GE20N03 (GTM)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ISSUED DATE :2005/06/28
REVISED DATE :
GE20N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
52m
20A
Description
The GE20N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low
voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
30
20
20
13
58
31
0.25
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4.0
62
Unit
/W
/W
GE20N03
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GE20N03 (GTM)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ISSUED DATE :2005/06/28
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.037
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 3 - S VDS=10V, ID=10A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 100 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 52 m VGS=10V, ID=10A
- 85
VGS=4.5V, ID=8A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 6.1 -
ID=10A
Qgs - 1.4 - nC VDS=24V
Qgd - 4 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 4.9 -
- 29 -
- 14.3 -
- 3.6 -
VDS=15V
ID=20A
ns VGS=10V
RG=3.3
RD=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 290 -
- 160 -
- 45 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
20
58
Unit Test Conditions
V IS=20A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE20N03
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GE20N03 (GTM)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Characteristics Curve
ISSUED DATE :2005/06/28
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GE20N03
Fig 6. Type Power Dissipation
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GE20N03 (GTM)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ISSUED DATE :2005/06/28
REVISED DATE :
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GE20N03
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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GE20N03 (GTM)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ISSUED DATE :2005/06/28
REVISED DATE :
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE20N03
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