ZXMS6005DG (Diodes)
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

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ZXMS6005DG
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFETMOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
200 mΩ
Nominal load current (VIN = 5V) 2 A
Clamping Energy
490 mJ
SOT223 Package
DESCRIPTION
The ZXMS6005DG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6005DG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
D
S
D
IN
FEATURES
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6005DGTA
ZXMS
6005D
7
12 embossed
1,000 units
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
1 of 9
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June 2010
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ZXMS6005DG (Diodes)
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

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FUNCTIONAL BLOCK DIAGRAM
IN
Human
body ESD
protection
Over temperature
protection
Over current
protection
Over Voltage
Protection
dV/dt
limitation
Logic
D
S
APPLICATIONS AND INFORMATION
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
• μC compatible power switch for 12V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate
at low VDS to minimise on state power dissipation. The maximum DC operating current is
therefore determined by the thermal capability of the package/board combination, rather
than by the protection circuitry. This does not compromise the product’s ability to self-
protect at low VDS.
ZXMS6005DG
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ZXMS6005DG (Diodes)
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous Drain-Source Voltage
Drain-Source Voltage for short circuit protection
Continuous Input Voltage
Continuous Input Current
-0.2VVIN6V
VIN<-0.2V or VIN>6V
Operating Temperature Range
Storage Temperature Range
Power Dissipation at TA =25°C (a)
Linear Derating Factor
Power Dissipation at TA =25°C (b)
Linear Derating Factor
Pulsed Drain Current @ VIN=3.3V
Pulsed Drain Current @ VIN=5V
Continuous Source Current (Body Diode) (a)
Pulsed Source Current (Body Diode)
Unclamped single pulse inductive energy, Tj=25°C,
ID=0.5A, VDD=24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
SYMBOL
VDS
VDS(SC)
VIN
IIN
Tj,
Tstg
PD
PD
IDM
IDM
IS
ISM
EAS
VESD
VCDM
LIMIT
60
24
-0.5 ... +6
No limit
IIN │≤2
-40 to +150
-55 to +150
1.3
10.4
3.0
24
5
6
2.5
10
490
4000
1000
UNIT
V
V
V
mA
°C
°C
W
mW/°C
W
mW/°C
A
A
A
A
mJ
V
V
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
Junction to Case (c)
SYMBOL
RθJA
RθJA
RθJC
VALUE
96
42
12
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in
still air conditions.
(c) Thermal resistance from junction to the mounting surfaces of the drain pins.
ZXMS6005DG
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

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RECOMMENDED OPERATING CONDITIONS
The ZXMS6005DG is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol Description
Min Max Units
VIN Input voltage range
0 5.5 V
TA Ambient temperature range
-40 125
°C
VIH High level input voltage for MOSFET to be on
3 5.5 V
VIL Low level input voltage for MOSFET to be off
0 0.7 V
VP Peripheral supply voltage (voltage to which load is referred)
0
24
V
CHARACTERISTICS
10
Limited
Limited by Over-Current Protection
by R
DS(on)
1ms
1
DC
1s
100m
10m
Single Pulse
T =25°C
amb
See Note (a)
100ms
10ms
Limit of s/c protection
1 10
V Drain-Source Voltage (V)
DS
Safe Operating Area
100
90
T =25°C
amb
80 See Note (a)
70
60 D=0.5
50
40
30 D=0.2
20
10
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
3.0
2.5
See Note (b)
2.0
1.5
1.0
0.5 See Note (a)
0.0
0 25 50 75 100 125
Temperature (°C)
Derating Curve
150
100 Single Pulse
T =25°C
amb
See Note (a)
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN TYP MAX UNIT CONDITIONS
Static Characteristics
Drain-Source Clamp Voltage
Off state Drain Current
Off state Drain Current
Input Threshold Voltage
Input Current
Input Current
Input Current while over
temperature active
Static Drain-Source On-State
Resistance
VDS(AZ)
IDSS
IDSS
VIN(th)
IIN
IIN
RDS(on)
60 65 70
1
2
0.7 1
1.5
60 100
120 200
300
170 250
V ID=10mA
µA VDS=12V, VIN=0V
uA VDS=36V, VIN=0V
V VDS=VGS, ID=1mA
μA VIN=+3V
μA VIN=+5V
μA VIN=+5V
mΩ VIN=+3V, ID=1A
Static Drain-Source On-State
Resistance
RDS(on)
150 200
mΩ VIN=+5V, ID=1A
Continuous Drain Current (a)
Continuous Drain Current (a)
Continuous Drain Current (b)
Continuous Drain Current (b)
Current Limit (d)
Current Limit (d)
Dynamic Characteristics
Turn On Delay Time
Rise time
Turn Off Delay Time
Fall Time
ID
ID
ID
ID
ID(LIM)
ID(LIM)
td(on)
tr
td(off)
ff
1.4
1.6
1.9
2.0
2.2 5
3.3 7
6
14
34
19
A VIN=3V; TA=25°C
A VIN=5V; TA=25°C
A VIN=3V; TA=25°C
A VIN=5V; TA=25°C
A VIN=+3V,
A VIN=+5V
μs VDD=12V, ID=1A,
VGS=5V
μs
μs
μs
Notes:
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from the
current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

