2SC2565 (SavantIC)
SILICON POWER TRANSISTOR

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1095
·High transition frequency
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC2565
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25°C)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collectorl power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
160
160
5
15
1.5
150
150
-55~150
UNIT
V
V
V
A
A
W


2SC2565 (SavantIC)
SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2565
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A
VBE Base-emitter on voltage
IC=5A ; VCE=5V
ICBO Collector cut-off current
VCB=160V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
160 V
5V
2.0 V
2.0 V
50 µA
50 µA
55 240
40
80 MHz
200 pF
hFE-1 classifications
ROY
55-110 80-160 120-240
2


2SC2565 (SavantIC)
SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC2565
Fig.2 Outline dimensions
3




2SC2565.pdf
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