2N6314 (SavantIC)
(2N6312 - 2N6314) Silicon Power Transistor

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N6312 2N6313 2N6314
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Low leakage current
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6312
VCBO
Collector-base voltage 2N6313
2N6314
2N6312
VCEO
Collector-emitter voltage 2N6313
2N6314
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-40
-60
-80
-40
-60
-80
-5
-5
-10
-2
75
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
2.32
UNIT
/W


2N6314 (SavantIC)
(2N6312 - 2N6314) Silicon Power Transistor

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N6312 2N6313 2N6314
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6312
2N6313 IC=-0.1A ;IB=0
2N6314
VCEsat-1 Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A
VCEsat-2 Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VCEsat-3 Collector-emitter saturation voltage IC=-5A; IB=-1.25A
VBE Base-emitter on voltage
IC=-1.5A ; VCE=-2V
2N6312 VCE=-30V; IB=0
ICEO Collector cut-off current 2N6313 VCE=-50V; IB=0
2N6314 VCE=-70V; IB=0
2N6312 VCB=-40V; IE=0
ICBO Collector cut-off current 2N6313 VCB=-60V; IE=0
2N6314 VCB=-80V; IE=0
ICEX Collector cut-off current
VCE=Rated VCE; VBE(off)=1.5V
TC=125
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
hFE-2
DC current gain
IC=-1.5A ; VCE=-2V
hFE-3
DC current gain
IC=-3A ; VCE=-2V
hFE-4
DC current gain
IC=-5A ; VCE=-4V
COB Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT Transition frequency
IC=-0.5A;VCE=-10V;f=1.0MHz
MIN TYP. MAX UNIT
-40
-60 V
-80
-0.7 V
-2.0 V
-4.0 V
-1.4 V
-1.0 mA
-50 µA
-0.1
-1.0
mA
-0.5 mA
40
25 100
10
4
300 pF
4 MHz
2


2N6314 (SavantIC)
(2N6312 - 2N6314) Silicon Power Transistor

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N6312 2N6313 2N6314
Fig.2 outline dimensions
3




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