SI4953ADY (Vishay Siliconix)
Dual P-Channel 30-V (D-S) MOSFET

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Dual P-Channel 30-V (D-S) MOSFET
Si4953ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.053 at VGS = - 10 V
0.090 at VGS = - 4.5 V
ID (A)
- 4.9
- 3.7
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4953ADY-T1-E3 (Lead (Pb)-free)
Si4953ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
G1
S2
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 4.9
- 3.9
- 3.7
- 2.9
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
52
90
32
Maximum
62.5
110
40
Unit
°C/W
Document Number: 71091
S09-0870-Rev. C, 18-May-09
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SI4953ADY (Vishay Siliconix)
Dual P-Channel 30-V (D-S) MOSFET

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Si4953ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 4.9 A
VGS = - 4.5 V, ID = - 3.7 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 4.9 A
Diode Forward Voltagea
VSD IS = - 1.7 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
-1
- 30
Typ.
Max.
± 100
-1
- 25
0.045
0.075
9
- 0.8
0.053
0.090
- 1.2
Unit
V
nA
µA
A
Ω
S
V
15 25
4 nC
2
7 15
10 20
40 80 ns
20 40
30 60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 10 V thru 7 V
24
6V
5V
30
24
18 18
TC = - 55 °C
25 °C
125 °C
12
4V
6
3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage
Output Characteristics
12
6
0
0123456
VGS - Gate-to-Source Voltage
Transfer Characteristics
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Document Number: 71091
S09-0870-Rev. C, 18-May-09


SI4953ADY (Vishay Siliconix)
Dual P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20 1500
Si4953ADY
Vishay Siliconix
0.15
0.10
VGS = 4.5 V
0.05
VGS = 10 V
0
0 6 12 18 24
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 15 V
ID = 4.9 A
8
30
1200
900
Ciss
600
Coss
300
Crss
0
06
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
ID = 4.9 A
1.4
30
6 1.2
4 1.0
2 0.8
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
30
TJ = 150 °C
10
TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.40
0.35
ID = 4.9 A
0.30
0.25
0.20
0.15
0.10
0.05
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71091
S09-0870-Rev. C, 18-May-09
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SI4953ADY (Vishay Siliconix)
Dual P-Channel 30-V (D-S) MOSFET

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Si4953ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8 50
0.6
0.4
0.2
0.0
- 0.2
ID = 250 µA
40
30
20
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
10-3
10-2
10-1
1
10
Time (s)
Single Pulse Power
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10-4
2
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71091.
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Document Number: 71091
S09-0870-Rev. C, 18-May-09


SI4953ADY (Vishay Siliconix)
Dual P-Channel 30-V (D-S) MOSFET

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Disclaimer
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Revision: 08-Feb-17
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Document Number: 91000




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