90N20DPBF (International Rectifier)
IRFP90N20DPBF

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SMPS MOSFET
PD - 95664
IRFP90N20DPbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
RDS(on) max
0.023
ID
94Ao
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
94o
66
380
580
3.8
± 30
6.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
°C/W
Notes  through o are on page 8
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90N20DPBF (International Rectifier)
IRFP90N20DPBF

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IRFP90N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
––– ––– V
0.24 ––– V/°C
––– 0.023
––– 5.0 V
––– 25 µA
––– 250
––– 100
nA
––– -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 56A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
39 ––– –––
Qg Total Gate Charge
––– 180 270
Qgs Gate-to-Source Charge
––– 45 67
Qgd Gate-to-Drain ("Miller") Charge
––– 87 130
td(on)
Turn-On Delay Time
––– 23 –––
tr Rise Time
––– 160 –––
td(off)
Turn-Off Delay Time
––– 43 –––
tf Fall Time
––– 79 –––
Ciss Input Capacitance
––– 6040 –––
Coss
Output Capacitance
––– 1070 –––
Crss Reverse Transfer Capacitance
––– 170 –––
Coss
Output Capacitance
––– 8350 –––
Coss
Output Capacitance
––– 420 –––
Coss eff. Effective Output Capacitance
––– 870 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 56A
ID = 56A
VDS = 160V
VGS = 10V, „
VDD = 100V
ID = 56A
RG = 1.2
VGS = 10V
VGS = 0V
„
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
1010
56
58
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 94o
A
MOSFET symbol
showing the
––– ––– 380
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 56A, VGS = 0V „
––– 230 340 ns TJ = 25°C, IF = 56A
––– 1.9 2.8 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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90N20DPBF (International Rectifier)
IRFP90N20DPBF

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IRFP90N20DPbF
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1 5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
5.0V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
5.0
VDS = 15V
20µs PULSE WIDTH
7.0 9.0 11.0 13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
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3.5
I D = 94A
3.0
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( °C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


90N20DPBF (International Rectifier)
IRFP90N20DPBF

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IRFP90N20DPbF
1000000
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
Ciss
Coss
Crss
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
12
ID = 56A
10
VDS = 160V
VDS = 100V
VDS = 40V
7
5
2
0
0 40 80 120 160 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00 TJ = 175°C
10.00
TJ = 25°C
1.00
0.10
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5
VSD, Source-toDrain Voltage (V)
3.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µsec
10 1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
10msec
100 1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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90N20DPBF (International Rectifier)
IRFP90N20DPBF

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100
LIMITED BY PACKAGE
80
60
40
20
0
25 50 75 100 125 150 175
TC, Case Temperature
( °C)
Fig 9. Maximum Drain Current vs.
Case Temperature
1
IRFP90N20DPbF
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01 0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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90N20DPBF (International Rectifier)
IRFP90N20DPBF

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IRFP90N20DPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
2100
1680
1260
TOP
BOTTOM
ID
23A
40A
56A
840
420
0
25 50 75 100 125
Starting T , JJunction Temperature
150 175
( °C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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90N20DPBF (International Rectifier)
IRFP90N20DPBF

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IRFP90N20DPbF
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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90N20DPBF (International Rectifier)
IRFP90N20DPBF

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IRFP90N20DPbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H AS SEMBLY
LOT CODE 5657
AS SEMBLED ON WW 35, 2000
IN T HE ASS EMB LY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INT ERNAT IONAL
R ECT IF IE R
LOGO
AS SEMBLY
LOT CODE
IRFPE 30
035H
56 57
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 0.64mH
RG = 25, IAS = 56A.
as Coss while VDS is rising from 0 to 80% VDSS
o Calculated continuous current based on maximum allowable
ƒ ISD 56A, di/dt 470A/µs, VDD V(BR)DSS,
junction temperature. Package limitation current is 90A.
TJ 175°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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