2001FX (ST Microelectronics)
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ST2001FX
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
NEW SERIES, ENHANCED PERFORMANCE
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
HIGH VOLTAGE CAPABILITY
HIGH SWITCHING SPEED
TIGTHER hfe CONTROL
IMPROVED RUGGEDNESS
APPLICATIONS:
HORIZONTAL DEFLECTION FOR COLOR TVS
OVER 21 INCHES AND 15 INCHES MONITORS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ISOWATT218FX
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current (tp < 5 ms)
IB Base Current
Ptot Total Dissipation at Tc = 25 °C
Vins Insulation Withstand Voltage (RMS) from All Three
Leads to External Heatsink
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
October 2003
Value
1500
600
7
10
20
7
63
2500
–65 to 150
150
Unit
V
V
V
A
A
A
W
V
°C
°C
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ST2001FX
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 2 °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
Tj = 125 °C
IEBO
Emitter Cut-off Current VEB = 7 V
(IC = 0)
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
600
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 5 A
IB = 1.25 A
VBE(sat)* Base-Emitter
Saturation Voltage
IC = 5 A
IB = 1.25 A
hFE* DC Current Gain
IC = 6 A
IC = 6 A
VCE = 1 V
VCE = 5 V
5
INDUCTIVE LOAD
IC = 5 A
ts Storage Time
IBon (END) = 850 mA
tf Fall Time
LBB(off) = 2 µH
* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.
VBB(off) = -2.5 V
fh = 64 KHz
(See Figure 1)
Typ.
4.5
2.6
0.2
Max.
1
2
1
1.5
1.2
9
3
0.4
Unit
mA
mA
mA
V
V
V
µs
µs
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Safe Operating Area
Derating Curve
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ST2001FX
Thermal Impedance
Output Characteristics
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
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ST2001FX
DC Current Gain
DC Current Gain
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Power Losses
Inductive Load Switchin Times
Reverse Biased Safe Operating Area
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Figure 1: Inductive Load Switching Test Circuit
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ST2001FX
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ST2001FX
DIM.
A
C
D
D1
E
F
F2
G
G1
H
L
L2
L3
L4
L5
L6
L7
N
R
DIA
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ISOWATT218FX MECHANICAL DATA
MIN.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
mm.
TYP.
5.45
MAX.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15.00
2.20
4.20
3.80
MIN.
0.209
0.110
0.122
0.071
0.031
0.026
0.071
0.406
0.602
0.386
0.898
1.035
1.701
0.169
0.957
0.575
0.071
0.150
0.134
inch
TYP.
0.215
MAX.
0.224
0.126
0.138
0.087
0.043
0.037
0.087
0.453
0.618
0.402
0.913
1.051
1.748
0.185
0.972
0.591
0.087
0.165
0.150
- Weight : 5.6 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 mm
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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