FRM5N142GW (Eudyna Devices)
InGaAs-APD/Preamp Receiver

No Preview Available !

Click to Download PDF File for PC

InGaAs-APD/Preamp
Receiver
FEATURES
• Small Form Factor Package(GW): 9 pins coplanar
• Integrated Design Optimizes Performance at
Bit Rates up to 10.7Gb/s
• High Gain: 4k(Single-ended), 8k(Differential)
• High Sensitivity: -27dBm (typ.)
• Electrical Differential Output
• Wide Bandwidth: 8.5GHz (typ.)
• Operates in both C and L wavelength bands
• Wide Operating Temperature Range: -5°C to +75°C
FRM5N142GW
APPLICATIONS
This APD with HBT preamplifier is intended to function as an optical receiver
at 1,310nm or 1,530-1,610nm in SONET, SDH, DWDM or other optical fiber
systems operating up to 10.7Gb/s. The typical transimpedance (Zt) value
of 4,000optimizes the total bandwidth for 10Gb/s application. The detector
preamplifier is DC coupled and has an electrical differential output.
DESCRIPTION
The FRM5N142GW incorporates a high bandwidth InGaAs APD photo diode, a GaAs
HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF). The APD is
processed with modern MOVPE techniques resulting in a reliable performance over a wide
range of operating conditions. The lens coupling system and the single mode fiber are
assembled using Nd YAG welding.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
www.DataSheet4U.cPomarameter
Symbol
Ratings
Storage Temperature
Tstg
-40 to +85
Operating Temperature
Top
-5 to +75
Supply Voltage
Vss -6 to 0
PIN Reverse Voltage VR 0 to VB(Note)
PIN Reverse Current
IR(peak)
5
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
Unit
°C
°C
V
V
mA
Edition 1.1
October 2003
1


FRM5N142GW (Eudyna Devices)
InGaAs-APD/Preamp Receiver

No Preview Available !

Click to Download PDF File for PC

FRM5N142GW
InGaAs-APD/Preamp
Receiver
OPTICAL & ELECTRICAL CHARACTERISTICS
(Tc=25°C, λ=1,550nm, Vss=-5.2V, unless otherwise specified)
Parameter
Symbol
APD Responsivity
APD Breakdown Voltage
R13
R15
R16
VB
Temperature
Coefficient of VB
AC Transimpedance
γ
Zt
Test Conditions
λ = 1,310nm, M=1
λ = 1,550nm, M=1
λ = 1,610nm, M=1
ID = 10µA
Note (1)
f = 750MHz, Single-end
Min.
0.70
0.70
-
20.0
0.03
3500
Maximum Output
Voltage Swing
Vclip
Saturated Output Voltage,
Single-ended
250
Bandwidth
BW
-3dB from 750MHz, M=9
Pin=-24dBm
M=3
7.5
7.5
Lower Cut-off Frequency fcl -3dB from 750MHz, Pin=-24dBm
-
Limits
Typ.
0.85
0.90
0.80
25.0
Max.
-
-
-
30.0
0.05 0.07
4000
-
350 450
8.5 -
8.5 -
40 100
Peaking
dpk 130MHz to BW, Pin=-24dBm,M=9 -
1.5 2.0
Group Delay Deviation
1GHz to 6GHz, Pin=-24dBm, M=9
GD
1GHz to 8GHz, Pin=-24dBm, M=9
-
-
Output Return Loss
Minimum Sensitivity
www.DataSheet4U.com
Maximum Overload
130MHz to 6GHz
S22
130MHz to 8GHz
10Gb/s, NRZ, 25°C, Rext=13dB
Pr
PRBS=231-1, 25°C, Rext=10dB
B.E.R.=10-12, 25°C, Rext=8.2dB
VR=Optimum 75°C, Rext=13dB
Po
10Gb/s, NRZ, PRBS=231-1,
B.E.R.=10-12, Rext=13dB, M=3
-
-
-
-
-
-
-4
Optical Return Loss
ORL
λ = 1,550nm
λ = 1,310nm
Power Supply Current
Iss
-
Power Supply Voltage
Vss
Thermistor Resistance
Rth
Thermistor B Constant
B
Note 1: γ=VB/Tc
Note: All the parameters are measured with 50Ω, AC-coupled.
-
-
-
27
27
-
-5.46
9.5
3800
30
60
10
7
-27.0
-26.0
-25.0
-26.0
-2
-
-
80
-5.20
10.0
3900
-
-
-
-
-25.0
-
-
-24.0
-
-
-
130
-4.94
10.5
4000
Unit
A/W
V
V/°C
mV
GHz
kHz
dB
psp-p
dB
dBm
dBm
dB
mA
V
k
K
2


FRM5N142GW (Eudyna Devices)
InGaAs-APD/Preamp Receiver

No Preview Available !

Click to Download PDF File for PC

InGaAs-APD/Preamp
Receiver
Notes
FRM5N142GW
www.DataSheet4U.com
3


FRM5N142GW (Eudyna Devices)
InGaAs-APD/Preamp Receiver

No Preview Available !

Click to Download PDF File for PC

FRM5N142GW
“GW” PACKAGE
4.0 2 - R1.1
1
InGaAs-APD/Preamp
Receiver
UNIT: mm
Lead Detail (x10)
Bending Radius 0.3
(1.0)
0.35 0.25
9
5.5 0.4
6.7
PIN # Symbol
Function
1 VPD PD BIAS (+)
1400 MIN.
2 VPreamp Preamp BIAS
3 GND CASE GROUND
4 OUT OUTPUT (-)
5 GND CASE GROUND
6 OUT OUTPUT (+)
28.0 MAX.
7 GND CASE GROUND
8 - NC
9 Rth THERMISTOR
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
www.DaNtaoSrhreeeyts4UD.rciovme
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0103M200
4




FRM5N142GW.pdf
Click to Download PDF File