K1342 (Hitachi Semiconductor)
2SK1342

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2SK1342
Silicon N-Channel MOS FET
Application
High speed power switching
www.DataSheet4U.com
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source


K1342 (Hitachi Semiconductor)
2SK1342

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2SK1342
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
www.DataSheet4U2..coVmalue at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
900
±30
8
20
8
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2


K1342 (Hitachi Semiconductor)
2SK1342

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2SK1342
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 900
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
www.DataFSohrweeat4rdU.tcraonmsfer admittance |yfs|
3.5
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max
——
——
±10
— 250
— 3.0
1.2 1.6
5.5
1730
700
310
25
135
185
130
0.9
900 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *1
ID = 4 A, VDS = 20 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0,
diF/dt = 100 A/µs
3


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2SK1342

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2SK1342
Power vs. Temperature Derating
150
100
50
0 50 100
www.DataSheet4U.com Case Temperature TC (°C)
150
Typical Output Characteristics
10
10 V
8
6V
Pulse Test
5V
6
4 4.5 V
2
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
50
20
10
5
2
OpiesralimtioitnedinbtyhiRs aDrSe(aon)
1
0.5
1
100
ms
10
µs
µs
0.2
0.1
0.05
1
Ta = 25°C
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
8
VDS = 20 V
Pulse Test
6
4
75°C
2 TC = 25°C
–25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4


K1342 (Hitachi Semiconductor)
2SK1342

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Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
ID = 10 A
12
8
5A
4
2A
www.DataSheet40U.com 4
8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
5
4
VGS = 10 V
Pulse Test
3 5A
ID = 10 A
2
2A
1
0
–40 0
40 80 120 160
Case Temperature TC (°C)
2SK1342
Static Drain to Source on State
Resistance vs. Drain Current
5
VGS = 10 V
2
1 15 V
0.5
0.2
Pulse Test
0.1
0.05
0.2
0.5 1.0 2
5 10 20
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
10
VDS = 20 V
5 Pulse Test
–25°C
TC = 25°C
2 75°C
1
0.5
0.2
0.1
0.05 0.1 0.2 0.5
12
Drain Current ID (A)
5
5


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2SK1342

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2SK1342
5,000
2,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs,
Ta = 25°C, VGS = 0
Pulse Test
1,000
500
200
100
50
www.DataSheet4U.co0m.1 0.2 0.5 1 2
5
Reverse Drain Current IDR (A)
10
10,000
Typical Capacitance vs.
Drain to Source Voltage
1,000
Ciss
Coss
100 Crss
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1,000
800
600
400
200
0
Dynamic Input Characteristics
VDD = 600 V
400 V
250 V
VDS
VGS
20
16
12
8
600 V
400 V
ID = 8 A
4
VDD = 250 V
0
20 40 60 80 100
Gate Charge Qg (nc)
Switching Characteristics
500
td (off)
200
tf
100 tr
50
td (on)
20
10 VGS = 10 V, VDD =.. 30 V
PW = 5 µs, duty < 1%
5
0.1 0.2 0.5 1 2
Drain Current ID (A)
5
10
6


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Reverse Drain Current vs.
Sourse to Drain Voltage
10
Pulse Test
8
6
4
2 5 V, 10 V
VGS = 0, –5 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
2SK1342
3
D=1
1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03 10S.0h1ot Pulse
0.01
10 µ 100 µ
θch–c (t) = γS (t) · θch–c
θch–c = 1.25°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
Vout Monitor
Vin
10 V
50
D.U.T
RL
V=..D3D0 V
Waveforms
90%
Vin 10%
Vout 10%
td (on)
90%
tr
90%
td (off)
10%
tf
7


K1342 (Hitachi Semiconductor)
2SK1342

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15.6 ± 0.3
φ3.2 ± 0.2
4.8 ± 0.2
1.5
Unit: mm
1.6
1.4 Max
2.0
www.DataSheet4U.com
3.6
1.0 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
2.8
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
Conforms
5.0 g


K1342 (Hitachi Semiconductor)
2SK1342

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Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
www.4D.ataDSehseiegtn4Uy.ocuormapplication so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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