SFF9244 (Fairchild Semiconductor)
Advanced Power MOSFET

No Preview Available !

Click to Download PDF File for PC

www.DataSheet4U.com
Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA (Max.) @ VDS = -250V
! Lower RDS(ON) : 0.549 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 ” from case for 5-seconds
SFF9244
BVDSS = -250 V
RDS(on) = 0.8
ID = -6.0 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
-250
-6.0
-4.1
24
+_ 30
450
-6.0
6.0
-4.8
60
0.48
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.08
40
Units
oC/W
Rev. A


SFF9244 (Fairchild Semiconductor)
Advanced Power MOSFET

No Preview Available !

Click to Download PDF File for PC

www.DataSheet4U.com
SFF9244
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
-250 -- -- V
-- -0.22 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.8
-- 4.8 -- S
-- 1205 1565
-- 175 265 pF
-- 65 100
-- 14 40
-- 21 50
ns
-- 47 105
-- 18 45
-- 45 58
-- 8.7 -- nC
-- 23.4 --
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-250V
VDS=-200V,TC=125oC
VGS=-10V,ID=-3.0A
VDS=-40V,ID=-3.0A
O4
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
VDD=-125V,ID=-8.6A,
RG=9.1
See Fig 13
O4 O5
VDS=-200V,VGS=-10V,
ID=-8.6A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -6.0
Integral reverse pn-diode
A
-- -24
in the MOSFET
O4 -- -- -5.0 V TJ=25oC,IS=-6.0A,VGS=0V
-- 210 -- ns TJ=25oC,IF=-8.6A
-- 1.82 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=20mH, IAS=-6.0A, VDD=-50V, RG=27*, Starting TJ =25oC
O <_ <_ <_3 ISD -8.6A, di/dt 450A/µs, VDD BVDSS , Starting TJ =25oC
O <_4 Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O5 Essentially Independent of Operating Temperature


SFF9244 (Fairchild Semiconductor)
Advanced Power MOSFET

No Preview Available !

Click to Download PDF File for PC

www.DataSheet4U.com
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : - 15V
- 10 V
101 - 8.0 V
- 7.0 V
- 6.0 V
- 5.5V
- 5.0 V
Bottom : - 4.5V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
-VDS , Drain-Source Voltage [V]
101
Fig 3. On-Resistance vs. Drain Current
2.0
1.5
VGS = -10 V
1.0
0.5
VGS = -20 V
@ Note : TJ = 25 oC
0.0
0 7 14 21 28
-ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
2500
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
2000 Crss= Cgd
C iss
1500
C oss
1000
C rss
500
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
-VDS , Drain-Source Voltage [V]
SFF9244
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = -40 V
3. 250 µs Pulse Test
10-1
2
468
-VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
0.5
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VSD , Source-Drain Voltage [V]
4.5
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = -50 V
10 VDS = -125 V
VDS = -200 V
5
@ Notes : ID =-8.6 A
0
0 10 20 30 40 50
QG , Total Gate Charge [nC]


SFF9244 (Fairchild Semiconductor)
Advanced Power MOSFET

No Preview Available !

Click to Download PDF File for PC

www.DataSheet4U.com
SFF9244
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
P-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
101
1.0
0.9 @ Notes :
1. VGS = 0 V
2. ID = -250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
150 oC
100
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = -40 V
3. 250 µs Pulse Test
10-1
2
468
-VGS , Gate-Source Voltage [V]
10
102
101
100
10-1
100
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R DS(on)
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
0.1 ms
1 ms
10 ms
DC
101 102
-VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
6
4
2
0
25 50 75 100 125 150
Tc , Case Temperature [oC]
Fig 11. Thermal Response
100 D=0.5
0.2
0.1
10- 1
0.05
0.02
0.01
single pulse
@ Notes :
1.
Z
θ
J
C
(t)=2.08
o C/W
Max.
2. Duty Factor, D=t1 /t2
3.
TJ
M
-TC
=PD
M
*Z
θ
J
C
(t)
P.DM
t1.
t2.
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
100
t1 , Square Wave Pulse Duration [sec]
101


SFF9244 (Fairchild Semiconductor)
Advanced Power MOSFET

No Preview Available !

Click to Download PDF File for PC

www.DataSheet4U.com
P-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
SFF9244
“ Current Regulator ”
50K
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
VDS
-10V
Qgs
-3mA
DUT
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
-10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
DUT
td(on)
t on
tr
Vin 10%
Vout
90%
t off
td(off)
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
RG
LL
ID
DUT
C
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
t p Time
VDD
ID (t)
VDS (t)
-10V
tp
IAS
BVDSS


SFF9244 (Fairchild Semiconductor)
Advanced Power MOSFET

No Preview Available !

Click to Download PDF File for PC

www.DataSheet4U.com
SFF9244
P-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Compliment of DUT
(N-Channel)
• dv/dt controlled by “RG
• IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u--l-s-e--W---i-d-t-h----
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
Vf
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD


SFF9244 (Fairchild Semiconductor)
Advanced Power MOSFET

No Preview Available !

Click to Download PDF File for PC

www.DataSheet4U.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FASTr™
OPTOLOGIC ®
Bottomless™
FRFET™
OPTOPLANAR™
CoolFET™
GlobalOptoisolator™ PACMAN™
CROSSVOLT
GTO™
POP™
DOME™
HiSeC™
Power247™
EcoSPARK™
I2C™
PowerTrench ®
E2CMOSTM
ISOPLANAR™
QFET™
EnSignaTM
LittleFET™
QS™
FACT™
MicroFET™
QT Optoelectronics™
FACT Quiet Series™ MicroPak™
Quiet Series™
FAST ®
MICROWIRE™
SILENT SWITCHER ®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET ®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H7




SFF9244.pdf
Click to Download PDF File