IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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PD - 95780
IRG4BC10SD-SPbF
IRG4BC10SD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak & TO-262 packages
• Lead-Free
C
G
E
n-channel
Standard Speed
CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
D2Pak
IRG4BC10SD-S
TO-262
IRG4BC10SD-L
Max.
600
14
8.0
18
18
4.0
18
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Parameter
Min.
Junction-to-Case - IGBT
–––
Junction-to-Case - Diode
–––
Case-to-Sink, flat, greased surface
–––
Junction-to-Ambient, typical socket mount …
–––
Junction-to-Ambient (PCB Mount, steady state)† –––
Weight
–––
Typ.
–––
–––
0.50
–––
–––
2.0(0.07)
Max.
3.3
7.0
–––
80
40
–––
Units
°C/W
g (oz)
1
08/27/04


IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance„
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Min.
600
3.0
3.65
Typ. Max. Units
—— V
0.64 — V/°C
1.58 1.8
2.05 — V
1.68 —
— 6.0
-9.5 — mV/°C
5.48 — S
— 250 µA
— 1000
1.5 1.8 V
1.4 1.7
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 8.0A
IC = 14.0A
VGE = 15V
See Fig. 2, 5
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC =8.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC =4.0A
See Fig. 13
IC =4.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Details of note  through „ are on the last page
2
— 15 22
IC = 8.0A
— 2.42 3.6 nC VCC = 400V
See Fig. 8
— 6.53 9.8
VGE = 15V
— 76 —
TJ = 25°C
— 32 — ns IC = 8.0A, VCC = 480V
— 815 1200
VGE = 15V, RG = 100
— 720 1080
Energy losses include "tail" and
— 0.31 —
diode reverse recovery.
— 3.28 — mJ See Fig. 9, 10, 18
— 3.60 10.9
— 1.46 2.6 mJ IC = 5.0A
— 70 —
TJ = 150°C, See Fig. 10,11, 18
— 36 —
— 890 —
ns IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100
— 890 —
Energy losses include "tail" and
— 3.83 — mJ diode reverse recovery.
— 7.5 — nH Measured 5mm from package
— 280 —
VGE = 0V
— 30 — pF VCC = 30V
See Fig. 7
— 4.0 —
ƒ = 1.0MHz
— 28 42 ns TJ = 25°C See Fig.
— 38 57
TJ = 125°C 14
IF =4.0A
— 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7
TJ = 125°C 15
VR = 200V
— 40 60 nC TJ = 25°C See Fig.
— 70 105
TJ = 125°C
16 di/dt = 200A/µs
— 280 — A/µs TJ = 25°C See Fig.
— 235 —
TJ = 125°C 17
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IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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10.0
8.0
6.0
4.0
2.0
0.0
0.1
60% of rated
voltage
Ideal diodes
IRG4BC10SD-S/LPbF
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100 100
TJ = 25 °C
10 TJ = 150 °C
VGE = 15V
80µs PULSE WIDTH
1
0.5 1.0 1.5 2.0 2.5 3.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10 TJ = 150 °C
TJ = 25 °C
VCC = 50V
ss PPUULLSSEEWWIDIDTHTH
1
6 8 10 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-S/LPbF
16
12
3.00
VGE = 15V
80 us PULSE WIDTH
2.50
IC = 16 A
8
4
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
2.00
IC = 8 A
1.50
IC = 4 A
1.00
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-S/LPbF
500 VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
400 Coes = Cce + Cgc
Cies
300
Coes
200
100 Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
20 VCC = 400V
I C = 8A
15
10
5
0
0 5 10 15 20
QG, Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.60 VCC = 480V
VGE = 15V
3.55
TJ
IC
= 25 °C
= 8A
3.50
3.45
3.40
3.35
3.30
0
20 40 60 80
RGRG, G, GataeteRReessisistatannccee((Oh)m)
100
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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100 RG =1O0h0m
VGE = 15V
VCC = 480V
10
1
IC = 16A
IC= 8A
IC= 4A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5


IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-S/LPbF
15 RG = 11000
TJ = 150° C
VCC = 480V
12 VGE = 15V
9
6
3
0
0 4 8 12 16 20
I C, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector Current
100
100 VGE = 20V
TJ = 125 oC
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
10 TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Forward Volttaaggee DDrroopp -- VVFMFM(VV) )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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50
IF = 8.0A
45
IF = 4.0A
40
35
30
25
VR = 200V
TJ = 125°C
TJ = 25°C
20
100
di f /dt - (A/µs)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
VR = 200V
TJ = 125°C
TJ = 25°C
160
IF = 8.0A
120 IF = 4.0A
IRG4BC10SD-S/LPbF
14
VR = 200V
TJ = 125°C
12 TJ = 25°C
I F = 8.0A
10
IF = 4.0A
8
6
4
2
0
100 1000
dif /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 8.0A
I F = 4.0A
80
40
0
100 1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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100
100
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
A
1000
7


IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-S/LPbF
Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Vge
VC
90%
10%
90%
td(off)
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
IC 5%10%
t d(on)
tr tf
Eon
Eoff
Ets= (Eon +Eoff )
t=5µs
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
10% +Vg
GATE VOLTAGE D.U.T.
+Vg
10% Ic
Vcc
Vce
90% Ic
td(on)
5% Vce
tr
t1
DUT VOLTAGE
AND CURRENT
Ipk
Ic
t2
Eon = VVcceeieIcdtdt
t1
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
Ic
tx
10% Vcc
Vpk
Irr
trr
trr
Qrr = iIdcddt t
tx
10% Irr
Vcc
DIODE RECOVERY
WAVEFORMS
DIODE REVERSE
RECOVERY ENERGY
t3
t4
Erec = VVddidIcdtdt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-S/LPbF
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
50V
6000µF
100V
L
1000V Vc*
D.U.T.
0 - 480V
RL=
480V
4 X IC @25°C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current
Test Circuit
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IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN T HE AS S E MBLY LINE "L"
Note: "P" in as sembly line
position indicates "L ead-Free"
INT ERNAT IONAL
RECT IFIER
L OGO
AS S EMBLY
LOT CODE
OR
F 530S
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 02
L INE L
10
INT E RNAT IONAL
RE CT IF IER
L OGO
AS SE MBLY
LOT CODE
F 530S
PART NUMBE R
DAT E CODE
P = DE SIGNAT ES LE AD-FREE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEE K 02
A = AS SE MBLY S IT E CODE
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IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRG4BC10SD-S/LPbF
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
AS S EMBLE D ON WW 19, 1997
IN T HE AS S EMB LY LINE "C"
Note: "P" in ass embly line
position indicates "Lead-Free"
INT ERNATIONAL
RECT IF IER
LOGO
AS S EMBLY
LOT CODE
OR
INTE RNAT IONAL
R E CT IF IE R
L OGO
AS S E MBLY
LOT CODE
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PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YE AR 7 = 1997
WEE K 19
A = AS S E MBLY S ITE CODE
11


IRG4BC10SD-SPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
Notes:
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)
ƒ Pulse width 80µs; duty factor 0.1%.
„ Pulse width 5.0µs, single shot.
… This only applies to TO-262 package.
† This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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