60EPU02PbF (International Rectifier)
Ultrafast Soft Recovery Diode

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Bulletin PD-21079 08/05
60EPU02PbF
60APU02PbF
Ultrafast Soft Recovery Diode
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
• Lead-Free ("PbF" suffix)
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
trr = 35ns
IF(AV) = 60Amp
VR = 200V
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Absolute Maximum Ratings
Parameters
VR Cathode to Anode Voltage
IF(AV)
Continuous Forward Current, TC = 127°C
IFSM Single Pulse Forward Current, TC = 25°C
IFRM Maximum Repetitive Forward Current
TJ, TSTG Operating Junction and Storage Temperatures
Square Wave, 20kHz
Max
200
60
800
120
- 55 to 175
Units
V
A
°C
60EPU02PbF
Case Styles
60APU02PbF
BASE
COMMON
CATHODE
2
1
CATHODE
3
ANODE
TO-247AC (Modified)
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BASE
COMMON
CATHODE
2
ANODE
1
ANODE
3
TO-247AC
1


60EPU02PbF (International Rectifier)
Ultrafast Soft Recovery Diode

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VBR, Vr
VF
Parameters
Breakdown Voltage,
Blocking Voltage
Forward Voltage
IR Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
Min Typ Max Units Test Conditions
200 - - V IR = 100µA
- 0.98 1.08 V IF = 60A
- 0.81 0.88 V IF = 60A, TJ = 175°C
- - 50 µA VR = VR Rated
- - 2 mA TJ = 150°C, VR = VR Rated
- 87 - pF VR = 200V
- 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
trr Reverse Recovery Time
IRRM
Peak Recovery Current
Qrr Reverse Recovery Charge
- - 35 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V
- 28 -
- 50 -
-4-
TJ = 25°C
TJ = 125°C
A TJ = 25°C
IF = 60A
VR = 160V
diF /dt = 200A/µs
-8-
TJ = 125°C
- 59 - nC TJ = 25°C
- 220 -
TJ = 125°C
Thermal - Mechanical Characteristics
RthJC
RthCS
Wt
Parameters
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
T Mounting Torque
Marking Device
Mounting Surface, Flat, Smooth and Greased
2
Min Typ Max
Units
0.70 K/W
0.2
5.5 g
0.2 (oz)
1.2 N*m
60EPU02, 60APU02
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60EPU02PbF (International Rectifier)
Ultrafast Soft Recovery Diode

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1000
100
10
T J = 175˚C
T J = 125˚C
T J = 25˚C
60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
1000
100
10
TJ = 175˚C
125˚C
1
25˚C
0.1
0.01
0.001
0
50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
10000
1000
T J = 25˚C
100
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.50
D = 0.20
D = 0.10
D = 0.05
0.1
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
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10
3


60EPU02PbF (International Rectifier)
Ultrafast Soft Recovery Diode

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
180
170
160
150
140 DC
130
120
Square wave (D = 0.50)
80% Rated Vr applied
110
see note (3)
100
0 20 40 60 80 100
Average Forward Current - IF(AV)(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
70
IF = 90A
60 IF = 60A
IF = 30A
50
40
30
20 Vr = 160V
Tj = 125˚C
Tj = 25˚C
10
100
di F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
100
RMS Limit
80
60 D = 0.01
D = 0.02
40
D = 0.05
D = 0.10
D = 0.20
20 D = 0.50
DC
0
0 20 40 60 80 100
Average Forward Current - IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
800
700
600
Vr = 160V
Tj = 125˚C
Tj = 25˚C
IF = 90A
500 IF = 60A
IF = 30A
400
300
200
100
0
100 1000
di F/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. diF /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1= 80% rated VR
4
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60EPU02PbF (International Rectifier)
Ultrafast Soft Recovery Diode

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Reverse Recovery Circuit
VR = 200V
L = 70µH
0.01
D.U.T.
ddiifF/d/dt t
ADJUST G
D
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
IF
0
3
trr
ta
tb
1 ddiifF//ddtt
2
I RRM
4
Qrr
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
Q
rr
=
t
rr
xI
2
RRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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60EPU02PbF (International Rectifier)
Ultrafast Soft Recovery Diode

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Outline Table
15.90 (0.626)
15.30 (0.602)
20.30 (0 .800 )
19.70 (0 .775 )
1
3
60EPU02PbF
3. 65 (0.14 4)
3. 55 (0.13 9) DIA.
5. 30 (0 .20 9)
4.70 ( 0.185)
5. 70 (0 .22 5)
5.30 ( 0.208)
5.50 ( 0.217)
4.50 (0.17 7)
(2 PLCS.)
14. 80 ( 0.583)
14.20 (0 .559 )
1.40 (0.056)
1.00 (0.039)
10. 94 ( 0.430)
10 .86 (0 .427 )
4.30 (0.170)
3.70 (0.145)
2. 20 (0 .08 7)
M AX.
0.80 ( 0.032)
0. 40 (0 .213)
Dimensions in millimeters and inches
60APU02PbF
2.5 ( 0.098)
1.5 ( 0.059)
2.40 (0.09 5)
M AX .
BASE
COMMON
CATHODE
2
1
CATHODE
3
ANODE
BASE
COMMON
CATHODE
2
15.90 (0.626)
15.30 (0.602)
ANODE
1
ANODE
3
20.30 (0.800 )
19.70 (0.775 )
12 3
3.65 (0.144)
3. 55 (0 .13 9) DIA.
5.70 (0.225)
5.30 ( 0.208)
5.50 ( 0.217)
4.50 (0.177)
(2 PLCS.)
5.30 (0.209)
4.70 ( 0.185)
2.5 ( 0.098)
1.5 ( 0.059)
14.80 ( 0.583)
14.20 (0.559 )
1.40 (0.05 6)
1.00 (0.03 9)
10.94 ( 0.430)
10.86 (0.427)
4.30 (0.170)
3.70 (0.145)
2.20 (0.087)
M AX .
0.80 ( 0.032)
0.40 (0.213)
2.40 (0.095)
M AX .
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60EPU02PbF (International Rectifier)
Ultrafast Soft Recovery Diode

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Marking Information
60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
INTERNATIONAL
EXAMPLE: THIS IS A 60EPU02
WITH ASSEMBLY
RECTIFIER
LOGO
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
ASSEMBLY
LOT CODE
60EPU02
P035H
56 57
PART NUMBER
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
LINE H
INTERNATIONAL
EXAMPLE: THIS IS A 60APU02
WITH ASSEMBLY
RECTIFIER
LOGO
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
ASSEMBLY
LOT CODE
60APU02
P035H
56 57
PART NUMBER
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
LINE H
Ordering Information Table
Device Code
60 E P U 02 PbF
12 34 5 6
1 - Current Rating (60 = 60A)
2 - Circuit Configuration:
E = Single Diode
A = Single Diode, 3 pins
3 - Package:
P = TO-247AC (Modified)
4 - Type of Silicon:
U = UltraFast Recovery
5 - Voltage Rating (02 = 200V)
6-
none = Standard Production
PbF = Lead-Free
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60EPU02PbF (International Rectifier)
Ultrafast Soft Recovery Diode

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 08/05
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