Inchange Semiconductor
Inchange Semiconductor


BUX31 (Inchange Semiconductor)
Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX31/A/B
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUX31
= 450V (Min)-BUX31A
= 450V (Min)-BUX31B
·Low Saturation Voltage
APPLICATIONS
·Designed for off-line power supplies and are also well suited
for use in a wide range of inverter or converter circuits and
pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter
Voltage(VBE= 0)
BUX31
BUX31A
BUX31B
800
900
1000
V
VCEO
Collector-Emitter
Voltage
BUX31
BUX31A
BUX31B
400
450
500
V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
10 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
5
150
200
-65~200
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/


BUX31 (Inchange Semiconductor)
Silicon NPN Power Transistor

No Preview Available !

Click to Download PDF File for PC

www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX31/A/B
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUX31
BUX31A IC= 0.2A ; IB= 0
BUX31B
400
450 V
500
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 2A
VBE(sat)
ICEV
IEBO
Base-Emitter Saturation Voltage
Collector
Cutoff Current
BUX31
BUX31A
BUX31B
Emitter Cutoff Current
IC= 4A; IB=B 0.8A
VCE= 800V;VBE= -1.5V
VCE= 800V;VBE= -1.5V,TC=125
VCE= 900V;VBE= -1.5V
VCE= 900V;VBE= -1.5V,TC=125
VCE= 1000V;VBE= -1.5V
VCE= 1000V;VBE= -1.5V,TC=125
VEB= 8V; IC= 0
1.0 V
2.0 V
1.3 V
0.1
1.0
0.1
1.0
mA
0.1
1.0
2 mA
hFE DC Current Gain
IC= 4A ; VCE= 3V
8
fT Current-Gain—Bandwidth Product IC= 0.2A ;VCE= 10V
15
MHz
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/




Click to Download PDF File for PC