ID = - 18 A; TJ = 175 °C
gfs VDS = - 15 V, ID = - 18 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = - 20 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = - 10 V VDS = - 20 V, ID = - 18.6 A
f = 1 MHz
VDD = - 20 V, RL = 20 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
Pulsed Currenta
ISM
Forward Voltage
VSD IF = - 4.5 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
- 40
- 1.5
-
-
-
-
- 30
-
-
-
-
-
-
-
-
-
-
-
1.4
-
-
-
-
-
-
TYP.
-
- 2.0
-
-
-
-
-
0.008
0.012
0.013
0.015
45
4700
630
460
98
14
23
2.3
21
17
121
51
-
- 0.8
MAX. UNIT
-
- 2.5
± 100
-1
- 50
- 150
-
0.010
0.015
0.015
0.018
-
V
nA
μA
A
Ω
S
5875
790
575
150
-
-
3.2
32
26
182
77
pF
nC
Ω
ns
- 120
- 1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2288-Rev. D, 28-Nov-11
2
Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/


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Automotive P-Channel MOSFET

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
60
VGS = 10 V thru 5 V
50 VGS = 4 V
40
30
20
10
VGS = 3 V
0
02468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
50
40
30
20
10
0
0
75 0.05
SQJ463EP
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
60 TC = - 55 °C
TC = 25 °C
45
TC = 125 °C
0.04
0.03
30
15
0
0 10 20 30 40 50
ID - Drain Current (A)
Transconductance
7000
6000
5000
4000
Ciss
3000
2000
1000
0
0
Coss
Crss
10 20 30
VDS - Drain-to-Source Voltage (V)
Capacitance
60
40
0.02
0.01
0.00
0
VGS = 4.5 V
VGS = 10 V
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current
60
10
ID = 18.6 A
8
VDS = 20 V
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Qg - Total Gate Charge (nC)
Gate Charge
S11-2288-Rev. D, 28-Nov-11
3
Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SQJ463EP (Vishay)
Automotive P-Channel MOSFET

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.8 100
ID = 18.6 A
1.5
1.2
VGS = 10 V
10
TJ = 150 °C
1
0.1
0.9
0.01
SQJ463EP
Vishay Siliconix
TJ = 25 °C
0.6
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
1.1
0.08
0.06
0.04
0.02
TJ = 150 °C
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
- 42
0.8
ID = 250 µA
0.5
ID = 1 mA
0.2
- 0.1
- 0.4
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
- 44 ID = 1 mA
- 46
- 48
- 50
- 52
- 54
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2288-Rev. D, 28-Nov-11
4
Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/


SQJ463EP (Vishay)
Automotive P-Channel MOSFET

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THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
IDM Limited
100
Limited by RDS(on)*
10 ID Limited
1
SQJ463EP
Vishay Siliconix
100 µs
1 ms
10 ms
100 ms, 1s, 10 s, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2288-Rev. D, 28-Nov-11
5
Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/


SQJ463EP (Vishay)
Automotive P-Channel MOSFET

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THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
SQJ463EP
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65540.
S11-2288-Rev. D, 28-Nov-11
6
Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/


SQJ463EP (Vishay)
Automotive P-Channel MOSFET

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Package Information
Vishay Siliconix
PowerPAK® SO-8L Case Outline
Revision: 27-Aug-12
1 Document Number: 69003
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/


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Automotive P-Channel MOSFET

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DIM.
MIN.
A 1.00
A1 0.00
b 0.33
b1 0.44
b2 4.80
b3
b4
c 0.20
D 5.00
D1 4.80
D2 3.86
D3 1.63
e
E 6.05
E1 4.27
E2 (for Al product)
2.75
E2 (for other product)
3.18
F-
L 0.62
L1 0.92
K
W
W1
W2
W3
ECN: C12-0026-Rev. B, 27-Aug-12
DWG: 5976
Note
• Millimeters will gover
MILLIMETERS
NOM.
1.07
-
0.41
0.51
4.90
0.094
0.47
0.25
5.13
4.90
3.96
1.73
1.27 BSC
6.15
4.37
2.85
3.28
-
0.72
1.07
0.51
0.23
0.41
2.82
2.96
-
MAX.
1.14
0.127
0.48
0.58
5.00
0.30
5.25
5.00
4.06
1.83
6.25
4.47
2.95
3.38
0.15
0.82
1.22
10°
Package Information
Vishay Siliconix
MIN.
0.039
0.00
0.013
0.017
0.189
0.008
0.197
0.189
0.152
0.064
0.238
0.168
0.108
0.125
-
0.024
0.036
INCHES
NOM.
0.042
-
0.016
0.020
0.193
0.004
0.019
0.010
0.202
0.193
0.156
0.068
0.050 BSC
0.242
0.172
0.112
0.129
-
0.028
0.042
0.020
0.009
0.016
0.111
0.117
-
MAX.
0.045
0.005
0.019
0.023
0.197
0.012
0.207
0.197
0.160
0.072
0.246
0.176
0.116
0.133
0.006
0.032
0.048
10°
Revision: 27-Aug-12
2 Document Number: 69003
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/


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Automotive P-Channel MOSFET

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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1 Document Number: 91000
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