SBP13007-H2 (SemiWell Semiconductor)
High Voltage Fast-Switching NPN Power Transistor

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SemiWell Semiconductor
SBP13007-H2
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 60ns@5.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 390mV@5.0A/1.0A)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as switching mode power supply.
Symbol
1.Base
2.Collector
3.Emitter
TO-220
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP 5 ms )
Base Current
Base Peak Current ( tP 5 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
www.DataSheet4RUθJ.Acom
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 65 ~ 150
150
Value
1.56
62.5
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
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SBP13007-H2 (SemiWell Semiconductor)
High Voltage Fast-Switching NPN Power Transistor

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SBP13007-H2
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
ICEV
VCEO(sus)
VCE(sat)
Collector Cut-off Current
( VBE = - 1.5V )
Collector-Emitter Sustaining Voltage
( IB = 0 )
Collector-Emitter Saturation Voltage
VCE = 700V
VCE = 700V
IC = 10 mA
IC = 2.0A
IC = 5.0A
IC = 8.0A
IC = 5.0A
VBE(sat) Base-Emitter Saturation Voltage
IC = 2.0A
IC = 5.0A
IC = 5.0A
hFE DC Current Gain
Resistive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
IC = 2.0A
IC = 5.0A
IC = 5.0A
IB1 = 1.0A
TP = 25
VCC = 15V
IB1 = 1.0A
LC = 0.35mH
VCC = 15V
IB1= 1.0A
LC = 0.35mH
TC = 100 °C
IB = 0.4A
IB = 1.0A
IB = 2.0A
IB = 1.0A
TC = 100 °C
IB = 0.4A
IB = 1.0A
IB = 1.0A
TC = 100 °C
VCE = 5V
VCE = 5V
VCC = 125V
IB2 = - 1.0A
IC = 5.0A
IB2 = -2.5A
Vclamp = 300V
IC = 5.0A
IB2 = -2.5A
Vclamp = 300V
TC = 100 °C
Min
-
400
-
-
10
5
-
-
-
Typ Max Units
-
1.0
5.0
mA
--V
0.5
1.0
- 2.5 V
2.5
1.2
-
1.6
1.5
V
40
- 40
1.5 3.0
0.17 0.4
0.8 2.0
0.06 0.12
1.0 3.0
0.07 0.15
Notes :
Pulse Test : Pulse width 300, Duty cycle 2%
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SBP13007-H2 (SemiWell Semiconductor)
High Voltage Fast-Switching NPN Power Transistor

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Fig 1. Static Characteristics
12
10
IB = 2000mA
IB = 1600mA
IB = 1200mA
8 IB = 1000mA
IB = 800mA
6 IB = 600mA
IB = 400mA
4 IB = 200mA
2
IB = 0mA
0
0 1 2 3 4 5 6 7 8 9 10
VCE, Collector-Emitter Voltage [V]
Fig 3. Collector-Emitter Saturation Voltage
10
1
TJ = 125oC
0.1
0.01
0.1
TJ = 25oC
Note :
hFE = 5
1
IC, Collector Current [A]
10
Fig 5. Resistive Load Fall Time
1000
100
www.DataShee10t40U.com 2
TJ = 25 oC
Notes :
VCC = 125V
hFE = 5
IB1 = - IB2
46
IC, Collector Current [A]
8
10
SBP13007-H2
Fig 2. DC Current Gain
45
40
35
30 TJ = 125 oC
25
TJ = 25 oC
20
15
Notes :
10
VCE = 5V
5 VCE = 1V
0
0.01 0.1
1
IC, Collector Current [A]
10
Fig 4. Base-Emitter Saturation Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
TJ = 25oC
TJ = 125oC
Note :
hFE = 5
1
IC, Collector Current [A]
10
Fig 6. Resistive Load Storage Time
10
Notes :
VCC = 125V
hFE = 5
IB1 = - IB2
TJ = 25oC
1
012345678
IC, Collector Current [A]
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SBP13007-H2 (SemiWell Semiconductor)
High Voltage Fast-Switching NPN Power Transistor

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SBP13007-H2
Fig 7. Safe Operation Areas
101 10 µs
100 µs
100
DC
500 µs
10-1
10-2
100
Single Pulse
101 102
VCE, Collector-Emitter Clamp Voltage [V]
1ms
103
Fig 9. Power Derating Curve
125
100
75
50
25
0
0 50 100 150 200
TC, Case Temperature (oC)
Fig 8. Reverse Biased Safe Operation
Areas
10
Notes :
TJ 100 °C
8 IB1 = 2 A
RBB = 0
LC = 0.2mH
6
VBE(off)
-5V
4 -3V
-1.5V
2
0 100 200 300 400 500 600 700 800
VCE, Collector-Emitter Clamp Voltage [V]
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SBP13007-H2 (SemiWell Semiconductor)
High Voltage Fast-Switching NPN Power Transistor

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Inductive Load Switching & RBSOA Test Circuit
SBP13007-H2
IB1
VBE(off)
IC
IB
RBB
LC
f
VCE
D.U.T
VClamp
VCC
Resistive Load Switching Test Circuit
RC
IB1
VBE(off)
IC
IB
RBB
VCE
D.U.T
VCC
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SBP13007-H2 (SemiWell Semiconductor)
High Voltage Fast-Switching NPN Power Transistor

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SBP13007-H2
TO-220 Package Dimension
Dim.
Min.
mm
Typ.
A 9.7
B 6.3
C 9.0
D 12.8
E 1.2
F 1.7
G 2.5
H 3.0
I 1.25
J 2.4
K 5.0
L 2.2
M 1.42
N 0.45
O 0.7
φ 3.6
Max.
10.1
6.7
9.47
13.3
1.4
3.4
1.4
2.7
5.15
2.6
1.62
0.6
0.9
Min.
0.382
0.248
0.354
0.504
0.047
0.118
0.049
0.094
0.197
0.087
0.056
0.018
0.027
Inch
Typ.
0.067
0.098
0.142
Max.
0.398
0.264
0.373
0.524
0.055
0.134
0.055
0.106
0.203
0.102
0.064
0.024
0.035
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E
B
F
C
A HI
C1.0
G
D
L
1
2
3
J
K
N
φ
M
1. Base
2. Collector
3. Emitter
O




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