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PARAMETER
Over-temperature Protection
Thermal Overload Trip
Temperature (e)
Thermal hysteresis (e)
SYMBOL
TJT
MIN
150
TYP MAX
175
10
UNIT CONDITIONS
°C
°C
Note:
(e) Over-temperature protection is designed to prevent device destruction under fault conditions.
Fault conditions are considered as “outside” normal operating range, so this part is not designed
to withstand over-temperature for extended periods..
ZXMS6005DG
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

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TYPICAL CHARACTERISTICS
9
8
5V 4.5V
T = 25°C
A
7 4V
6 3.5V
5 3V
4 2.5V
3
2V
2V
IN
1 1.5V
0
0 1 2 3 4 5 6 7 8 9 10 11 12
V Drain-Source Voltage (V)
DS
Typical Output Characteristic
I = 1A
D
0.4
0.2
T = 150°C
J
T = 25°C
J
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V Input Voltage (V)
IN
On-Resistance vs Input Voltage
0.40
0.35
0.30
0.25
V = 3V
IN
0.20
0.15
0.10
V = 5V
IN
0.05
0.00
-75 -50 -25 0 25 50 75 100 125 150
T Junction Temperature (°C)
J
On-Resistance vs Temperature
120
100
80
60
40
20
0
01234
V Input Voltage (V)
IN
Input Current vs Input Voltage
5
1.4
V =V
1.3 IN DS
I = 1mA
D
1.2
1.1
1.0
0.9
0.8
-75 -50 -25 0 25 50 75 100 125 150
T Junction Temperature (°C)
J
Threshold Voltage vs Temperature
10
T =150°C
J
1
T =25°C
J
0.1
0.01
0.4 0.6 0.8 1.0 1.2
V Source-Drain Voltage (V)
SD
Reverse Diode Characteristic
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

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12
10
8
6
4
2
0
-50
I =1A
D
V
DS
V
IN
0 50 100 150 200 250 300
Time (μs)
Switching Speed
8
V = 5V
IN
V = 15V
DS
R = 0Ω
6D
4
2
0
-2 0 2 4 6 8 10 12
Time (ms)
Typical Short Circuit Protection
12
10
8
6
4
2
0
-50
V
I =1A
D
DS
V
IN
0 50 100 150 200 250 300
Time (μs)
Switching Speed
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or
other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume
any liability arising out of the application or use of this document or any product described herein; neither does Diodes
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes
Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all
damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through
unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers
shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product
names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems
without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use
provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support
devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related
requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices
or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes
Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages
arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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