FDP150N10 (Fairchild Semiconductor)
N-Channel PowerTrench MOSFET

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July 2008
FDP150N10
N-Channel PowerTrench® MOSFET
100V, 57A, 15m
tm
Features
• RDS(on) = 12m( Typ.) @ VGS = 10V, ID = 49A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
TO-220
FDP Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 3)
S
Ratings
100
±20
57
40
228
132
7.5
110
0.88
-55 to +150
300
Ratings
1.13
0.5
62.5
Units
V
V
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDP150N10 Rev. A
1
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FDP150N10 (Fairchild Semiconductor)
N-Channel PowerTrench MOSFET

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Package Marking and Ordering Information TC = 25oC unless otherwise noted
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Device
Package
Reel Size
Tape Width
FDP150N10
FDP150N10
TO-220
-
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC= 25oC
ID = 250µA, Referenced to 25oC
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TC = 150oC
VGS = ±20V, VDS = 0V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 49A
VDS = 20V, ID = 49A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50V, ID = 49A
VGS = 10V, RGEN = 25
VDS = 80V, ID = 49A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 49A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 49A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, IAS = 49A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 49A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300µs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.1
-
-
-
-
12
156
3580
340
140
47
164
86
83
53
19
15
-
-
-
41
70
Max. Units
-
-
1
500
±100
V
V/oC
µA
nA
4.5 V
15 m
-S
4760
450
210
pF
pF
pF
104 ns
338 ns
182 ns
176 ns
69 nC
- nC
- nC
57 A
228 A
1.3 V
- ns
- nC
FDP150N10 Rev. A
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FDP150N10 (Fairchild Semiconductor)
N-Channel PowerTrench MOSFET

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Typical Performance Characteristics
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Figure 1. On-Region Characteristics
500
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
100 6.5 V
6.0 V
5.5 V
10
2
0.02
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
30
25
20
VGS = 10V
15
VGS = 20V
10
*Note: TC = 25oC
5
0 100 200 300
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4000
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
3000
2000
1000
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
1000
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
100
150oC
10 25oC
-55oC
1
345678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
150oC
100
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 25V
8
VDS = 50V
VDS = 80V
6
4
2
*Note: ID = 49A
0
0 10 20 30 40 50 60
Qg, Total Gate Charge [nC]
FDP150N10 Rev. A
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FDP150N10 (Fairchild Semiconductor)
N-Channel PowerTrench MOSFET

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Typical Performance Characteristics (Continued)
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Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
Figure 8. On-Resistance Variation
vs. Temperature
2.4
2.0
1.10
1.6
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250uA
0.90
-100
-50TJ, Jun0ction T5e0mpera1t0u0re [oC1]50
200
1.2
0.8
0.4
-100
*Notes:
1. VGS = 10V
2. ID = 49A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
500
100 10µs
100µs
1ms
10
10ms
DC
Operation in This Area
is Limited by R DS(on)
1
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100 200
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 1.13oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
1
10
FDP150N10 Rev. A
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N-Channel PowerTrench MOSFET

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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP150N10 Rev. A
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FDP150N10 (Fairchild Semiconductor)
N-Channel PowerTrench MOSFET

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Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e---P--u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
FDP150N10 Rev. A
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FDP150N10 (Fairchild Semiconductor)
N-Channel PowerTrench MOSFET

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Mechanical Dimensions
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TO-220
FDP150N10 Rev. A
Dimensions in Millimeters
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FDP150N10 (Fairchild Semiconductor)
N-Channel PowerTrench MOSFET

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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
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®
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OPTOLOGIC®
OPTOPLANAR®
®
tm
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The Power Franchise®
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tm
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®
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDP150N10 Rev. A
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