SGA-2363Z (Sirenza Microdevices)
Cascadable SiGe HBT MMIC Amplifier

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SGA-2363
Product Description
SGA-2363Z
The SGA-2363 is a high performance SiGe HBT MMIC Amplifier. A
Pb RoHS Compliant
& Green Package
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction in- DC-5000 MHz, Cascadable
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
SiGe HBT MMIC Amplifier
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF choke
are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS Product Features
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony • Now available in Lead Free, RoHS
trioxide nor halogenated fire retardants.
Compliant, & Green Packaging
Gain & Return Loss vs. Freq. @TL=+25°C
24
0
• High Gain : 16.1 dB at 1950 MHz
• Cascadable 50 Ohm
GAIN
18
• Operates From Single Supply
-10 • Low Thermal Resistance Package
12
6
0
0
IRL
ORL
1234
Frequency (GHz)
-20
-30
-40
5
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
850 MHz
15.8 17.5 19.3
dB 1950 MHz
16.1
2400 MHz
15.6
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
8.2
7.2
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
19.4
19.0
Bandwidth Determined by Return Loss (>10dB)
MHz
5000
IRL Input Return Loss
dB 1950 MHz
15.1
ORL Output Return Loss
dB 1950 MHz
25.5
NF Noise Figure
dB 1950 MHz
3.2
VD Device Voltage
V 2.4 2.7 3.0
ID Device Operating Current
mA
17 20 23
RTH, j-l Thermal Resistance (junction to lead) °C/W
255
Test Conditions:
VS = 5 V
RBIAS = 120 Ohms
ID = 20 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100628 Rev D


SGA-2363Z (Sirenza Microdevices)
Cascadable SiGe HBT MMIC Amplifier

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SGA-2363 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
G Small Signal Gain
Unit 100
dB 18.0
FrequFFernreecqqyuu(eeMnnHccyzy)((MMHHzz))
500 850 1950
17.7 17.4 16.1
2400
15.6
3500
14.0
OIP3 Output Third Order Intercept Point dBm
20.5 19.4 19.0 18.8
P1dB Output Power at 1dB Compression dBm
8.2 8.2 7.2 6.8
IRL Input Return Loss
dB 18.2 17.0 16.2 15.1 13.3 11.6
ORL Output Return Loss
dB 15.4
16.4 18.0
25.5 24.6
22.4
S Reverse Isolation
12
NF Noise Figure
Test Conditions: VVSS== 85 VV
RRBBIIAASS== 31920OOhmhms s
dB 20.7
dB
IIDD == 8200 mmAA TTyypp..
TTLL==2255ººCC
21.0 21.2 21.4 21.3 21.0
2.9 2.9 3.2 3.5
OOIIPP33TToonnee SSppaacciinngg == 11 MMHHzz,, PPoouutt ppeerr ttoonnee == 0-5ddBBmm
ZZSS== ZZLL== 5500 OOhhmmss
Noise Figure vs. Frequency
VD= 2.7 V, ID= 20 mA
5
4
3
2
TL=+25ºC
1
0
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
40 mA
5V
+18 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
OIP vs. Frequency
3
VD= 2.7 V, ID= 20 mA
30
25
20
15
TL=+25ºC
10
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
10
8
6
4
2
0
0
P vs. Frequency
1dB
VD= 2.7 V, ID= 20 mA
TL=+25ºC
0.5 1 1.5 2 2.5 3
Frequency (GHz)
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100628 Rev D


SGA-2363Z (Sirenza Microdevices)
Cascadable SiGe HBT MMIC Amplifier

No Preview Available !

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SGA-2363 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance Over Temperature ( Bias: VD= 2.7 V, ID= 20 mA (Typ.) )
24 |S21| vs. Frequency
0 |S11| vs. Frequency
18 -10
12 -20
6
+25°C
T -40°C
L
0 +85°C
012345
Frequency (GHz)
-30
-40
0
+25°C
T -40°C
L
+85°C
1234
Frequency (GHz)
5
-10
-15
-20
-25
-30
0
|S12| vs. Frequency
+25°C
T -40°C
L +85°C
1234
Frequency (GHz)
5
0
-10
-20
-30
-40
0
|S22| vs. Frequency
+25°C
TL -40°C
+85°C
1234
Frequency (GHz)
5
NOTE: Full S-parameter data available at www.sirenza.com
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100628 Rev D


SGA-2363Z (Sirenza Microdevices)
Cascadable SiGe HBT MMIC Amplifier

No Preview Available !

Click to Download PDF File for PC

SGA-2363 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Basic Application Circuit
R
BIAS
VS
1 uF 1000
pF
CD
RF in
1,2
3 SGA-2363 6
C
B
4,5
LC
C
B
RF out
V
S
RBIAS
L
C
1 uF
1000 pF
CD
C
CB B
Application Circuit Element Values
Reference
Designator
500
Frequency (Mhz)
850
1950
2400
3500
CB 220 pF 100 pF 68 pF 56 pF 39 pF
CD 100 pF 68 pF 22 pF 22 pF 15 pF
LC 68 nH 33 nH 22 nH 18 nH 15 nH
Recommended Bias Resistor Values for ID=20mA
RBIAS=( VS-VD ) / ID
Supply Voltage(V ) 5 V 6 V 8 V 10 V
S
RBIAS
120 160 270 360
Note: RBIAS provides DC bias stability over temperature.
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
4, and 5 with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
A23
Part Identification Marking
654
654
A23 A23Z
123
123
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Pin # Function
Description
3
1, 2, 4,
5
RF IN
GND
RF input pin. This pin requires the use of
an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
6 RF OUT/ RF output and bias pin. DC voltage is
BIAS present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Part Number Ordering Information
Part Number
SGA-2363
SGA-2363Z
Reel Size
7"
7"
Devices/Reel
3000
3000
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-100628 Rev D


SGA-2363Z (Sirenza Microdevices)
Cascadable SiGe HBT MMIC Amplifier

No Preview Available !

Click to Download PDF File for PC

SGA-2363 DC-5000 MHz Cascadable MMIC Amplifier
SOT-363 PCB Pad LPareyliomuintary
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters]
A link to the SOT-363 package outline drawing with full dimensions and
tolerances may be found on the product web page at www.sirenza.com.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-100628 Rev D




Click to Download PDF File