2N5457 (ON Semiconductor)
JFETs-General Purpose

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2N5457, 2N5458
JFETs - General Purpose
NChannel Depletion
NChannel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
NChannel for Higher Gain
Drain and Source Interchangeable
High AC Input Impedance
High DC Input Resistance
Low Transfer and Input Capacitance
Low CrossModulation and Intermodulation Distortion
Plastic Encapsulated Package
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
Drain Gate Voltage
Reverse Gate Source Voltage
Gate Current
Total Device Dissipation
Derate above 25°C
@
TA
=
25°C
VDS
VDG
VGSR
IG
PD
25 Vdc
25 Vdc
25 Vdc
10 mAdc
310 mW
2.82 mW/°C
Operating Junction Temperature
TJ 135 °C
Storage Temperature Range
Tstg 65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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1 DRAIN
3
GATE
2 SOURCE
MARKING
DIAGRAM
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
2N
545x
AYWWG
G
TO92
CASE 29
STYLE 5
2N545x = Device Code
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
2N5457
2N5457G
2N5458
TO92
TO92
(PbFree)
TO92
1000 Units/Box
1000 Units/Box
1000 Units/Box
2N5458G
TO92
(PbFree)
1000 Units/Box
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 Rev. 6
1
Publication Order Number:
2N5457/D


2N5457 (ON Semiconductor)
JFETs-General Purpose

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2N5457, 2N5458
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
GateSource Cutoff Voltage
(VDS = 15 Vdc, iD = 10 nAdc)
2N5457
2N5458
GateSource Voltage
(VDS = 15 Vdc, iD = 100 mAdc)
(VDS = 15 Vdc, iD = 200 mAdc)
ON CHARACTERISTICS
2N5457
2N5458
ZeroGateVoltage Drain Current (Note 1)
(VDS = 15 Vdc, VGS = 0)
2N5457
2N5458
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1)
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
2N5457
2N5458
Output Admittance Common Source (Note 1)
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
1. Pulse Width 630 ms, Duty Cycle 10%.
Symbol
V(BR)GSS
IGSS
VGS(off)
VGS
IDSS
|Yfs|
|Yos|
Ciss
Crss
Min Typ Max Unit
25
Vdc
- 1.0
nAdc
− − −200
0.5 − −6.0 Vdc
1.0 − −7.0
− −2.5
− −3.5
Vdc
1.0 3.0 5.0 mAdc
2.0 6.0 9.0
1000
1500
3000
4000
5000
5500
mmhos
10 50 mmhos
4.5 7.0 pF
1.5 3.0 pF
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2N5457 (ON Semiconductor)
JFETs-General Purpose

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2N5457, 2N5458
TYPICAL CHARACTERISTICS
For 2N5457 Only
14
12 VDS = 15 V
VGS = 0
10 f = 1 kHz
8
6
4
2
0
0.001
0.01
0.1
1.0
10
RS, SOURCE RESISTANCE (Megohms)
Figure 1. Noise Figure versus Source Resistance
1.2
VGS(off) ^ -1.2 V
1.0
VGS = 0 V
0.8 - 0.2 V
0.6
- 0.4 V
0.4
- 0.6 V
0.2 - 0.8 V
- 1.0 V
0
0 5 10 15 20 25
VDS, DRAIN - SOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
1.2
VGS(off) ^ -1.2 V
1.0
0.8
VDS = 15 V
0.6
0.4
0.2
0
- 1.2 - 0.8
- 0.4
0
VGS, GATE - SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Transfer Characteristics
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2N5457 (ON Semiconductor)
JFETs-General Purpose

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2N5457, 2N5458
TYPICAL CHARACTERISTICS
For 2N5457 Only
5
4
VGS(off) ^ - 3.5 V
3
VGS = 0 V
- 1 V
2
- 2 V
1
- 3 V
0
0 5 10 15 20 25
VDS, DRAIN - SOURCE VOLTAGE (VOLTS)
Figure 4. Typical Drain Characteristics
5
VGS(off) ^ - 3.5 V
4
3
VDS = 15 V
2
1
0
- 5 - 4 - 3 - 2 - 1
VGS, GATE - SOURCE VOLTAGE (VOLTS)
Figure 5. Common Source Transfer
Characteristics
0
10
VGS = 0 V
8 VGS(off) ^ - 5.8 V
- 1 V
6
- 2 V
4
- 3 V
2
- 4 V
- 5 V
0
0 5 10 15 20
VDS, DRAIN - SOURCE VOLTAGE (VOLTS)
Figure 6. Typical Drain Characteristics
25
10
VGS(off) ^ - 5.8 V
8
6
VDS = 15 V
4
2
0
- 7 - 6 - 5 - 4 - 3 - 2 - 1
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 7. Common Source Transfer
Characteristics
NOTE:
Note: Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under
dc conditions, self heating in higher IDSS units reduces IDSS.
0
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2N5457 (ON Semiconductor)
JFETs-General Purpose

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2N5457, 2N5458
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AM
A
R
SEATING
PLANE
B
P
L
K
XX
H
V
G
C
1
N
N
STRAIGHT LEAD
BULK PACK
D
J
SECTION XX
RAB
P
T
SEATING
PLANE
K
XX
G
V
1
C
N
BENT LEAD
TAPE & REEL
AMMO PACK
D
J
SECTION XX
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.021
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 ---
L 0.250 ---
N 0.080 0.105
P --- 0.100
R 0.115 ---
V 0.135 ---
TYLE 5:
PIN 1.
2.
3.
DRAIN
SOURCE
GATE
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.407 0.533
1.15 1.39
2.42 2.66
0.39 0.50
12.70 ---
6.35 ---
2.04 2.66
--- 2.54
2.93 ---
3.43 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 ---
N 2.04 2.66
P 1.50 4.00
R 2.93 ---
V 3.43 ---
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2N5457/D




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